A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High power added efficiency : add = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High Linear gain : GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm) High ESD tolerance Suitable for VHF to UHF-BAND Class-AB power amplifier. UT * * * * * APPLICATIONS O * 150 MHz Band Radio System * 460 MHz Band Radio System * 900 MHz Band Radio System ORDERING INFORMATION Order Number NE5550234-AZ NE5550234-T1 NE5550234-T1-AZ Package 3-pin power minimold (34 PKG) (Pb-Free) Marking V5 Supplying Form * 12 mm wide embossed taping * Gate pin faces the perforation side of the tape SE - Part Number NE5550234 * 12 mm wide embossed taping * Gate pin faces the perforation side of the tape * Qty 1 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE5550234-AZ ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified) Operation in excess of any one of these parameters may result in permanent damage. Symbol VDS VGS IDS IDS-pulse Ratings 30 6.0 0.6 1.2 Unit V V A A Drain Current (50% Duty Pulsed) Total Power Dissipation Note Channel Temperature Storage Temperature Ptot Tch Tstg 12.5 150 -65 to +150 W C C PH A Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Note: Value at TC = 25C CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 1 of 14 A Business Partner of Renesas Electronics Corporation. NE5550234 RECOMMENDED OPERATING RANGE (TA = 25C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. - 1.65 - - TYP. 7.5 2.20 0.38 15 MAX. 9.0 2.85 - 20 Unit V V A dBm ELECTRICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) Vth BVDSS Gm Rth Pout IDS d add GL Note 1 VGS = 6.0 V VDS = 25 V MIN. TYP. MAX. Unit - - - - 100 10 nA A 1.15 25 - - 1.65 38 0.44 10.0 2.25 - - - V V S C/W 33.0 0.38 70 68 23.5 - - - - - dBm A % % dB UT IGSS IDSS Test Conditions VDS = 7.5 V, IDS = 1.0 mA IDS = 10 A VDS = 7.5 V, IDS = 14020 mA Channel to Case O Symbol f = 460 MHz, VDS = 7.5 V, Pin = 15 dBm, IDset = 40 mA (RF OFF) 31.5 - - - - SE - Parameter DC Characteristics Gate to Source Leakage Current Drain to Source Leakage Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage Drain to Source Breakdown Voltage Transconductance Thermal Resistance RF Characteristics Output Power Drain Current Power Drain Efficiency Power Added Efficiency Linear Gain Load VSWR Tolerance Pout IDS d add GL Note 3 Pout IDS PH A Output Power Drain Current Power Drain Efficiency Power Added Efficiency Linear Gain Output Power Drain Current Power Drain Efficiency Power Added Efficiency Linear Gain Note 2 Notes: 1. 2. 3. 4. d add GL Note 4 f = 460 MHz, VDS = 9.0 V, Pin = 15 dBm, IDset = 40 mA (RF OFF) Load VSWR=20:1(All Phase) f = 157 MHz, VDS = 7.5 V, Pin = 15 dBm, IDset = 40 mA (RF OFF) f = 900 MHz, VDS = 7.5 V, Pin = 17 dBm, IDset = 40 mA (RF OFF) No Destroy - - - - 33.0 0.36 74 73 - - - - dBm A % % - - - - - 25.8 32.2 0.35 62 60 - - - - - dB dBm A % % - 18.3 - dB Pin = 0 dBm These characteristics values are measurement using measurement tools especially by RENESAS. Pin = -5 dBm Pin = 7 dBm Remark DC performance is 100% testing. RF performance is testing several samples per wafer. The wafer rejection criterion for standard devices is 1 reject for several samples. R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 2 of 14 A Business Partner of Renesas Electronics Corporation. NE5550234 TEST CIRCUIT SCHEMATIC FOR 460 MHz VGS VDS R1 C1 L1 C1 IN C10 L10 C11 L11 L20 C12 C22 50 UT 50 OUT C20 NE5550234 C21 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type GRM31MR71H105KA88L GRM1882C1H270JA01 GRM1882C1H3R9CZ01 C12 C20 C21 C22 R1 18 pF 12 pF 1.5 pF 100 pF 4.7 k GRM1882C1H180JA01 GRM1882C1H120JA01 GRM1882C1H1R5CZ01 GRM2162C1H101JA01D 1/10 W Chip Resistor SSM_RG1608PB472 0.4 mm, D = 2 mm, 7 Turns LL1608-FS12NJ 0.4 mm, D = 1.4 mm, 3 Turns R1766, t = 0.8 mm, r = 4.8, size = 30 x 40 mm WAKA 01K0790-20 SE - L1 L10, L11 L20 PCB SMA Connecter O Value 1 F 27 pF 3.9 pF 47.2 nH 12 nH 7.8 nH - - Maker Murata Murata Murata Murata Murata Murata Murata SSM Ohesangyou TOKO Ohesangyou Panasonic WAKA COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz