RN1301~RN1306
2014-03-01
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1301, RN1302, RN1303
RN1304, RN1305, RN1306
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors.
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2301 to RN2306
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage
RN1301 to 1306
VCEO 50 V
RN1301 to 1304 10
Emitter-base voltage
RN1305, 1306
VEBO 5
V
Collector current IC 100 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 150 °C
Storage temperature range
RN1301 to 1306
Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC
JEITA SC-70
TOSHIBA 2-2E1A
Weight: 6 mg (typ.)
Unit: mm
Type No. R1 (k)R2 (k)
RN1301 4.7 4.7
RN1302 10 10
RN1303 22 22
RN1304 47 47
RN1305 2.2 47
RN1306 4.7 47
USM
Start of commercial production
1987-09
RN1301~RN1306
2014-03-01
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
ICBO V
CB = 50V, IE = 0 100
Collector cut-off current RN1301 to 1306
ICEO V
CE = 50V, IB = 0 500
nA
RN1301 0.82 1.52
RN1302 0.38 0.71
RN1303 0.17 0.33
RN1304
VEB = 10V, IC = 0
0.082 0.15
RN1305 0.078 0.145
Emitter cut-off current
RN1306
IEBO
VEB = 5V, IC = 0
0.074 0.138
mA
RN1301 30
RN1302 50
RN1303 70
RN1304 80
RN1305 80
DC current gain
RN1306
hFE
VCE = 5V, IC = 10mA
80
Collector-emitter
saturation voltage RN1301 to 1306 VCE (sat) IC = 5mA,
IB = 0.25mA 0.1 0.3 V
RN1301 1.1 2.0
RN1302 1.2 2.4
RN1303 1.3 3.0
RN1304 1.5 5.0
RN1305 0.6 1.1
Input voltage (ON)
RN1306
VI (ON)
VCE = 0.2V, IC = 5mA
0.7 1.3
V
RN1301 to 1304 1.0 1.5
Input voltage (OFF)
RN1305, 1306
VI (OFF)
VCE = 5V, IC = 0.1mA
0.5 0.8
V
Transition frequency RN1301 to 1306 fT VCE = 10V, IC = 5mA 250 MHz
Collector output
capacitance RN1301 to 1306 Cob VCB = 10V, IE = 0,
f = 1MHz 3 6 pF
RN1301 3.29 4.7 6.11
RN1302 7 10 13
RN1303 15.4 22 28.6
RN1304 32.9 47 61.1
RN1305 1.54 2.2 2.86
Input resistor
RN1306
R1
3.29 4.7 6.11
k
RN1301 to 1304 0.9 1.0 1.1
RN1305 0.0421 0.0468 0.0515
Resistor ratio
RN1306
R1/R2
0.09 0.1 0.11
RN1301~RN1306
2014-03-01
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RN1301~RN1306
2014-03-01
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RN1301~RN1306
2014-03-01
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RN1301~RN1306
2014-03-01
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Type Name Marking
RN1301
RN1302
RN1303
RN1304
RN1305
RN1306
RN1301~RN1306
2014-03-01
7
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