41 fo 1 egaP 00.3.veR 0030JE9300SD90R
Mar 12, 2013
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
teehS ataD
NE5550234
Silicon Power MOS FET
FEATURES
•High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
•High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
•High Linear gain : GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)
•High ESD tolerance
•Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
•150 MHz Band Radio System
•460 MHz Band Radio System
•900 MHz Band Radio System
ORDERING INFORMATION
Part Number Order Number Package Marking Supplying Form
5V ZA-4320555EN 4320555EN •12 mm wide embossed taping
•Gate pin faces the perforation side of the tape
NE5550234-T1 NE5550234-T1-AZ
3-pin
power
minimold
(34 PKG)
(Pb-Free)
•12 mm wide embossed taping
•Gate pin faces the perforation side of the tape
•Qty 1 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550234-AZ
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter Symbol Ratings Unit
Drain to Source Voltage VDS 30 V
Gate to Source Voltage VGS 6.0 V
I tnerruC niarD DS 0.6 A
Drain Current
(50% Duty Pulsed)
IDS-pulse 1.2 A
Total Power Dissipation Note Ptot 12.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −65 to +150 °C
Note: Value at TC = 25°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0039EJ0300
Rev.3.00
Mar 12, 2013
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
NE5550234
41 fo 2 egaP 00.3.veR 0030JE9300SD90R
Mar 12, 2013
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Drain to Source Voltage VDS − 7.5 9.0 V
Gate to Source Voltage VGS 1.65 2.20 2.85 V
I tnerruC niarD DS − 0.38 − A
P rewoP tupnI in f = 460 MHz, VDS = 7.5 V − 15 20 dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
scitsiretcarahC CD
Gate to Source Leakage Current IGSS VGS = 6.0 V − − 100 nA
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IDSS VDS = 25 V − − 10 µA
Gate Threshold Voltage Vth VDS = 7.5 V, IDS = 1.0 mA 1.15 1.65 2.25 V
Drain to Source Breakdown Voltage BVDSS IDS = 10
μ
83 52 A − V
G ecnatcudnocsnarT m VDS = 7.5 V, IDS = 140±20 mA − 0.44 − S
Thermal Resistance Rth Channel to Case − 10.0 − °C/W
scitsiretcarahC FR
P rewoP tuptuO out f = 460 MHz, VDS = 7.5 V, 31.5 33.0 − dBm
I tnerruC niarD DS Pin = 15 dBm, − 0.38 − A
Power Drain Efficiency
η
d IDset = 40 mA (RF OFF) − 70 − %
Power Added Efficiency
η
add − 68 − %
G niaG raeniL L Note 1 − 23.5 − dB
Load VSWR Tolerance Note 2 f = 460 MHz, VDS = 9.0 V,
Pin = 15 dBm,
IDset = 40 mA (RF OFF)
Load VSWR=20:1(All Phase)
No Destroy
P rewoP tuptuO out − 33.0 − dBm
I tnerruC niarD DS − 0.36 − A
Power Drain Efficiency
η
d − 74 − %
Power Added Efficiency
η
add − 73 − %
G niaG raeniL L Note 3
f = 157 MHz, VDS = 7.5 V,
Pin = 15 dBm,
IDset = 40 mA (RF OFF)
− 25.8 − dB
P rewoP tuptuO out − 32.2 − dBm
I tnerruC niarD DS − 0.35 − A
Power Drain Efficiency
η
d − 62 − %
Power Added Efficiency
η
add − 60 − %
G niaG raeniL L Note 4
f = 900 MHz, VDS = 7.5 V,
Pin = 17 dBm,
IDset = 40 mA (RF OFF)
− 18.3 − dB
Notes: 1. Pin = 0 dBm
2. These characteristics values are measurement using measurement tools especially by RENESAS.
3. Pin = −5 dBm
4. Pin = 7 dBm
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
The wafer rejection criterion for standard devices is 1 reject for several samples.
