BPW21R Silicon PN Photodiode Description BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. On the other hand, there is a strictly logarithmic correlation between open circuit voltage and illumination over the same range. The device is equipped with a flat glass window with built in color correction filter, giving an approximation to the spectral response of the human eye. 94 8394 Features D Hermetically sealed TO-5 case D Flat glass window with built-in color correction filter for visible radiation D D D D D D D D D Cathode connected to case Wide viewing angle = 50 Large radiant sensitive area (A=7.5 mm2) Suitable for visible radiation High sensitivity Low dark current High shunt resistance Excellent linearity For photodiode and photovoltaic cell operation Applications Sensor in exposure and color measuring purposes TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 1 (5) BPW21R Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb t Symbol VR PV Tj Tamb Tstg Tsd RthJA x 50 C x5s Value 10 300 125 -55...+125 -55...+125 260 250 Unit V mW C C C C K/W Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance p Dark Resistance Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Temp. Coefficient of Ik Reverse Light Current Sensitivity Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Rise Time Fall Time 2 (5) Test Conditions IF = 50 mA IR = 20 mA, E = 0 VR = 5 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0 VR = 10 mV EA = 1 klx EA = 1 klx EA = 1 klx EA = 1 klx EA = 1 klx, VR = 5 V VR=5V, EA=10-2...105 lx VR=0V, RL=1kW, l=660nm VR=0V, RL=1kW, l=660nm Symbol VF V(BR) Iro CD CD RD Vo TKVo Ik TKlk Ira S lp l0.5 tr tf Min Typ 1.0 Max 1.3 2 1.2 400 38 450 -2 9 -0.05 9 9 50 565 420...675 3.1 3.0 30 10 280 4.5 4.5 Unit V V nA nF pF GW mV mV/K mA %/K mA nA/lx deg nm nm ms ms TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 BPW21R Typical Characteristics (Tamb = 25_C unless otherwise specified) 1400 CD - Diode Capacitance ( pF ) I ro - Reverse Dark Current ( nA ) 104 103 102 VR=5V 101 1200 800 600 400 200 100 0 20 40 60 80 120 100 0.1 Tamb - Ambient Temperature ( C ) 94 8468 1.2 1.1 1.0 0.9 0.8 20 40 60 80 100 VR - Reverse Voltage ( V ) 1.0 0.8 0.6 0.4 0.2 Vl Eye 0 350 120 Tamb - Ambient Temperature ( C ) 94 8738 450 550 Figure 5. Relative Spectral Sensitivity vs. Wavelength 0 S rel - Relative Sensitivity Ik - Short Circuit Current ( m A ) 102 101 100 10-1 10-2 750 650 l - Wavelength ( nm ) 94 8477 Figure 2. Relative Reverse Light Current vs. Ambient Temperature 100 10 Figure 4. Diode Capacitance vs. Reverse Voltage S ( l ) rel - Relative Spectral Sensitivity 1.3 0 1 94 8473 Figure 1. Reverse Dark Current vs. Ambient Temperature I ra rel - Relative Reverse Light Current E=0 f=1MHz 1000 10-3 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 10-4 10-2 94 8476 10-1 100 101 102 103 104 EA - Illuminance ( lx ) Figure 3. Short Circuit Current vs. Illuminance TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8475 Figure 6. Relative Radiant Sensitivity vs. Angular Displacment 3 (5) BPW21R Dimensions in mm 96 12181 4 (5) TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 BPW21R Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 5 (5)