A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) High power added efficiency : add = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) High ESD tolerance : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge) Suitable for VHF to UHF-BAND Class-AB power amplifier. ED * * * * * APPLICATIONS IN U * 150 MHz Band Radio System * 460 MHz Band Radio System * 900 MHz Band Radio System ORDERING INFORMATION Part Number NE5550979A Order Number NE5550979A-A NE5550979A-T1 NE5550979A-T1-A Package 79A (Pb Free) Marking W6 Supplying Form * 12 mm wide embossed taping * Gate pin faces the perforation side of the tape * * * * * * SC O NT 12 mm wide embossed taping Gate pin faces the perforation side of the tape Qty 1 kpcs/reel NE5550979A-T1A NE5550979A-T1A-A 12 mm wide embossed taping Gate pin faces the perforation side of the tape Qty 5 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE5550979A-A ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Note Channel Temperature Storage Temperature Ratings 30 6.0 3.0 25 150 -55 to +150 Unit V V A W C C Value at TC = 25C DI Note: Symbol VDS VGS IDS Ptot Tch Tstg CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Page 1 of 11 A Business Partner of Renesas Electronics Corporation. NE5550979A RECOMMENDED OPERATING RANGE (TA = 25C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions MIN. - 1.65 - - f = 460 MHz, VDS = 7.5 V TYP. 7.5 2.20 1.7 25 MAX. 9.0 2.85 - 30 Unit V V A dBm Symbol Vth BVDSS Gm Rth Pout IDS d add GL Note 1 Pout IDS MIN. TYP. MAX. Unit - - - - 100 10 nA A VDS = 7.5 V, IDS = 1.0 mA IDS = 10 A VDS = 7.5 V, IDS = 700100 mA Channel to Case 1.15 25 1.8 - 1.65 37 2.2 5.0 2.25 - 2.9 - V V S C/W f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 200 mA (RF OFF) 38.5 - - - - - - - - - - - - - - 39.5 1.70 68 66 22.0 39.6 1.60 75 73 25.0 38.6 1.76 55 52 16.0 - - - - - - - - - - - - - - - dBm A % % dB dBm A % % dB dBm A % % dB VGS = 6.0 V VDS = 25 V IN U IGSS IDSS Test Conditions f = 157 MHz, VDS = 7.5 V, Pin = 23 dBm, IDset = 200 mA (RF OFF) NT Parameter DC Characteristics Gate to Source Leakage Current Drain to Source Leakage Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage Drain to Source Breakdown Voltage Transconductance Thermal Resistance RF Characteristics Output Power Drain Current Power Drain Efficiency Power Added Efficiency Linear Gain Output Power Drain Current Power Drain Efficiency Power Added Efficiency Linear Gain Output Power Drain Current Power Drain Efficiency Power Added Efficiency Linear Gain d add GL Note 2 Pout IDS f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 200 mA (RF OFF) SC O d add GL Note 1 ED ELECTRICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) Note 1 : Pin = 10 dBm Note 2 : Pin = 5 dBm DI Remark DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Page 2 of 11 A Business Partner of Renesas Electronics Corporation. NE5550979A TEST CIRCUIT SCHEMATIC FOR 460 MHz VGS VDS R1 C1 L1 C1 50 OUT ED IN C10 C22 C11 C12 C20 FET NE5550979A (WS) 50 C21 Symbol C1 C10 C11 Value 1F 100 pF 24 pF Type GRM31CR72A105KA01B GRM1882C1H101JA01 ATC100A240JW C12 2.4 pF ATC100A2R4BW American Technical Ceramics C20 27 pF ATC100A270JW American Technical Ceramics C21 1.8 pF C22 100 pF R1 4.7 k L1 PCB SMA Connecter 123 nH - - Maker Murata Murata NT American Technical Ceramics ATC100A1R8BW American Technical Ceramics ATC100A101JW American Technical Ceramics SSM SC O 1/10 W Chip Resistor SSM_RG1608PB472 0.5 mm, D = 3 mm, 10 Turns R1766, t = 0.4 mm, r = 4.5, size = 30 x 48 mm WAKA 01K0790-20 Ohesangyou Panasonic WAKA COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz V GS GND V DS C1 DI IN U COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 C1 L1 C12 C20 C21 R1 C11 C22 C10 Page 3 of 11 A Business Partner of Renesas Electronics Corporation. NE5550979A TYPICAL CHARACTERISTICS 1 (TA = 25C) R: f = 460MHz, VDS = 3.6/4.5/6/7.5/8.4/9 V, IDset = 200 mA, Pin = 0 to 32 dBm IM: f1 = 460MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/8.4/9 