Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C
(BPL)
TO-220
Com
lementar
Silicon transistor Intended For A Wide Variet
Of Switchin
& Am
lifier
A
lications
Series And Shunt Re
ulators
Driver And Out
ut Sta
es of HI-FI Am
lifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage VCBO 115 V
Collector -Emitter Voltage VCEO 100 V
Emitter Base Voltage VEBO 5.0 V
Collector Current Continuous IC 2.0 A
Peak ICM 4.0 A
Base Current IB 0.6 A
Collector Power Dissipation @ Ta=25 deg C PD 2.0 W
Derate Above 25 deg C 16 mW/deg C
Collector Power Dissipation @ Tc=25 deg C PD 30 W
Derate Above 25 deg C 240 mW/deg C
Unclamped Inductive Load Energy (1) E32 mj
Junction Temperature Tj 150 deg C
Storage Temperature Range Tstg -65 to +150 deg C
Thermal Resistance
Junction to Ambient Rth(j-a) 62.5 deg C/W
Junction to Case Rth(j-c) 4.17 deg C/W
(1)Lc=20mH, RBE=100 ohms, RE=0.1 ohms , IC=1.8A.
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector Emitter (sus) Voltage VCEO(sus)* IC=30mA, IB=0 100 - - V
Collector Cut off Current ICEO VCE=60V, IB=0 - - 0.3 mA
ICES VCE=100V, VBE=0 - - 0.2 mA
Emitter Cut off Current IEBO VBE=5V,IC=0 - - 1.0 mA
DC Current Gain hFE* IC=0.2A, VCE=4V 40 - -
IC=1A, VCE=4V 15 - -
Collector Emitter Saturation Voltage VCE(Sat)* IC=1A, IB=0.2A - - 0.7 V
Base Emitter on Voltage VBE(on)* IC=1A, VCE=4V - - 1.3 V
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) BD240C
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Dynamic Characteristics
Small Signal Current Gain hfe VCE=10V, IC=0.2A 20 -
f=1kHz
Transition Frequency ft VCE=10V,IC=0.2A, 3.0 - MHz
f=1MHz
*Pulse Condition: Pulse Width =300us, Duty Cycle=2%
IS / IEC QC 700000
IS / IEC QC 750100
IS/ISO 90 02
Lic# QSC/L- 000019.2
Continental Device India Limited Data Sheet Page 1 of 3