LTE21015R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LTE21015R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG * Replacement for Philips LTE21015R * Gold Metalization * Emitter Ballasting MAXIMUM RATINGS IC 800 mA VCB 45 V PDISS 6.0 W @ TC = 25 OC TJ -55 OC to +200 OC T STG -55 OC to +200 OC JC 15 OC/W CHARACTERISTICS SYMBOL 1 = BASE 2 = COLLECTOR 3 = EMITTER Dim: A B C D E F H J K N Q U Inches Min 0.790 0.240 0.144 0.115 0.055 0.045 0.115 0.003 0.225 0.220 0.125 0.552 Max 0.810 0.260 0.170 0.125 0.065 0.055 0.135 0.006 0.275 0.240 0.135 0.572 Millimeters Min Max 20.07 20.57 6.10 6.60 3.66 4.31 2.93 3.17 1.40 1.65 1.15 1.39 2.93 3.42 0.08 0.15 5.72 6.98 5.59 6.09 3.18 3.42 14.03 14.52 ORDER CODE: ASI10473 TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 2.0 mA 45 V BV CEO IC = 20 mA 22 V BV EBO IE = 2.0 mA 3.5 V hFE VCE = 5.0 V 20 --- Cob VCB = 28 V Pg P1db VCE = 15 V IC = 200 mA f = 1.0 MHz IC = 250 mA f = 2.1 GHz 1.5 5.0 pF 7.8 dB 1.7 W A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 1/1 Specifications are subject to change without notice.