V, IDset = 200mA, Pout (2 tone) = 12 to 38 dBm POWER GAIN, POWER ADDED EFFICIENCY vs. INPUT POWER 4.0 30 3.5 3.0 25 2.5 20 2.0 15 1.5 10 1.0 5 0.5 25 0 5 10 15 20 25 30 0.0 35 15 30 10 20 5 10 0 5 -30 DI -40 -50 -60 -70 10 15 20 25 30 35 40 45 Output Power Pout (dBm) 3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc) 2f0 - 3.6 V 2f0 - 4.5 V 2f0 - 6.0 V 2f0 - 7.5 V 3f0 - 3.6 V 3f0 - 4.5 V 3f0 - 6.0 V 3f0 - 7.5 V 2f0 - 9 V 3f0 - 9 V 10 15 20 25 30 0 35 Input Power Pin (dBm) IM3/IM5 vs. 2 TONES OUTPUT POWER 0 SC O 2nd Harmonics 2f0 (dBc) 3rd Harmonics 3f0 (dBc) -20 50 40 0 -5 2f0, 3f0 vs. OUTPUT POWER -10 60 20 Input Power Pin (dBm) 0 70 IN U 30 0 -5 35 NT Output Power Pout (dBm) 35 4.5 80 Gp - 3.6 V Gp - 4.5 V Gp - 6 V Gp - 7.5 V Gp - 9 V add - 3.6 V add - 4.5 V add - 6.0 V add - 7.5 V add - 9 V Power Added Efficiency add (%) 40 40 Power Gain GP (dB) 45 5.0 Pout - 3.6 V Pout - 4.5 V Pout - 6.0 V Pout - 7.5 V Pout - 9 V IDS - 3.6 V IDS - 4.5 V IDS - 6.0 V IDS - 7.5 V IDS - 9 V Drain Current IDS (A) 50 ED OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER -10 -20 IM3 - 3.6 V IM3 - 4.5 V IM3 - 6 V IM3 - 7.5 V IM5 - 3.6 V IM5 - 4.5 V IM5 - 6.0 V IM5 - 7.5 V IM3 - 9 V IM5 - 9 V -30 -40 -50 -60 -70 10 15 20 25 30 35 40 2 Tones Output Power Pout (2 tone) (dBm) Remark The graphs indicate nominal characteristics. R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Page 4 of 11 A Business Partner of Renesas Electronics Corporation. NE5550979A TEST CIRCUIT SCHEMATIC FOR 157 MHz VGS VDS R1 C1 L1 C1 IN C10 L11 C11 C12 FET NE5550979A C20 50 C21 C22 C23 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Value 1F 100 pF 4.7 pF Type GRM31CR72A105KA01B GRM1882C1H101JA01 ATC100A4R7CT C12 39 pF ATC100A390JT C20 2.0 pF ATC100A2R0CT American Technical Ceramics C21 22 pF ATC100A220JT American Technical Ceramics C22 68 pF C23 12 pF C24 100 pF R1 4.7 k 123 nH 27 nH 35 nH - - NT American Technical Ceramics American Technical Ceramics ATC100A680JT American Technical Ceramics ATC100A120JT American Technical Ceramics ATC100A101JT American Technical Ceramics SSM 1/10 W Chip Resistor SSM_RG1608PB472 0.5 mm, D = 3 mm, 10 Turns LLQ2012-F27N 0.5 mm, D = 2.4 mm, 5 Turns R1766, t = 0.4 mm, r = 4.5, size = 30 x 48 mm WAKA 01K0790-20 SC O L1 L11 L20 PCB SMA Connecter Maker Murata Murata IN U Symbol C1 C10 C11 Ohesangyou TOKO Ohesangyou Panasonic WAKA DI C24 L20 ED 50 OUT R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Page 5 of 11 A Business Partner of Renesas Electronics Corporation. NE5550979A COMPONENT LAYOUT OF TEST CIRCUIT FOR 157 MHz GND VGS VDS C1 L1 L11 C12 C11 C10 C20 ED C1 C21 C22 R1 L20 IN U C23 C24 TYPICAL CHARACTERISTICS 2 (TA = 25C) f = 157 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 200 mA, Pin = 0 to 27 dBm NT POWER GAIN, POWER ADDED EFFICIENCY vs. INPUT POWER OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 40 4.0 35 3.5 30 3.0 25 20 15 2.5 2.0 IDS - 3.6 V IDS - 4.5 V IDS - 6 V IDS - 7.5 V IDS - 9 V 10 1.0 5 0.5 0 -5 0 5 30 80 Gp - 3.6 V Gp - 4.5 V Gp - 6 V Gp - 7.5 V Gp - 9 V add - 3.6 V add - 4.5 V add - 6 V add - 7.5 V add - 9 V 70 60 25 50 20 40 15 30 10 20 5 10 1.5 DI Output Power Pout (dBm) SC O 35 4.5 Power Gain GP (dB) 40 Pout - 3.6 V Pout - 4.5 V Pout - 6.0 V Pout - 7.5 V Pout - 9 V Drain Current IDS (A) 45 10 15 20 Input Power Pin (dBm) R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 25 0.0 30 0 -5 0 5 10 15 20 25 Power Added Efficiency add (%) R: 0 30 Input Power Pin (dBm) Page 6 of 11 A Business Partner of Renesas Electronics Corporation. NE5550979A TEST CIRCUIT SCHEMATIC FOR 900 MHz VGS VDS R1 C1 L1 C1 IN C10 C23 C11 C20 C21 C22 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Value 1F 100 pF 15 pF Type GRM31CR72A105KA01B GRM1882C1H101JA01 ATC100A150JW Maker Murata Murata C20 3.3 pF ATC100A3R3BW American Technical Ceramics C21 3.3 pF ATC100A3R3BW American Technical Ceramics C22 12 pF ATC100A120JT American Technical Ceramics C23 100 pF R1 4.7 k L1 PCB