CREAT BY ART
- Glass passivated chip junction
- Ideal for automated placement
- Super fast recovery time for high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 150 200 300 400 500 600 V
V
RMS
35 70 105 140 210 280 350 420 V
V
DC
50 100 150 200 300 400 500 600 V
I
F(AV)
A
t
rr
ns
C
J
pF
T
J
°C
T
STG
°C
Document Number: DS_D1410033 Version: K15
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
ES
3H
0.95 1.3 1.7
45 30
°C/W
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
Note 1: Pulse test with PW=300μs, 1% duty cycle
Maximum reverse recovery time (Note 2) 35
Typical junction capacitance (Note 3)
Typical thermal resistance R
θJL
R
θJA
12
47
A
Maximum instantaneous forward voltage (Note 1)
I
F
= 3 A V
F
V
I
R
10 μA
500
Maximum reverse current @ rated V
R
Maximum DC blocking voltage
Maximum average forward rectified current 3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
100
Maximum repetitive peak reverse voltage
Maximum RMS voltage
PARAMETER SYMBOL ES
3A
ES
3B
DO-214AB (SMC)
Polarity: Indicated by cathode band
Weight: 0.21 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
ES
3J Unit
ES
3C
ES
3D
ES
3F
ES
3G
T
J
=25°C
T
J
=100°C
ES3A - ES3J
Taiwan Semiconductor
3A, 50V - 600V Surface Mount Su
er Fast Rectifiers
FEATURES
Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-214AB (SMC)