DMA150E1600NA
Single Diode
Standard Rectifier
2
3
1
4
Part number
DMA150E1600NA
Backside: Isolated
FAV
F
VV1.05
RRM
150
1600
=
V= V
I= A
Features / Ad vantages: Applications: Package:
Planar passivated chips
Very low leakage current
Very low forward voltage drop
Improved thermal behaviour
Diode for main rectification
For single and three phase
bridge configurations
SOT-227B (minibloc)
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Base plate: Copper
internally DCB isolated
Advanced power cycling
Isolation Voltage: V~
3000
IXYS reserves the right to change limits, conditions and dimensions. 20130117aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DMA150E1600NA
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.15
R0.2 K/W
R
min.
150
V
RSM
V
200T = 25°C
VJ
T = °C
VJ
mA3.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
110
P
tot
620 WT = 25°C
C
RK/W
150
1600
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Unit
1.36
T = 25°C
VJ
150
V
F0
V0.78T = °C
VJ
150
r
F
1.8 m
V1.05T = °C
VJ
I = A
F
V
150
1.33
I = A
F
300
I = A
F
300
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1600
max. re pe titive reverse b locki n g volt a ge T = 25°C
VJ
C
J
60
junction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
3.00
3.24
32.5
31.6
kA
kA
kA
kA
2.55
2.76
45.0
43.7
1600
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20130117aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DMA150E1600NA
Ratings
abcde
YYWWZ XXXXXX
Product Marking
Logo Part No.
DateCode Assembly Code
Assembly Line
D
M
A
150
E
1600
NA
Part number
Diode
Standard Rectifier
(up to 1800V)
Single Diode
SOT-227B (minibloc)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
VJ
°C
M
D
Nm1.5
mounting torque 1.1
T
stg
°C150
storage temperature -40
Weight g30
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
M
T
Nm1.5
terminal torque 1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 150 A
per terminal
150-40
terminal to terminal
SOT-227B
(
minibloc
)
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
50/60 Hz, RMS; I 1 mA
ISOL
DMA150E1600NA 508942Tube 10DMA150E1600NAStandard
2500
3000
ISOL
threshold voltage V0.78
m
V
0 max
R
0 max
slope resistance * 1
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130117aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DMA150E1600NA
2
3
1
4
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20130117aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DMA150E1600NA
0.001 0.01 0.1 1
1000
1250
1500
1750
2000
2250
2500
23456789011
10
4
10
5
0.5 1.0 1.5
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160
0
40
80
120
160
200
1 10 100 1000 10000
0.00
0.04
0.08
0.12
0.16
0.20
0 25 50 75 100 125 150 175
0
50
100
150
200
250
300
350
I
F
[A]
V
F
[V]
I
FSM
[A]
t[s]
I
2
t
[A
2
s]
t[ms]
P
tot
[W]
I
F(AV)M
T]A[
amb
[°C]
I
F(AV)M
[A]
[°C]
Z
thJC
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
t[ms]
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.017 0.01
2 0.013 0.00001
3 0.010 0.01
4 0.04 0.04
5 0.12 0.3
0 25 50 75 100 125 150 175
50 Hz, 80%V
RRM
T
VJ
=45°C
T
VJ
= 150°C
T
VJ
=45°C
V
R
= 0 V
T
VJ
=150°C
R
thHA
=
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
= 25°C
DC =
1
0.5
0.4
0.33
0.17
0.08
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130117aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved