T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 1 of 8
2N6788U and 2N6790U
Compliant N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/555
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
These 2N6788U and 2N67 90U devices are military qualified up to a JANTXV level for high-
relia bi li ty applic a tions . Microsemi also offers numerous other products to meet higher and
lower power voltage regulation applications.
U-18 LCC
Package
Also available in:
TO-205AF Package
(leaded)
2N6788 & 2N6790
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent of JEDEC registered 2N6788 and 2N6790 nu mber s.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/555.
• RoHS compliant by design.
APPLICATIONS / BENEFITS
• High frequency operation.
• Lightweight, low-profile package.
• ESD rated to class 1A.
MAXIMUM RATINGS @ TC = +25 °C unless otherwise noted
Parameters / Test Conditions Symbol Value Unit
Junction & Storage Temperature
TJ, Tstg
-55 to +150
°C
Thermal Resi stan ce Jun cti on-to-Case (see Figure 1)
RӨJC
8.93
ºC/W
Total Power Dissipation (1)
PT
0.8
W
Drain to Gate Voltage
VDG
100
200
V
Drain – Source Voltage
VDS
100
200
V
Gate – Source Voltage
VGS
± 20
V
Drain Current, dc @ T
C
= +25 °C (2)
(see Figure ?)
ID1
4.5
2.8
A
Drain Current, dc @ TC = +100 °C 2N6788U
ID2 2.8
1.8
A
Off-State Current (3)
IDM
18
11
A (pk)
Source Current
IS
4.5
2.8
A
Notes: 1. Derated linearly by 0.11 W/°C for TC > +25 °C.
2. The following formula derives the maximum theoretical ID limit. ID is also limited by package and internal
wires and may be limited due to pin diameter.
3. IDM = 4 x ID1; ID1 as calculated in note 2.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 2 of 8
2N6788U and 2N6790U
MECHANICAL and PACKAGING
• CASE: Ceramic LCC-18 with kovar gold plated lid.
• TERMINALS: Gold plating over nickel.
• MARKING: Manufacturer's ID, part number, date code, ESD symbol at pin 1 locat ion.
• TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N6790 U
Reliability Level
JAN=JAN level
JANTX=JANTX level
JANTXV=JANTXV level
Blank = Commercial
JEDEC type number
Surface Mount pack ag e
SYMBOLS & DEFINITIONS
Symbol
Definition
ID
Drain current.
IF
Forward current.
TC
Case temperature.
VDD
Drain supply voltage.
VDS
Drain to source voltage.
VGS
Gate to source voltage.
T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 3 of 8
2N6788U and 2N6790U
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 1 mA 2N6788U
2N6790U V(BR)DSS 100
200 V
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25 mA
VDS ≥ VGS, ID = 0.25 mA, Tj = +125 °C
VDS ≥ VGS, ID = 0.25 mA, Tj = -55 °C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
Gate Current
VGS = ±20 V, VDS = 0 V
VGS = ±20 V, VDS = 0 V, Tj = +125 °C
IGSS1
IGSS2
±100
±200 nA
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS
Drain Current
VGS = 0V, VDS = 80 V
VGS = 0V, VDS = 160 V
2N6788U
2N6790U
IDSS1
25
µA
Drain Current
VGS = 0V, VDS = 80 V, Tj = +125 °C
VGS = 0V, VDS = 160 V, Tj = +125 °C
2N6788U
2N6790U
IDSS2
0.25
mA
Static Drain-Source On-S tat e R esistance
VGS = 10 V, ID = 3.5 A pulsed
VGS = 10 V, ID = 2.25 A pulsed
2N6788U
2N6790U
rDS(on)1
0.30
0.80
Ω
