2N5027 -3N69 Numerical Index stl > MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS =|c = = = = TYPE |] & REPLACE. | PAGE | yse | Po S| Ty | Ves | Vee |= hee @ Ic Veesan @ Ie 2 [= {S| MENT | NUMBER & g z #| 18] 2/8 z\)o @ 25C | B] C | (wolts) | (voits) |S | (min) (max) S| (valts) a 3 5/2 2N5027 S{N MSS 320M JA 120 30 |0 50 150; 150M 0.45 150M 2N5028 SIN MSS 320M JA 120 30 {O | 100 300) 150M 0.45 150M 2N5029 S IN HSS 320M JA 120 15 40 40 129 LOM 0.25 LOM 2N5030 S|N HSS 320M |A 129 12 Jo 30 10M 0.25 LOM 2N5034 S |N LPA 83W {Cc 150 55 45 {R 20 70] 2.5A 2.5 6.0A 15 E 2N5035 S JN LPA 83W 1 C 150 55 45 |[R 20 70] 3.0A 3.0 0A 15 E 2N5036 S JN LPA 83W Cc 150 70 60 FR 20 70) 2.548 2.5 6.0A i5 E 2N5037 Ss [N LPA 83W TC 150 70 60 |R 20 70) 3.0A 3.0 8.0A 15 E 2N5043 GP 30M |A 125 15 7.0 40 150] 3.0M 2N5044 GIP 30M |A 125 15 7.0 10 150) 3.0M 2N5045 thru Field Effect Transistors, see Table on Page 1-166 2N5047 2N5050 Ss ]N LPA 40W )C 200 120 }0 35 105) O.5A 0.9 Q.5A 20M] T 2N5051 S }N LPA 40W 1C 200 150 |0 35 105} O.5A 0.9 0.54 20Mi T 2N5052 Ss |N LPA 4OW fC 200 200 |0 35 105) 0,5A 0.9 O.5A 20M; T 2N5055 S |[P HSS 200M [A 125 12 12 [0 30 100 30M 0.13 1.0M 2N5056 [S [P HSS | 360M JA | 200} 15 15 }O0 7 30 {4 100] 30M 0.13 1.0M 2N5057 S]|P HSS 360M {A 200 15 15 ]0 40 100 30M 0.13 1.0M 2N5058 S |N 1.0W }C 200; 300 300 |0 35 150 30M 2N5059 5 ]N 1.0W Cc 200) 250 250 70 30 150 30M 2N5060 : thru Thyristors, see Table on Page 1-154 2N5063 2N5067 S|N 7-192 LPA |87.5W |C | 200 40 40 {0 20 80 1.0A 0.4 1.0A 20 JE 4. OMT 2N5068 S |N 7-192 LPA |87.5W {C |200 60 60 }O 20 80 1.0A 0.4 1L.0A 20 |E 4.0M/T 2N5069 |S |N 7-192 | LPA }87.5wW }C | 200 80 80 |O } 20] 80 1.04 0.4) 1.0A] 20 JE 4.0M|T 2N5086 S |P 5-55 LNA 310M |A [135 50 50 |O {150 |500 0.1M 0.3 LOM] 150 |E 40M] T 2N5087 S{P 5-55 LNA 310M JA |135 50 50 10 |250 | 800 O.1M 0.3 LOM} 250 /E 40M] T 2N5088 S IN 5-59 LNA 310M {A 1135 35 30 10 1300 1900 O.iM Q.5 LOM] 350 [E 50M|T 2N5089 Ss |N 5-59 LNA 310M JA {135 30 25 |O {400 [1200 0.1M 0.5 10M] 450 JE 50M|T 2N5126 Ss |N AFC 200M |A $125 20 20 |0 20 |350 4M 2.0 10M 15 |E 2N5127 S |N AFC 200M |A |125 20 12 |0 15 }300 2M 0.3 10M 12 JE 2N5128 SN AFA 200M JA }125 15 12 40 35 | 350 50M. 0.25 150M 2N5129 S |N AFA 300M {A |125 15 12 JO 35 |350 50M 0.25 150M 2N5130 S|N AFC 200M |A [125 30 12 10 15 | 250 8M 0.6 10M 12 |E 2N5131 S yjN AFC 200M JA }125 20 15 ]0 30 }500 10M 1.0 10M 25 /E 2N5132 SN AFC 200M JA |125 20 20 [oO 30 | 400 10M 2.0 10M 20 7E 2N5133 S [N AFC 200M {A |125 20 18 JO 60 {1000 1. 