MJD2955
MJD3055
COMPLEMENTARY POWER TRANSISTORS
■STMicroelectronics PREFERRED
SALESTYPES
■SURFA CE -M OUNT ING TO-252 (DPAK )
POWER PACKAGE IN TAPE & RE EL
(SUFFIX "T4")
■ELECTRICALLY SIMILAR TO MJE2955T
AND MJE3055T
APPLIC A TION S
■GENE RA L PURP OSE SWITC HING AND
AMPLIFIER
DESCRIP TION
The MJD2955 and MJD3055 form
complementary PNP-NPN pairs. They are
manufactured using Epitaxial Base technology for
cost-effective performance.
INTERNAL SCHEMATIC DIAGRAM
February 2002
13
DPAK
TO-252
(S uff ix "T 4 ")
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN MJD3055
PNP MJD2955
VCBO Collector-Base Vo ltage (IE = 0) 70 V
VCEO Collector-Emitter Voltage (IB = 0) 60 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 10 A
IBBase Current 6 A
Ptot Total Dissipation at Tc = 25 oC20W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP type voltage and c urrent val ues are negative.
®
1/6
THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 6.25
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless other wise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEX Collecto r Cut-off
Current (VBE = -1.5 V) VCE = 70 V
VCE = 70 V Tj = 150 oC20
2µA
mA
ICBO Collector Cut-off
Current (IE = 0) VCB = 70 V
VCB = 70 V Tj = 150 oC20
2µA
mA
ICEO Collector Cut-off
Current (IB = 0) VCE = 30 V 50 µA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V 0.5 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 30 mA 60 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 4 A IB = 0.4 A
IC = 10 A IB = 3.3 A 1.1
8V
V
VBE(on)∗Base-Emitter Vo ltage IC = 4 A VCE = 4 V 1.8 V
hFE∗DC Current Gain IC = 4 A VCE = 4 V
IC = 10 A VCE = 4 V 20
5100
fTTransition Frequency IC = 0.5 A VCE = 10 V f = 500 KHz 2 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
Safe Operating Area Derating Curves
M J D2955 / MJD3055
2/6
DC Current Gain (NPN type)
DC Transconductance (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
DC Transconductance (PNP type)
Collector-Emitter Saturation Voltage (PNP type)
M J D2955 / MJD3055
3/6
Base-Em itter Saturation Voltage (NPN type)
Transition Frequency (NPN type)
Base-Em itter Saturation Voltage (PNP type)
Transition Frequency (PNP type)
M J D2955 / MJD3055
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
M J D2955 / MJD3055
5/6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequ ences
of use of such inform ation nor for any in fringe ment o f patents or other rig hts of th ird part ies which may re sult fro m its use . N o li cen se i s
granted by implication or otherwise under any patent or patent rights of STM icroelectronics. Specif ication mentioned in this publication are
subject to change without notice. This publication supersedes and replac es all information previously supplied. S TMicroelectronics products
ar e not aut horized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
Th e ST log o is a trademark of STMicroelectronics
© 200 2 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Isra el - Ital y - Japa n - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
M J D2955 / MJD3055
6/6