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
NE5550234
41 fo 3 egaP 00.3.veR 0030JE9300SD90R
Mar 12, 2013
TEST CIRCUIT SCHEMATIC FOR 460 MHz
C20
C10
IN OUT
C22
C11 C12 C21
C1
V
DS
C1 L1R1
V
GS
NE5550234
50 Ω50 Ω
L20L10 L11
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
rekaM epyT eulaV lobmyS
C1 1
μ
ataruM L88AK501H17RM13MRG F
ataruM 10AJ072H1C2881MRG Fp 72 01C
ataruM 10ZC9R3H1C2881MRG Fp 9.3 11C
ataruM 10AJ081H1C2881MRG Fp 81 21C
ataruM 10AJ021H1C2881MRG Fp 21 02C
ataruM 10ZC5R1H1C2881MRG Fp 5.1 12C
ataruM D10AJ101H1C2612MRG Fp 001 22C
R1 4.7 kΩ MSS rotsiseR pihC W 01/1
274BP8061GR_MSS
L1 47.2 nH
φ
0.4 mm,
φ
uoygnasehO snruT 7 ,mm 2 = D
L10, L11 12 nH LL1608-FS12NJ TOKO
L20 7.8 nH
φ
0.4 mm,
φ
uoygnasehO snruT 3 ,mm 4.1 = D
PCB − R1766, t = 0.8 mm,
ε
r = 4.8, size = 30 × 40 mm Panasonic
SMA Connecter − AKAW 02-0970K10 AKAW
COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz
OUT
VGS VDS
C1
C1
IN
C1
C1
R1
R1 L1
L1
C10
C10
C11
C11 L10
L10
C12
C12L11
L11L20
L20 C20
C20 C21
C21
C22
C22
<R>
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
NE5550234
R09DS0039EJ0300 Rev.3.00 Page 4 of 14
Mar 12, 2013
TYPICAL CHARACTERISTICS 1 (TA = 25°C)
RF: f = 460MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –15 to 20 dBm
IM: f1 = 460MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40mA, Pout (2 tone) = 6 to 28 dBm
3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc)
2 Tones Output Power Pout (2 tone) (dBm)
IM
3
/IM
5
vs. 2 TONES OUTPUT POWER
2nd Harmonics 2f0 (dBc)
3rd Harmonics 3f0 (dBc)
Output Power Pout (dBm)
2f
0
, 3f
0
vs. OUTPUT POWER
Power Gain GP (dB)
Power Added Efficiency add (%)
η
Input Power Pin (dBm)
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
2f0 - 3.6 V
2f0 - 4.5 V
2f0 - 7.5 V
2f0 - 9 V
3f0 - 3.6 V
3f0 - 4.5 V
3f0 - 9 V
3f0 - 7.5V
3f0 - 6 V
2f0 - 6 V
–70
0
–10
–20
–30
–40
–50
–60
402520150510 30
IM3 - 3.6 V
IM3 - 4.5 V
IM3 - 7.5 V
IM3 - 9 V
IM5 - 3.6 V
IM5 - 4.5 V
IM5 - 9 V
IM5 - 7.5 V
IM5 - 6 V
IM3 - 6 V
–70
0
–10
–20
–30
–40
–50
–60
302520150510
Output Power Pout (dBm)
Drain Current IDS (A)
Input Power Pin (dBm)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
Pout - 3.6 V
Pout - 4.5 V
Pout - 7.5 V
Pout - 9 V
Pout - 6 V
IDS - 7.5 V
IDS - 4.5 V
IDS - 6 V
IDS - 9 V
0
40
35
30
25
20
15
10
5
25201050–20 –10 –5 15 0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
–15
add - 3.6 V
add - 7.5 V
add - 4.5 V
add - 6 V
add - 9 V
Gp - 3.6 V
Gp - 4.5 V
Gp - 7.5 V
Gp - 9 V
Gp - 6 V
00
40 80
35 70
30 60
25 50
20 40
15 30
10 20
510
25201050–20 –10 –5 15
–15
35
IDS - 3.6 V
η
η
η
η
η
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
NE5550234
R09DS0039EJ0300 Rev.3.00 Page 5 of 14
Mar 12, 2013
TEST CIRCUIT SCHEMATIC FOR 157 MHz
C20
C10
IN OUT
C22
C11 C21
C2
VDS
C1 L1R1
VGS
NE5550234
50 Ω50 Ω
L11
L10 R10
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol Value Type Maker
C10 27 pF GQM1882C1H270JB01 Murata
C11 6.8 pF GQM1882C1H6R8DB01 Murata
C20 8.2 pF GQM1882C1H8R2DB01 Murata
C21 27 pF GQM1882C1H270JB01 Murata
C22 100 pF GQM1882C1H101JB01 Murata
C1 1
μ
F GRM21BB31H105KA2L Murata
C2 1
μ
F GRM21BB31H105KA2L Murata
L10 100 nH LL1608-FSLR10J Toko
L11 47 nH D20-47N2 Ohesangyou
L1 74 nH D20-74N7 Ohesangyou
R10 5.6 Ω MCR03J5R6 Rohm
R1 4.7 kΩ MCR03J472 Rohm
PCB − R1766, t = 0.8 mm,
ε
r = 4.8, size = 30 × 40 mm Panasonic
SMA Connecter − WAKA 01K0790-20 WAKA
