SMBTA92/MMBTA92 PNP Silicon High-Voltage Transistors * Suitable for video output stages in TV sets 2 3 and switching power supplies 1 * High breakdown voltage * Low collector-emitter saturation voltage * Complementary types: SMBTA42 / MMBT42 (NPN) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking SMBTA92/MMBTA92 s2D Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 Collector current IC 500 Base current IB 100 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg Thermal Resistance Parameter Symbol Value RthJS 210 Value Unit V mA TS 74 C Junction - soldering point1) -65 ... 150 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-12-19 SMBTA92/MMBTA92 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 300 Unit V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 300 - - V(BR)EBO 5 - - IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 100 A, IC = 0 Collector-base cutoff current A ICBO VCB = 200 V, IE = 0 - - 0.1 VCB = 200 V, IE = 0 , TA = 150 C - - 20 - - 100 Emitter-base cutoff current IEBO nA VEB = 5 V, IC = 0 DC current gain1) - hFE IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - IC = 30 mA, VCE = 10 V 25 - - VCEsat - - 0.5 VBEsat - - 0.9 50 - - MHz - - 6 pF Collector-emitter saturation voltage1) V IC = 20 mA, IB = 2 mA Base emitter saturation voltage1) IC = 20 mA, IB = 2 mA AC Characteristics fT Transition frequency IC = 20 MHz, VCE = 10 V, f = 100 MHz Ccb Collector-base capacitance VCB = 20 V, f = 1 MHz 1Pulse test: t < 300s; D < 2% 2 2011-12-19 SMBTA92/MMBTA92 DC current gain hFE = (IC) VCE = 10 V 10 3 Operating range IC = f(VCEO) TA = 25C, D = 0 SMBTA 92/93 10 3 EHP00883 mA 5 10 s h FE 10 IC 10 2 2 5 100 s 10 1 1 ms 2 10 DC 1 10 0 5 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 10 -1 0 10 3 10 1 10 2 V Collector cutoff current ICBO = (TA) VCBO = 200 V VCE = 10V 10 3 SMBTA 92/93 EHP00882 10 4 mA CB0 C SMBTA 92/93 EHP00881 nA max 10 3 10 3 VCE C Collector current IC = (VBE ) 10 2 5 10 2 10 1 5 10 1 typ 10 0 10 0 5 10 -1 10 -1 0 0.5 V 1.0 1.5 0 50 100 C 150 TA V BE 3 2011-12-19 SMBTA92/MMBTA92 Transition frequency fT = (IC) VCE = 10 V 10 3 MHz SMBTA 92/93 Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) EHP00878 90 pF fT CCB(CEB ) 5 70 60 50 10 2 40 CEB 5 30 20 10 CCB 10 1 10 0 5 10 1 5 10 2 mA 5 0 0 10 3 4 8 12 16 Permissible Pulse Load RthJS = (tp) 10 3 400 mW K/W 320 10 2 RthJS 280 Ptot 22 VCB(VEB C Total power dissipation P tot = (TS) V 240 10 1 200 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 160 120 10 0 80 40 0 0 15 30 45 60 75 90 105 120 C TS 10 -1 -6 10 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2011-12-19 SMBTA92/MMBTA92 Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 SMBTA 92/93 Ptot max 5 Ptot DC EHP00879 tp D= T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-12-19 Package SOT23 SMBTA92/MMBTA92 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 6 2011-12-19 SMBTA92/MMBTA92 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-12-19