BUV46
BUV46A
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
■STMicr o electronics PREF E RRED
SALESTYPES
■NPN TRANSISTORS
■HIGH VOLTAGE CAPABILITY
■MINI MUM LO T- TO-LOT SPRE AD F O R
REL IAB L E OPERATION
■FAST SWITCHING SPEED
APPLICATIONS
■GENERAL PURPOSE SWITCHING
■SWITCH MODE POWER SU PPL IES
■ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHT ING
DESCRIPTION
The devices are silicon Multiepitaxial Mesa NPN
transistors in the Jedec TO-220 plastic package
intended for high voltage, fast switching
applications.
®
INT E R NAL SCH E M ATI C DIAG RA M
January 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BUV46 BUV46A
VCES Collector-Emitter Voltage (VBE = 0) 850 1000 V
VCEX Collector-Emitter Voltage (VBE = -2.5V) 850 1000 V
VCEO Collector-Emitter Voltage (IB = 0) 400 450 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
ICCollector Current 5 A
IBBase Current 3 A
Ptot Total Dissipation at Tc = 25 oC70W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
123
TO-220
1/4