VGS VDS C1 C1 PH A <R> Symbol C1 C10 C11 IN C10 C11 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 R1 L10 L11 C12 L1 L20 C22 OUT C20 C21 Page 3 of 14 A Business Partner of Renesas Electronics Corporation. NE5550234 TYPICAL CHARACTERISTICS 1 (TA = 25C) RF: f = 460MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = -15 to 20 dBm IM: f1 = 460MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40mA, Pout (2 tone) = 6 to 28 dBm OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 40 0.7 35 0.6 30 80 Gp - 3.6 V Gp - 4.5 V Gp - 7.5 V Gp - 9 V Gp - 6 V add - 3.6 V add - 4.5 V add - 7.5 V add - 9 V add - 6 V 70 20 0.4 15 0.3 10 0.2 10 20 5 0.1 5 10 25 0 -20 -15 -10 -5 20 40 15 30 0 5 10 15 20 25 0.0 0 -20 -15 -10 -5 Input Power Pin (dBm) -30 -40 -50 -60 -70 0 5 10 15 20 25 30 35 40 Output Power Pout (dBm) 3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc) 2nd Harmonics 2f0 (dBc) 3rd Harmonics 3f0 (dBc) -20 5 10 15 20 25 0 IM3/IM5 vs. 2 TONES OUTPUT POWER 0 PH A -10 2f0 - 3.6 V 2f0 - 4.5 V 2f0 - 7.5 V 2f0 - 9 V 3f0 - 3.6 V 3f0 - 4.5 V 3f0 - 7.5V 3f0 - 9 V 2f0 - 6 V 3f0 - 6 V 0 Input Power Pin (dBm) 2f0, 3f0 vs. OUTPUT POWER 0 50 O Drain Current IDS (A) 0.5 Power Added Efficiency add (%) 60 25 SE - Output Power Pout (dBm) 30 0.8 UT 35 Pout - 3.6 V Pout - 4.5 V Pout - 7.5 V Pout - 9 V Pout - 6 V IDS - 3.6 V IDS - 4.5 V IDS - 7.5 V IDS - 9 V IDS - 6 V Power Gain GP (dB) 40 POWER GAIN, POWER ADDED EFFICIENCY vs. INPUT POWER IM3 - 3.6 V IM3 - 4.5 V IM3 - 7.5 V IM3 - 9 V IM5 - 3.6 V IM5 - 4.5 V IM5 - 7.5 V IM5 - 9 V IM3 - 6 V IM5 - 6 V -10 -20 -30 -40 -50 -60 -70 0 5 10 15 20 25 30 2 Tones Output Power Pout (2 tone) (dBm) Remark The graphs indicate nominal characteristics. R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 4 of 14 A Business Partner of Renesas Electronics Corporation. NE5550234 TEST CIRCUIT SCHEMATIC FOR 157 MHz VGS VDS R1 C1 L1 C2 IN L10 C10 R10 NE5550234 C11 L11 50 C22 UT 50 OUT C20 C21 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS C20 C21 8.2 pF 27 pF GQM1882C1H8R2DB01 GQM1882C1H270JB01 C22 C1 C2 L10 L11 L1 R10 R1 PCB SMA Connecter 100 pF 1 F 1 F 100 nH 47 nH 74 nH 5.6 4.7 k - - GQM1882C1H101JB01 GRM21BB31H105KA2L GRM21BB31H105KA2L LL1608-FSLR10J D20-47N2 D20-74N7 MCR03J5R6 MCR03J472 R1766, t = 0.8 mm, r = 4.8, size = 30 x 40 mm WAKA 01K0790-20 O Type GQM1882C1H270JB01 GQM1882C1H6R8DB01 Maker Murata Murata Murata Murata Murata Murata Murata Toko Ohesangyou Ohesangyou Rohm Rohm Panasonic WAKA PH A <R> Value 27 pF 6.8 pF SE - <R> Symbol C10 C11 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 5 of 14 A Business Partner of Renesas Electronics Corporation. NE5550234 COMPONENT LAYOUT OF TEST CIRCUIT FOR 157 MHz VDS UT VGS C2 RF IN RF OUT C1 R10 C20 L11 C21 C22 PH A SE - C11 L10 O C10 L1 R1 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 6 of 14 A Business Partner of Renesas Electronics Corporation. NE5550234 TYPICAL CHARACTERISTICS 2 (TA = 25C) RF: f = 157 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = -10 to 20 dBm POWER GAIN, POWER ADDED EFFICIENCY vs. INPUT POWER OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 35 30 0.6 30 25 0.5 20 0.4 0.2 0 -15 -10 0.1 -5 25 50 20 40 15 30 10 20 5 10 SE - 5 60 0 5 10 15 20 0.0 25 Input Power Pin (dBm) 0 -15 -10 -5 0 5 10 15 20 Power Added Efficiency add (%) 10 0.3 IDS - 3.6 V IDS - 4.5 V IDS - 6 V IDS - 7.5 V IDS - 9 V 70 O Output Power Pout (dBm) 15 80 Gp - 3.6 V Gp - 4.5 V Gp - 6 V Gp - 7.5 V Gp - 9 V add - 3.6 V add - 4.5 V add - 6 V add - 7.5 V add - 9 V UT 0.7 35 Power Gain GP (dB) 40 Pout - 3.6 V Pout - 4.5 V Pout - 6.0 V Pout - 7.5 V Pout - 9 V Drain Current IDS (A) 0.8 40 0 25 Input Power Pin (dBm) PH A Remark The graphs indicate nominal characteristics. R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 7 of 14 A Business Partner of Renesas Electronics Corporation. NE5550234 TEST CIRCUIT SCHEMATIC FOR 900 MHz VGS VDS R1 C1 L1 C2 IN OUT C10 NE5550234 L11 C20 L10 C22 50 UT 50 C21 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type GQM1882C1H100JB01 GQM1882C1H6R8DB01 C21 C22 C1 C2 L10 L1 R1 PCB SMA Connecter 1 