A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 2.0 mA 45 V
BVCEO IC = 20 mA 22 V
BVEBO IE = 2.0 mA 3.5 V
hFE VCE = 5.0 V IC = 200 mA 20 ---
Cob VCB = 28 V f = 1.0 MHz 5.0 pF
Pg
P1db VCE = 15 V IC = 250 mA f = 2.1 GHz 1.5 7.8
1.7
dB
W
NPN SILICON RF POWER TRANSISTOR
LTE21015R
DESCRIPTION:
The LTE21015R is Designed for
Class A Common Emitter Amplifier
Applications to 2.3 GHz.
FEATURES INCLUDE:
• Replacement for Philips LTE21015R
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
IC800 mA
VCB 45 V
PDISS 6.0 W @ TC = 25 OC
TJ-55 OC to +200 OC
TSTG -55 OC to +200 OC
θθJC 15 OC/W
PACKAGE STYLE .250 2L FLG
1 = BASE 2 = COLLECTOR
3 = EMITTER
Inches Millimeters
Dim: Min Max Min Max
A0.790 0.810 20.07 20.57
B0.240 0.260 6.10 6.60
C0.144 0.170 3.66 4.31
D0.115 0.125 2.93 3.17
E0.055 0.065 1.40 1.65
F0.045 0.055 1.15 1.39
H0.115 0.135 2.93 3.42
J0.003 0.006 0.08 0.15
K0.225 0.275 5.72 6.98
N0.220 0.240 5.596.09
Q0.125 0.135 3.18 3.42
U0.552 0.572 14.03 14.52
ORDER CODE: ASI10473