0.4 1.0M 50 {Ez 2N5134 S [N HSS 200M |A 1125 20 LO |O 20 4150 LOM 0.2 LOM 2N5135 S }N AFA 300M JA |125 30 25 {0 50 [600 10M 1.0 LOOM 2N5136 |S |N AFA | 220M |A |125 30 20 fO | 20 |400 150M| 0.25 150M 2N5137 S [N AFA 300M {A 125 30 20 |0 20 |400 150M 0.25 150M 2N5138 STP AFC 200M JA |125 30 30 |0 50 | 800 100* 0.3 10M 40 |E 2N5139 Ss |P HSS 200M |A 1125 20 20 [0 40 1. OM 0.15 1.0M 2N5140 Ss |P HSS 200M |A {125 5.0 5.0 JO 20 |140 10M 0.2 LOM 2N5 141 Ss [P HSS 200M 7A 1125 6.90 6.0 | 30 30M a2 LOM 2N5142 Ss }P HSS 300M {A {125 20 20 JO 30 50M 0.5 50M 2N5143 S]P HSS 200M |A [125 20 20 10 30 50M 0.5 50M 2N5190 (1S |N LPA 40W 7c 1150 40 |0 25 100 O.5A 0.6 LOA 4, 0M) T 2N5191 STN LPA 40W {Cc {150 60 |O0 25 100 O.5A 0.6 1.0A 4.0M/T 2N5192 S |N LPA 40w |c 1150 80 [0 25 100 O.5A 0.6 1.0A 4.0M|T 2N5193 SP LPA 40W |C |150 40 }0 25 100 1.5A 0.6 1.5A 4.0M|T 2N5194 5 |P LPA 40W |C }150 60 |0 25 100 1.54 0.6 1.5A 4.0M|T 2N5195 S ];P LPA 40w |C |150 80 |0 25 100 1.54 0.6 1.5A 4,0M|T 3N22 N RFA 85 15 0.96) B 3N34 SIN 125M 30 3N35 S|[N 125M 30 30 }O 251E 3N35A S|[N 125M 30 30 |0 1OJE 3N39 thru Reference Amplifiers, see Table on Page 1-172 3N44 3N45 G|P PMS 75W jC |100 60 35 30 1120 5.0A 0.4 5.0A 30 JE 600K) 3N46 GP PMS 75W JC 7100 80 50 20 | 80 5.0A 0.4) 5.0A 300K] 3N47 G/P PMS 75W |C 100 40 25 30 |120 5.0A 0.4 5.0A 30 JE 500K 3N48 GIP PMS 75w {Cc {100 60 40 20 80 5.0A 0.4 5.04 300K 3N49 GUP PMS 94wW |C 1100 60 35 30 1120 5.0A 0.4 5.0A 30 {E 600K| 3N50 GP PMS 94W 7C |100 80 50 20 80 5.0A 0.4 5.0A 300K) 3N51 GIP PMS 94W 1C {100 40 25 30 |120 5..0A 0.4 5.0A 30 [E 500K 3N38 G iP PMS 94W | C |100 60 40 20 80 5.0A 0.4 5.0A 300K 3N thru Thyristors, see Table on Page 1-154 3N60 3N62 Ss |N CHP 10 Vort = 200 nV 3N63 S |N CHP 10 Vore 100 pV 3N64 S 4N CHP 10 Vogee 50 pv 3N65 S |N CHP Vore 200 pV 3N66 SIN CHP Vogem 100 pV 3N67 SN CHP Voeg= 50 uv 3N68 S|N CHP 10 Vort 200 uv 3N68A S |N 100M ]A |200 10 3N69 S JN CHP 10 off 100 pv 1-1502N4214-3N86 THYRISTOR INDEX (continued) Numerical Index PAGE a Veom/Vrom ty Ver TYPE REPLACEMENT NUMBER A v c mA V 2N42 14 4-36 1.6 TOG 125 0.1 1.5 2N4215 4-36 1.6 150 125 0.1 1.5 2N4216 4-36 1.6 200 125 0.1 .5 IN4316 9.2 100 150 15 1.2 2N4317 9.2 200 150 15 1.2 2N4318 9.2 300 150 15 1.2 2N4319 9.2 400 150 15 1.2 2N4361 70 100 250 5.0 2N4362 70 200 250 5.0 2N4363 70 400 250 5.0 2N4364 70 600 250 5.0 9N4365 70 800 250 5.0 2N4366 70 1000 250 5.0 2N4367 70 1200 250 5:0 2N4368 70 1400 250 5.0 2N4369 70 1600 250 5.0 2N4370 70 1800 250 5.0 2N4371 70 100 250 5:0 2N4372 70 200 