<R>
<R>
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
NE5550234
R09DS0039EJ0300 Rev.3.00 Page 6 of 14
Mar 12, 2013
COMPONENT LAYOUT OF TEST CIRCUIT FOR 157 MHz
C10
C11 C20 C21
C22
C1
R10
L1
C2
L10
RF IN RF OUT
VGS VDS
L11
R1
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
NE5550234
R09DS0039EJ0300 Rev.3.00 Page 7 of 14
Mar 12, 2013
TYPICAL CHARACTERISTICS 2 (TA = 25°C)
RF: f = 157 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –10 to 20 dBm
add - 3.6 V
add - 6 V
add - 4.5 V
add - 9 V
add - 7.5 V
Pout - 3.6 V
Pout - 4.5 V
Pout - 6.0 V
Pout - 7.5 V
Pout - 9 V
Output Power Pout (dBm)
Drain Current IDS (A)
Input Power Pin (dBm)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
0 0.0
40 0.8
35 0.7
30 0.6
25 0.5
20 0.4
15 0.3
10 0.2
5 0.1
251050–15–10 –5 15
Power Gain GP (dB)
Power Added Efficiency add (%)
η
Input Power Pin (dBm)
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
Gp - 3.6 V
Gp - 4.5 V
Gp - 6 V
Gp - 7.5 V
Gp - 9 V
00
40 80
35 70
30 60
25 50
20 40
15 30
10 20
510
IDS - 3.6 V
IDS - 6 V
IDS - 4.5 V
IDS - 9 V
IDS - 7.5 V
η
η
η
η
η
20 251050–15–10 –5 15 20
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
NE5550234
R09DS0039EJ0300 Rev.3.00 Page 8 of 14
Mar 12, 2013
TEST CIRCUIT SCHEMATIC FOR 900 MHz
C10
IN OUT
C22
C21
C20
C2
V
DS
C1 L1R1
V
GS
NE5550234
50 Ω50 Ω
L11
L10
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol Value Type Maker
C10 10 pF GQM1882C1H100JB01 Murata
C20 6.8 pF GQM1882C1H6R8DB01 Murata
C21 1 pF GQM1884C2A1R0CB01 Murata
C22 100 pF GQM1882C1H101JB01 Murata
C1 1
μ
F GRM21BB31H105KA2L Murata
C2 1
μ
F GRM21BB31H105KA2L Murata
L10 2.7 nH LL1608-FSL2N7S Toko
L1 74 nH D20-74N7 Ohesangyou
R1 4.7 kΩ MCR03J472 Rohm
PCB − R1766, t = 0.8 mm, εr = 4.8, size = 30 × 40 mm Panasonic
SMA Connecter − WAKA 01K0790-20 WAKA
<R>
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
NE5550234
R09DS0039EJ0300 Rev.3.00 Page 9 of 14
Mar 12, 2013
COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz
C10
C20 C21
C22
C1
R1 L1
C2
L10
RF IN RF OUT
VGS VDS
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
NE5550234
R09DS0039EJ0300 Rev.3.00 Page 10 of 14
Mar 12, 2013
TYPICAL CHARACTERISTICS 3 (TA = 25°C)
RF: f = 900 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –10 to 20 dBm
Input Power P
in
(dBm)
POWER GAIN, DRAIN CURRENT
vs. INPUT POWER
0
35
30
25
20
15
10
5
0
35
30
25
20
15
10
5
0
100
80
60
40
20
25201050–15–10 –5 15 25201050–15–10 –5 15
Power Gain G
P
(dB)
Power Added Efficiency
add
(%)
η
Input Power P
in
(dBm)
OUTPUT POWER, POWER ADDED
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm)
Drain Current I
DS
(A)
140
120
0
0.5
0.4
0.3
0.2
0.1
0
100
80
60
40
20
0
100
80
60
40
20
0.7
0.6
add
- 6.0 V
add
- 4.5 V
add
- 7.5 V
add
- 9 V
add
- 3.6 V
G
P
- 3.6 V
G
P
- 4.5 V
G
P
- 6 V
G
P
- 7.5 V
G
P
- 9 V
η
η
η
η
η
I
DS
- 3.6 V
I
DS
- 6.0 V
I
DS
- 4.5 V
I
DS
- 9 V
I
DS
- 7.5 V
P
out
- 3.6 V
P
out
- 4.5 V
P
out
- 6.0 V
P
out
- 7.5 V
P
out
- 9 V
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
NE5550234
R09DS0039EJ0300 Rev.3.00 Page 11 of 14
Mar 12, 2013
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
NE5550234
R09DS0039EJ0300 Rev.3.00 Page 12 of 14
Mar 12, 2013
MOUNTING PAD LAYOUT DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
2.2
1.0
2.0 2.0
1.0 1.0
1.4
0.4 0.92.8
45°45°
Remark The mounting pad layout in this document is for reference only.