pF 100 pF 1 F 1 F 2.7 nH 74 nH 4.7 k - - GQM1884C2A1R0CB01 GQM1882C1H101JB01 GRM21BB31H105KA2L GRM21BB31H105KA2L LL1608-FSL2N7S D20-74N7 MCR03J472 R1766, t = 0.8 mm, r = 4.8, size = 30 x 40 mm WAKA 01K0790-20 SE - O Value 10 pF 6.8 pF Maker Murata Murata Murata Murata Murata Murata Toko Ohesangyou Rohm Panasonic WAKA PH A <R> Symbol C10 C20 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 8 of 14 A Business Partner of Renesas Electronics Corporation. NE5550234 COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz VDS UT VGS C2 C1 R1 L1 C22 C20 C21 PH A SE - C10 L10 RF OUT O RF IN R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 9 of 14 A Business Partner of Renesas Electronics Corporation. NE5550234 TYPICAL CHARACTERISTICS 3 (TA = 25C) f = 900 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = -10 to 20 dBm OUTPUT POWER, POWER ADDED EFFICIENCY vs. INPUT POWER 120 30 20 80 15 60 10 40 5 20 0 -15 -10 -5 0.6 25 0.5 20 0.4 15 0.3 O 100 0.7 GP - 3.6 V GP - 4.5 V GP - 6 V GP - 7.5 V GP - 9 V IDS - 3.6 V IDS - 4.5 V IDS - 6.0 V IDS - 7.5 V IDS - 9 V UT 35 10 0.2 5 0.1 SE - Output Power Pout (dBm) 25 140 Power Gain GP (dB) 30 Pout - 3.6 V Pout - 4.5 V Pout - 6.0 V Pout - 7.5 V Pout - 9 V add - 3.6 V add - 4.5 V add - 6.0 V add - 7.5 V add - 9 V Power Added Efficiency add (%) 35 POWER GAIN, DRAIN CURRENT vs. INPUT POWER 0 5 10 15 20 25 0 Input Power Pin (dBm) 0 -15 -10 -5 0 5 10 15 20 25 Drain Current IDS (A) RF: 0 Input Power Pin (dBm) PH A Remark The graphs indicate nominal characteristics. R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 10 of 14 A Business Partner of Renesas Electronics Corporation. NE5550234 S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] [RF Devices] [Device Parameters] PH A SE - O UT URL http://www.renesas.com/products/microwave/ R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 11 of 14 A Business Partner of Renesas Electronics Corporation. NE5550234 MOUNTING PAD LAYOUT DIMENSIONS 3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm) UT 1.4 45 0.4 2.8 45 0.9 2.2 1.0 1.0 1.0 2.0 O 2.0 Remark The mounting pad layout in this document is for reference only. When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder PH A SE - bridge and so on, in order to optimize the design. R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 12 of 14 A Business Partner of Renesas Electronics Corporation. NE5550234 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm) (Bottom View) (Side View) 4.50.1 1.50.1 0.420.06 4.00.25 3 UT 0.8 MIN. 2 1 2.50.1 1.60.2 0.420.06 0.470.06 1.5 O 3.0 0.41+0.03 -0.06 PIN CONNECTIONS PH A SE - 1. Drain 2. Source 3. Gate R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 13 of 14 A Business Partner of Renesas Electronics Corporation. NE5550234 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2% (Wt.) or below Condition Symbol IR260 UT Soldering Method Infrared Reflow Peak temperature (molten solder temperature) : 260C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below WS260 Partial Heating Peak temperature (terminal temperature) : 350C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below HS350 O Wave Soldering CAUTION PH A SE - Do not use different soldering methods together (except for partial heating). R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Page 14 of 14 Revision History Rev. Date NE5550234 Data Sheet Description Summary Page 1.00 Apr 25, 2012 - 2.00 Jul 04, 2012 p.2 Modification of ELECTRICAL CHARACTERISTICS 3.00 Mar 12, 2013 P3 Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS P5 Modification of TEST CIRCUIT SCHEMATIC FOR 157 MHz P8 Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS PH A SE - O UT First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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CEL Headquarters * 4590 Patrick Henry Drive, Santa Clara, CA 95054 * Phone (408) 919-2500 * www.cel.com For a complete list of sales offices, representatives and distributors, Please visit our website: www.cel.com/contactus Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: CEL: NE5550234-T1-AZ NE5550234-AZ