AUIRGP4062D
AUIRGP4062D-E
G C E
Gate Collector Emitter
AUTOMOTIVE GRADE
E
G
n-channel
C
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRGP4062D TO-247AC Tube 25 AUIRGP4062D
AUIRGP4062D-E TO-247AD Tube 25 AUIRGP4062D-E
1 2017-08-25
*Qualification standards can be found at www.infineon.com
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Thermal Resistance
Parameter Min. Typ. Max.
Units
RJC (IGBT) Thermal Resistance Junction-to-Case (each IGBT) TO-247 ––– ––– 0.65
°C/W
RJC (Diode) Thermal Resistance Junction-to-Case (each Diode) TO-247 ––– ––– 1.62
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) TO-247 ––– 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) TO-247 ––– 40 –––
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
5µs SCSOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified *
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
VCES = 600V
IC = 24A, TC = 100°C
tSC 5µs, TJ(max) = 175°C
VCE(on) typ. = 1.60V
TO-247AD
AUIRGP4062D-E
G C E
C
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 48
A
IC @ TC = 100°C Continuous Collector Current 24
ICM Pulse Collector Current VGE =15V 72
ILM Clamped Inductive Load Current VGE =20V 96
IF @ TC = 25°C Diode Continuous Forward Current 48
IF @ TC = 100°C Diode Continuous Forward Current 24
IFSM Maximum Repetitive Forward Current 96
VGE ±20 V
±30
PD @ TC = 25°C Maximum Power Dissipation 250 W
PD @ TC = 100°C Maximum Power Dissipation 125
TJ Operating Junction and -55 to +175
°C
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
TO-247AC
AUIRGP4062D
G C E
C
AUIRGP4062D/AUIRGP4062D-E
2 2017-08-25
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.
Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V
VGE = 0V, IC = 100µA CT6
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C
VGE = 0V, IC = 1mA (25°C-175°C)
VCE(on) Collector-to-Emitter Saturation Voltage
— 1.60 1.95
V
IC = 24A, VGE = 15V, TJ = 25°C 5,6,7
9,10,11
— 2.03 — IC = 24A, VGE = 15V, TJ = 150°C
— 2.04 — IC = 24A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V
IC = 700µA 9,10,
11,12
VGE(th)/TJ Threshold Voltage temp. coefficient — -18 — mV/°C
VCE = VGE, IC = 1.0mA (25°C-175°C)
gfe Forward Transconductance — 17 — S
VCE = 50V, IC = 24A,PW = 80µs
ICES
Collector-to-Emitter Leakage Current — 2.0 25 VGE = 0V, VCE = 600V
— 775 — VGE = 0V, VCE = 600V,TJ = 175°C
VFM Diode Forward Voltage Drop — 1.80 2.6
V IF = 24A 8
— 1.28 IF = 24A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA
VGE = ±20V, VCE = 0V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref. Fig.
Qg Total Gate Charge (turn-on) — 50 75
nC
IC = 24A 24
Qge Gate-to-Emitter Charge (turn-on) — 13 20 VGE = 15V CT1
Qgc Gate-to-Collector Charge (turn-on) — 21 31 VCC = 400V
Eon Turn-On Switching Loss — 115 201
J
Eoff Turn-Off Switching Loss — 600 700
CT4
Etotal Total Switching Loss — 715 901 IC = 24A, VCC = 400V,
td(on) Turn-On delay time — 41 53
ns
VGE = +15V,TJ = 25°C
tr Rise time — 22 31 RG = 10, L = 200H,LS = 150nH ,
td(off) Turn-Off delay time — 104 115 Energy losses include tail & diode
tf Fall time — 29 41 reverse recovery
Eon Turn-On Switching Loss — 420 —
J
13,15,
CT4
WF1,WF2
Eoff Turn-Off Switching Loss — 840 —
Etotal Total Switching Loss — 1260 — IC = 24A, VCC = 400V,
td(on) Turn-On delay time — 40 —
ns
VGE = +15V,TJ = 175°C 14,16
CT4
WF1
WF2
tr Rise time — 24 — RG = 10, L = 200H, LS = 150nH
td(off) Turn-Off delay time — 125 — Energy losses include tail & diode
tf Fall time — 39 — reverse recovery
Cies Input Capacitance — 1490 —
pF
VGE = 0V
Coes Output Capacitance — 129 — VCC = 30V 23
Cres Reverse Transfer Capacitance — 45 — f = 1.0Mhz
TJ = 175°C, IC = 96A 4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp = 600V CT2
Rg = 10, VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — —
s VCC = 400V, Vp = 600V
Rg = 10, VGE = +15V to 0V
22,CT3
WF4
Erec Reverse Recovery Energy of the Diode — 624 — J TJ = 175°C 17,18,19,
trr Diode Reverse Recovery Time — 89 — ns
VCC = 400V,IF = 24A,VGE = 15V, 20,21
Irr Peak Reverse Recovery Current — 37 — A RG = 10, L = 200H,LS = 150nH WF3
Notes:
V
CC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10.
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
AUIRGP4062D/AUIRGP4062D-E
3 2017-08-25
020 40 60 80 100 120 140 160 180
TC (°C)
0
5
10
15
20
25
30
35
40
45
50
IC (A)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
0 20406080100120140160180
TC (°C)
0
50
100
150
200
250
300
Ptot (W)
10 100 1000
VCE (V)
1
10
100
1000
IC (A)
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
Fig. 2 - Power Dissipation vs.
