Switching and General Purpose Transistors anI711 For Specifications, See 2N718A Data Sheet 2N1893 (siticon) ete Ose ~ V 2N2405 f; = 50 MHz (JAN 2N1893 Available) NPN silicon annular transistors designed for medium- power amplifier and switching applications. MAXIMUM RATINGS Rating Symbol | 2N1893 | 2N2405 | unit Collector-Emitter Voltage Voro 80 90 Vde Collector-Emitter Voltage VoER 100 140 Vde Collector-Base Voltage Yon 120 Vde Emitter- Base Voltage Yep 7.0 Vde Collector Current I, 0.5 1.0 Adc Total Dr issi i t = 25% - . Collector connected otal Device Dissipation @ T, 25C Py 0.8 1.0 watt Derate above 25C 4.57 5.71 mwec to case - Total Device Dissipation @ Te = 25C Py 3.0 5.0 Watts Derate above 25C 17,2 28.6 mw/C Operating and Storage Junction Temperature Range Ts. Tote -65 to +200 C (TO-5) THERMAL CHARACTERISTICS Characteristic Symbol 2N1893 | 2N2405 | unit Thermal Resistance. Junction to Case 930 58.3 35 C/W Thermal Resistance, Junction to Ambient oR 219 175 C/W ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage* BV eye) Vde (Ig = 30 mAdc, I, = 9) 2N1893 CEO(sus) 80 - Mg = 100 mAdc, Ihe 0) 2N2405 90 - Collector-Emitter Sustaining Voltage BYCER(sus) Vde (I, = 100 mAde, Ryg = 10 ohms) 2N1893 - 100 - 2N2405 140 = Collector-Base Breakdown Voltage BVoro Vdc (L, = 100 uAde, I, = 0) 120 - Cc E Emitter-Base Breakdown Voltage BVERO Vde a, = 100 wAdc, I, = 0) 7.0 - Cc Collector Cutoff Current logo LAdc = - 0.01 Voz 90 Vac, I; 0) (V, = 90 Vde, I, = 0, T, = 150C) 2N1893 - 15 cB E A 2N2405 - 10 Emitter Cutoff Current leBo pAdc (Vor = 5.0 Vdc, Io = 0) - 0.01 8-98