Static Drain-Source On-S tat e R esistance
VGS = 10 V, ID = 6.0 A pulsed
VGS = 10 V, ID = 3.5 A pulsed
2N6788U
2N6790U
rDS(on)2
0.35
0.85
Ω
Static Drain-Source On-S tat e R esist an ce
Tj = +125 °C:
VGS = 10 V, ID = 3.5 A pulsed
VGS = 10 V, ID = 2.25 A pulsed
2N6788U
2N6790U
rDS(on)3
0.54
1.50
Ω
Diode Forward Voltage
V
GS
= 0 V, I
D
= 6.0 A pulsed
VGS = 0 V, ID = 3.5 A puls ed
2N6788U
2N6790U
VSD
1.8
1.5
V
T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 4 of 8
2N6788U and 2N6790U
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
DYNAMIC CHA RACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
VGS = 10 V, ID = 6.0 A, VDS = 50 V
VGS = 10 V, ID = 3.5 A, VDS = 100 V
2N6788U
2N6790U
Qg(on)
18.0
14.3
nC
Gate to Source Charge
VGS = 10 V, ID = 6.0 A, VDS = 50 V
VGS = 10 V, ID = 3.5 A, VDS = 100 V
2N6788U
2N6790U
Qgs
4.0
3.0
nC
Gate to Drain Charge
VGS = 10 V, ID = 6.0 A, VDS = 50 V
VGS = 10 V, ID = 3.5 A, VDS = 100 V
2N6788U
2N6790U
Qgd
9.0
9.0
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-on delay time
ID = 6.0 A, VGS = 10 V, RG = 7.5 Ω, VDD = 35 V
ID = 3.5 A, VGS = 10 V, RG = 7.5
Ω
, VDD = 74 V
2N6788U
2N6790U
td(on)
40
ns
Rinse time
ID = 6.0 A, VGS = 10 V, RG = 7.5 Ω, VDD = 35 V
ID = 3.5 A, VGS = 10 V, RG = 7.5
Ω
, VDD = 74 V
2N6788U
2N6790U
tr
70
50
ns
Turn-off delay time
ID = 6.0 A, VGS = 10 V, RG = 7.5 Ω, VDD = 35 V
ID = 3.5 A, VGS = 10 V, RG = 7.5 Ω, VDD = 74 V
2N6788U
2N6790U
td(off)
40
50
ns
Fall time
ID = 6.0 A, VGS = 10 V, RG = 7.5 Ω, VDD = 35 V
ID = 3.5 A, VGS = 10 V, RG = 7.5 Ω, VDD = 74 V
2N6788U
2N6790U
tf
70
50
ns
Diode Reverse Recovery Time
di/dt = 100 A/µs, VDD ≤ 50 V, IF = 6.0 A
di/dt = 100 A/µs, VDD ≤ 50 V, IF = 3.5 A
2N6788U
2N6790U
trr
240
400
ns
T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 5 of 8
2N6788U and 2N6790U
GRAPHS
t1, RECTANGULAR PULSE DURATION (SECONDS)
Figure 1
Thermal Impedance Curves
TC CASE TEMPERATURE (°C) TC CASE TEMPERATURE (°C)
(2N6788U) (2N6790U)
Figure 2
Maximum Drain Current vs. Case Temperature Graph
ID DRAIN CURRENT (AMPERES)
THERMAL RESPONSE (Z
ӨJC
)
ID DRAIN CURRENT (AMPERES)
T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 6 of 8
2N6788U and 2N6790U
GRAPHS (continued)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Maximum Safe Operating Area (2N6788U)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Maximum Safe Operating Area (2N6790U)
ID DRAIN CURRENT (AMPERES)
ID DRAIN CURRENT (AMPERES)
T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 7 of 8
2N6788U and 2N6790U
PACKAGE DIMENSIONS
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
.345
.360
8.77
9.14
BW
.280
.295
7.12
7.49
CH
.095
.115
2.42
2.92
LL1
.040
.055
1.02
1.39
LL2
.055
.065
1.40
1.65
LS
.050 BSC
1.27 BSC
LS1
.025 BSC 0.635 BSC
LS2
.008 BSC
0.203 BSC
LW
.020
.030
0.51
0.76
Q1
.105 REF
2.67 REF
Q2
.120 REF
3.05 REF
Q3
.045
.055
1.14
1.40
TL
.070
.080
1.78
2.03
TW
.120
.130
3.05
3.30
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general
information only.
3. In accordance with ASME Y14.5M,
diameters are equivalent to Φx
symbology.
T4-LDS-0164-1, Rev. 1 (121482) ©2012 Microsemi Corporation Page 8 of 8
2N6788U and 2N6790U
PAD LAYOUT
PAD ASSIGNM ENT S