250 5.0 2N4373 70 400 250 5.0 2N4374 70 600 250 5.0 2N4375 70 300 250 5.0 2N4376 70 1000 250 5.0 2N4377 70 1200 250 5.0 2N4378 70 1400 250 5.0 2N4379 70 1600 250 5.0 2N4380 70 1800 250 5.0 QNAAG1 4-38 8.0 50 100 30 115 2N4442 4-38 8.0 200 100 30 1.5 2N4443 4-38 8.0 400 100 30 1.5 2N4444 4-38 8.0 600 100 30 1.5 2N5060 4-40 0.8 30 125 0.2 0.8 2N5061 4-40 0.8 60 125 0.2 0.8 2N5062 4-40 0.8 100 125 0.2 0.8 2N5063 4-40 0.8 150 125 0.2 0.8 2N5164 4G? 20 50 100 40 115 2N5165 4-42 20 200 100 40 1.5 2N5166 4-42 20 400 100 40 1.5 2N5167 4-42 20 600 100 40 115 2N5168 4-42 20 50 100 40 115 2N5169 had? 20 200 100 40 1.5 2N5170 4-42 20 400 100 40 1.5 QN5171 4-42 20 600 100 40 1.5 3N58 0.064 40 150 0.001 0.65 3N59 0.064 40 150 0.001 0.65 3N60 0.064 40 150 0.001 0.65 3N80 0.127 40 150 0.001 0.65 3N8L 0.127 65 150 0.001 0.65 3N82 0.127 100 150 0.001 0.65 3N83 0.032 70 125 9.15 0.80 3N84 0.111 40 125 0.01 0.65 3N85 0.111 100 125 0.01 0.65 3N86 0.127 65 150 0.001 0.65 1-162MMAR M DD MD DD A WDWw ww) Thyristors THYRISTOR PRODUCTS THYRISTOR QUICK SELECTIOR 800 mA 1.6 AMP 2.0 AMP 8.0 AMP THYRISTORS 9 SILICON : i eH, . CONTROLLED ate a ey al RECTIFIERS an ey | | 4 ip r je (ak | Plastic Plastic J Case 85 Case 86 Case 87 Case 88 Case 29(10)| Case 31A Case 63 Case 90 Case 85L | caseser | cases7_ | case sar (Leads) (Leads) (Leads) (Leads) V 2N2322 2N4151 2N4167 MCR2604-1 | MCR2605-1 25 MCR846-1 2N4212# anaiso | angi7s| 2na1a3 2naig1 30V 2N5060# - -- _ _ 2N1595 2N4152 2N4168 MCR2604.2 | MCR2605-2 50V _ 2N2323# | MCRS46-2 2N4441 2N42134 2N4160 2N4176 2N4184 2N4192 60V 2N5061 #4 -- _ _ 2N1596 2N4153 2N4169 | MCR2604-3 | MCR2605-3 100V 2N5062# 2N2324# | MCR846-3 _ 2N4214# 2N41619 | 2N4177 2N41859 | 2n4193 2N2325# 150V 2N5063# -- 2N4215# 200 2N1597 2N4154 2N4170 MCR2604.4 | MCR2605-4 2N2326# | MCR846-4 2N4442 BLOCKING 2N4216# 2N4162 | 2N4178 2n4186 2n4194 (DC OR PEAK) VOLTS 250V _ -- _ _ 2N4155 2N4171 MCR2604-5 | MCR2605-5 _- 2N1598 _ - 300V 2N4163 2N4179 2N4187 2N4195 2N4156 2N4172 MCR2604-6 MCR2605-6 400V 2N1599 _ 2N4443 2N41640 2N4180 2nN4188 2n4196 2N4157 2N4173 MCR2604.-7 | MCR2605-7 500V ~ ~ ~ ~ 2naies | 2n4181] 2n4189 2n4197 2N4158 2N4174 MCR2604-8 | MCR2605-8 _ ~ 2 600V NaaMA 2N4166 2N4182 2N4190 2Nn4198 700V _ _ 800V _ _ _ _ _ _ _ *Reverse polarity available (add suffix R": i.e. 2N5164R) 4-4 **Formerly MCR2818 and MCR2918, -2, ~4, -6, -8 respectively. #Sensitive gate devicesSilicon Controlled Rectifiers 2N5060 thru 2n5063 Vow = 30-150 V PNPN plastic thyristors (silicon controlled recti- fiers) designed for operation in low voltage mA/uA switching and detection circuits. /\>A CASE 29(10) c (TO- 92) MAXIMUM RATINGS (Ty = 125C unless otherwise noted) Rating Symbol Value Unit Peak Reverse Blocking Voltage VRxM(rep) Volt (Note 1) 2N5060 30 2N5061 60 2N5062 100 2N5063 150 Forward Current RMS I 0.8 Amp Peak Surge Current I . 