Case Temperature
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
1000
IC (A)
1msec
10µsec
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
012345678
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
012345678
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
AUIRGP4062D/AUIRGP4062D-E
4 2017-08-25
0 5 10 15
VGE (V)
0
20
40
60
80
100
120
ICE (A)
TJ = 25°C
TJ = 175°C
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80µs
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
012345678
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.01.02.03.0
VF (V)
0
20
40
60
80
100
120
IF (A)
-40°c
25°C
175°C
AUIRGP4062D/AUIRGP4062D-E
5 2017-08-25
010 20 30 40 50 60
IF (A)
10
15
20
25
30
35
40
IRR (A)
RG = 10
RG = 22
RG = 47
RG = 100
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
025 50 75 100 125
RG (
5
10
15
20
25
30
35
40
45
IRR (A)
0 25 50 75 100 125
Rg ()
0
200
400
600
800
1000
1200
1400
1600
Energy (µJ)
EOFF
EON
0 102030405060
IC (A)
0
200
400
600
800
1000
1200
1400
1600
1800
Energy (µJ)
EOFF
EON
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 18 Typ. Diode IRR vs. RG
TJ = 175°C
025 50 75 100 125
RG ()
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
10 20 30 40 50
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
AUIRGP4062D/AUIRGP4062D-E
6 2017-08-25
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
0 5 10 15 20 25 30 35 40 45 50 55
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES
= 300V
VCES
= 400V
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 24A; L = 600μH
010 20 30 40 50 60
IF (A)
0
200
400
600
800
1000
Energy (µJ)
RG = 10
RG = 22
RG = 47
RG = 100
8 1012141618
VGE (V)
4
6
8
10
12
14
16
Time (µs)
40
80
120
160
200
240
280
Current (A)
0500 1000 1500
diF /dt (A/µs)
5
10
15
20
25
30
35
40
45
IRR (A)
0 500 1000 1500
diF /dt (A/µs)
500
1000
1500
2000
2500
3000
3500
4000
QRR (nC)
10
22
100
47
24A
48A
12A
AUIRGP4062D/AUIRGP4062D-E
7 2017-08-25
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
R
1
R
1
R
2
R
2
C
C
Ci= iRi
Ci= iRi
Ri (°C/W) i (sec)
0.2782 0.000311
0.3715 0.006347
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
C
Ci= iRi
Ci= iRi
Ri (°C/W) i (sec)
0.693 0.001222
0.621 0.005254
0.307 0.038140
AUIRGP4062D/AUIRGP4062D-E
8 2017-08-25
L
Rg
80 V
DUT VCC
+
-
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.6 - BVCES Filter Circuit
AUIRGP4062D/AUIRGP4062D-E
9 2017-08-25
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
-100
0
100
200
300
400
500
600
-0.40 0.10 0.60
Time(µs)
V
CE
(V)
-5
0
5
10
15
20
25
30
E
OFF
Loss
5% V
CE
5% I
CE
90% I
CE
tf
V
CE
I
CE
-100
0
100
200
300
400
500
600
11.70 11.90 12.10 12.30
Time (µs)
V
CE
(V)
-10
0
10
20
30
40
50
60
E
ON
ICE
CURREN
90% test
10% ICE
5% VCE
tr
VCE
CURR
-50
-40
-30
-20
-10
0
10
20
30
-0.15 -0.05 0.05 0.15 0.25
time (µS)
I
RR
(A)
Peak
I
RR
Q
RR
t
RR
10%
Pea k
I
RR
-100
0
100
200
300
400
500
600
-5.00 0.00 5.00 10.00
time (µS)
V
CE
(V)
-50
0
50
100
150
200
250
300
I
CE
(A)
V
CE
I
CE
AUIRGP4062D/AUIRGP4062D-E
10 2017-08-25
TO-247AC Package Outline
(Dimensions are shown in millimeters (inches))
TO-247AC Part Marking Information
YWWA
XX XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
AUIRGP4062D
Lot Code
Part Number
IR Logo
TO-247AD package is not recommended for Surface Mount Application.
AUIRGP4062D/AUIRGP4062D-E
11 2017-08-25
TO-247AD Package Outline
(Dimensions are shown in millimeters (inches))
TO-247AD Part Marking Information
YWWA
XX XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
AUIRGP4062D-E
Lot Code
Part Number
IR Logo
TO-247AD package is not recommended for Surface Mount Application.
AUIRGP4062D/AUIRGP4062D-E
12 2017-08-25
† Highest passing voltage.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
This part number(s) passed Automotive qualification. Infineon’s Industrial
and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
TO-247AC N/A
TO-247AD
ESD
Machine Model Class M4(+/‐400V)†
AEC-Q101-002
Class H2(+/‐2000V)†
AEC-Q101-001
Charged Device Model Class C5 (+/‐1000V)†
AEC-Q101-005
RoHS Compliant Yes
Human Body Model
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
8/24/2017
Updated datasheet with corporate template
Corrected package outline –TO-247AD on page 11
Corrected part marking on pages 10,11
