NTE29 (NPN) & NTE30 (PNP)
Silicon Complementary Transistors
High Power, High Current Switch
Description:
The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed
for use in high power amplifier and switching circuit applications.
Features:
DHigh Current Capability: IC = 50A (Continuous)
DDC Current Gain: hFE= 15 to 60 @ IC = 25A
DLow Collector-Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25A
Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-Base Voltage, VCB 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-Base Voltage, VEB 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, IC50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = +25°C), PD300W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 1.715W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ-65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg -65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction-to-Case, RthJC 0.584°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage VCEO(sus) IC = 0.2A, IB = 0, Note 1 80 - - V
Collector Cutoff Current ICEO VCE = 40V, IB = 0 - - 1 mA
ICEX VCE = 80V, VEB(off) = 1.5V - - 2 mA
VCE = 80V, VEB(off) = 1.5V,
TC = +150°C
- - 10 mA
ICBO VCB = 80V, IE = 0 - - 2 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 - - 5 mA
Electrical Characteristics (Cont'd): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain hFE IC = 25A, VCE = 2V 15 - 60
IC = 50A, VCE = 5V 5 - -
Collector-Emitter Saturation Voltage VCE(sat) IC = 25A, IB = 2.5A - - 1 V
IC = 50A, IB = 10A - - 5 V
Base-Emitter Saturation Voltage VBE(sat) IC = 25A, IB = 2.5A - - 2 V
Base-Emitter ON Voltage VBE(on) IC = 25A, VCE = 2V - - 2 V
Dynamic Characteristics
Current Gain-Bandwidth Product fTIC = 5A, VCE = 10V, f = 1MHz 2 - - MHz
Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz - - 1200 pF
Small-Signal Current Gain hfe IC = 10A, VCE = 5V, f = 1kHz 15 - -
Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.063 (1.6) Max.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