6.0 Amp (One Cycle, 60 Hz) FM(surge) No Repetition until Thermal Equilibrium is Restored Peak Gate Power - Forward Porm 0.1 Watt Average Gate Power - Forward PGF(AV) 0.01 Watt Peak Gate Current - Forward lorm 1.0 Amp (300 zs, 120 PPS) Peak Gate Voltage - Forward Vorm 5.0 Volt Re 5.0 everse Vorm Operating Junction Temperature Ty -65 to +125 C Range Storage Temperature Range Tetg -65 to +150 C Lead Solder Temperature +230 C (> 1/16" from case, 10 sec. max) 4-402N5060 thru 2N5063 (continued) Silicon Controlled Rectifiers ELECTRICAL CHARACTERISTICS (To = 25C unless otherwise noted, Ra, = 1000 ohms) Characteristic Symbol Min Max Unit Peak Forward Blocking Voltage (Note 1) Vexm Volt 2N5060 30* - 2N5061 60* - 2N5062 100* - 2N5063 150* - Peak Reverse Blocking Current IRxm LA - % * (Rated VRxM Ty = 125C) - 50 Peak Forward Blocking Current lexm HA = - 50* (Rated Vive T, = 125C) Forward "On" Voltage Ve Volt (Ip = 1.0 A Peak) - 1.7* Gate Trigger Current (Note 2) Ion pAdc (Anode Voltage = 7.0 V, Ry = 100 ohms) (Te = 25C) 200 (Te = -65C) - 350 * Gate Trigger Voltage Vor Volt node Voltage = 7. ; R, = 100 ohms, = 25 - 0. {Anode Vol T.0V L 101 Te C) 8 (Anode Voltage = 7.0 V, Ry = 100 ohms, To = ~65C) - 1.2* {Anode Voltage = Rated Vexm Ry = 100 ohms, Ty = 125C) 0. 1* - Holding Current (Anode Voltage = 7.0 V) Ty, = 25C lax 5.0 mA Tp = -65C 10* Turn-On Time on Circuit dependent, Turn-Off Time t consult manufacturer off *JEDEC Registered Values Notes: 1. V and V RXM FXM a continuous de basis without incurring damage. 2. R can be applied for all types on CK current is not included in measurement. FIGURE 1 CURRENT DERATING S a= CONDUCTION ae ANGLE a & 2544 CASE MEASUREMENT BE POINT ~ CENTER OF g 4 FLAT N 4 Zi S Be xe 36 . 60 180 BE 0.1 #02 0.3 04 0.5 0.6 07 0.8 letavy AVERAGE FORWARD CURRENT (AMP) Thyristor devices shall not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. Thyristor devices shall not have a positive bias applied to the gate concurrently with a negative potential applied to the anode. FIGURE 2 POWER DISSIPATION _ e mld Be, 2 sae RS Ya = CONDUCTION ANGLE a1. ox # Bi 0.8 >B 290.6 =o. = m 0.2 1 0.7 0.8 Tay) AVERAGE FORWARD CURRENT (AMP) 4-41