SMA Connecter 123 nH - - NT IN U Symbol C1 C10 C11 ATC100A101JT SC O 1/10 W Chip Resistor SSM_RG1608PB472 0.5 mm, D = 3 mm, 10 Turns R1766, t = 0.4 mm, r = 4.5, size = 30 x 48 mm WAKA 01K0790-20 American Technical Ceramics American Technical Ceramics SSM Ohesangyou Panasonic WAKA DI FET NE5550979A 50 ED 50 OUT R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Page 7 of 11 A Business Partner of Renesas Electronics Corporation. NE5550979A COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz VGS VDS ED C1 C1 L1 R1 C22 C11 C10 C23 IN U C20 C21 TYPICAL CHARACTERISTICS 3 (TA = 25C) NT RF: f = 900 MHz VDS = 3.6/4.5/6/7.5/9 V, IDset = 200 mA, Pin = 0 to 32 dBm POWER GAIN, POWER ADDED EFFICIENCY vs. INPUT POWER 4.5 30 3.0 25 2.5 20 2.0 15 1.5 10 1.0 5 0.5 0 -5 0 5 30 3.5 DI Output Power Pout (dBm) 35 35 4.0 SC O 40 40 10 15 20 25 30 0.0 35 Input Power Pin (dBm) Power Gain GP (dB) 45 5.0 Pout - 3.6 V Pout - 4.5 V Pout - 6.0 V Pout - 7.5 V Pout - 9 V IDS - 3.6 V IDS - 4.5 V IDS - 6.0 V IDS - 7.5 V IDS - 9 V Drain Current IDS (A) 50 25 80 Gp - 3.6 V Gp - 4.5 V Gp - 6 V Gp - 7.5 V Gp - 9 V add - 3.6 V add - 4.5 V add - 6.0 V add - 7.5 V add - 9 V 70 60 50 20 40 15 30 10 20 5 10 0 -5 0 5 10 15 20 25 30 Power Added Efficiency add (%) OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 0 35 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Page 8 of 11 A Business Partner of Renesas Electronics Corporation. NE5550979A S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] [RF Devices] [Device Parameters] DI SC O NT IN U ED URL http://www.renesas.com/products/microwave/ R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Page 9 of 11 A Business Partner of Renesas Electronics Corporation. NE5550979A PACKAGE DIMENSIONS 79A (UNIT: mm) Source 1.2 MAX. Drain IN U 1.0 MAX. Gate 0.8 MAX. 3.60.2 NT 0.90.2 0.20.1 5.7 MAX. 0.80.15 W 0.40.15 Drain ED Source 4.4 MAX. 1.50.2 21001 4.2 MAX. 6 Gate 0.60.15 5.7 MAX. (Bottom View) 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) 4.0 0.5 1.0 DI 5.9 Gate Source Stop up the hole with a rosin or something to avoid solder flow. Drain 1.2 SC O 1.7 Through Hole: 0.2 x 33 0.5 0.5 6.1 R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Page 10 of 11 A Business Partner of Renesas Electronics Corporation. NE5550979A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2% (Wt.) or below Condition Symbol IR260 ED Soldering Method Infrared Reflow Peak temperature (molten solder temperature) : 260C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below Partial Heating Peak temperature (terminal temperature) : 350C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below IN U Wave Soldering WS260 HS350 CAUTION DI SC O NT Do not use different soldering methods together (except for partial heating). R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Page 11 of 11 Revision History Rev. Date NE5550979A Data Sheet Description Summary Page 1.00 Nov 25, 2011 - 2.00 Jul 04, 2012 p.1 Modification of ORDERING INFORMATION p.5 Addition of TEST CIRCUIT SCHEMATIC FOR 157 MHz p.6 Addition of COMPONENT LAYOUT OF TEST CIRCUIT FOR 157 MHz p.7 Addition of TEST CIRCUIT SCHEMATIC FOR 900 MHz p.8 Addition of COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz ED Mar 12, 2013 p.9 Modification of S-PARAMETERS P3 Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS P5 Modification of TEST CIRCUIT SCHEMATIC FOR 157 MHz DI SC O NT P7 Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS IN U 3.00 First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE 5. 6. 7. 8. 9. 10. 11. 12. D UE 4. IN 3. NT 2. 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DI CEL Headquarters * 4590 Patrick Henry Drive, Santa Clara, CA 95054 * Phone (408) 919-2500 * www.cel.com For a complete list of sales offices, representatives and distributors, Please visit our website: www.cel.com/contactus Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: CEL: NE5550979A-EV04-A NE5550979A-T1-A NE5550979A-A NE5550979A-EV09-A