When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder
bridge and so on, in order to optimize the design.
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
NE5550234
R09DS0039EJ0300 Rev.3.00 Page 13 of 14
Mar 12, 2013
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
(Bottom View) (Side View)
PIN CONNECTIONS
1. Drain
2. Source
3. Gate
1.5±0.1
0.41
+0.03
–0.06
4.5±0.1
0.42±0.060.42±0.06
1.6±0.2
3.0
1.5
2
13
2.5±0.1
4.0±0.25
0.8 MIN.
0.47±0.06
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
NE5550234
R09DS0039EJ0300 Rev.3.00 Page 14 of 14
Mar 12, 2013
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
IR260
Wave Soldering Peak temperature (molten solder temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature)
: 120°C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
WS260
Partial Heating Peak temperature (terminal temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
HS350
CAUTION
Do not use different soldering methods together (except for partial heating).
A Business Partner of Renesas Electronics Corporation.
PHASE-OUT
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History NE5550234 Data Sheet
Description
Rev. Date
Page Summary
1.00 Apr 25, 2012 − First edition issued
2.00 Jul 04, 2012 p.2 Modification of ELECTRICAL CHARACTERISTICS
3.00 Mar 12, 2013 P3
Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
P5 Modification of TEST CIRCUIT SCHEMATIC FOR 157 MHz
P8
Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
PHASE-OUT
NOTICE
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does
not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
3. California Eastern Laboratories and Renesas Electronics do not assume any liability for infringement of patents, copyrights, or other intellectual property
rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express,
implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas
Electronics or others.
4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. California Eastern
Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modication, copy
or otherwise misappropriation of Renesas Electronics product.
5. Renesas Electronics products are classied according to the following two quality grades: “Standard” and “High Quality”. The recommended applications
for each Renesas Electronics product depends on the product’s quality grade, as indicated below. “Standard”: Computers; ofce equipment; communications
equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and
industrial robots etc. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); trafc control systems; anti-disaster systems; anti-crime
systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct
threat to human life or bodily injury (articial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear
reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application for which it is not intended. California Eastern Laboratories and Renesas
Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product
for which the product is not intended by California Eastern Laboratories or Renesas Electronics.
6. You should use the Renesas Electronics products described in this document within the range specied by California Eastern Laboratories, especially with
respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product
characteristics. California Eastern Laboratories shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products
beyond such specied ranges.
7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specic characteristics such as
the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation
resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by
re in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy,
re control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of
microcomputer software alone is very difcult, please evaluate the safety of the nal products or systems manufactured by you.
8. Please contact a California Eastern Laboratories sales ofce for details as to environmental matters such as the environmental compatibility of each Renesas
Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of
controlled substances, including without limitation, the EU RoHS Directive. California Eastern Laboratories and Renesas Electronics assume no liability for
damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document
for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When
exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics
product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and
Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories.
12. Please contact a California Eastern Laboratories sales ofce if you have any questions regarding the information contained in this document or Renesas
Electronics products, or if you have any other inquiries.
NOTE 1: “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
NOTE 2: “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
NOTE 3: Products and product information are subject to change without notice.
CEL Headquarters • 4590 Patrick Henry Drive, Santa Clara, CA 95054 • Phone (408) 919-2500 • www.cel.com
For a complete list of sales ofces, representatives and distributors,
Please visit our website: www.cel.com/contactus
PHASE-OUT
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
CEL:
NE5550234-T1-AZ NE5550234-AZ