© 2011 IXYS All rights reserved 1 - 6
20110119a
MIO 1200-33E10
IXYS reserves the right to change limits, test conditions and dimensions.
IC80 = 1200 A
VCES = 3300 V
VCE(sat) typ. = 3.1 V
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
Symbol Conditions Maximum Ratings
VCES VGE = 0 V 3300 V
VGES ± 20 V
IC80 TC = 80°C 1200 A
ICM tp = 1 ms; TC = 80°C 2400 A
tSC VCC = 2500 V; VCEM CHIP = < 3300 V; 10 µs
VGE < 15 V; TVJ < 125°C
IGBT
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 1200 A; VGE = 15 V; TVJ = 25°C 3.1 V
TVJ = 125°C 3.8 V
VGE(th) IC = 240 mA; VCE = VGE 68V
ICES VCE = 3300 V; VGE = 0 V; TVJ = 125°C 120 mA
IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C 500 nA
td(on) 400 ns
tr200 ns
td(off) 1070 ns
tf440 ns
Eon 1890 mJ
Eoff 1950 mJ
Cies 187 nF
Coes VCE = 25 V; VGE = 0 V; f = 1 MHz 11.6 nF
Cres 2.2 nF
Qge IC = 1200 A; VCE = 1800 V; VGE = ± 15 V 12.1 µC
RthJC 0.0085 K/W
Collector emitter saturation voltage is given at chip level
Inductive load; TVJ = 125°C;
VGE = ±15 V; VCC = 1800 V;
IC = 1200 A; RG = 1.5 Ω;
Lσ = 100 nH
CCC
C'
G
E'
EEE
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
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© 2011 IXYS All rights reserved 2 - 6
20110119a
MIO 1200-33E10
Diode
Symbol Conditions Maximum Ratings
IF80 TC = 80°C 1200 A
IFSM VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave 11000 A
Symbol Conditions Characteristic Values
min. typ. max.
VF IF = 1200 A; TVJ = 25°C 2.30 V
TVJ = 125°C 2.35 V
IRM 1350 A
trr 1450 ns
QRR 1280 µC
Erec 1530 mJ
RthJC 0.017 K/W
Forward voltage is given at chip level
VCC = 1800 V; IC = 1200 A;
VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C
Inductive load; Lσ = 100nH
Module
Symbol Conditions Maximum Ratings
TJM max junction temperature +150 °C
TVJ Operating temperature -40...+125 °C
Tstg Storage temperature -40...+125 °C
VISOL 50 Hz 6000 V~
MdMounting torque Base-heatsink, M6 screws 4 - 6 Nm
Main terminals, M8 screws 8 - 10 Nm
Symbol Conditions Characteristic Values
min. typ. max.
dAClearance distance terminal to base 23 mm
terminal to terminal 19 mm
dSSurface creepage terminal to base 33 mm
distance terminal to terminal 33 mm
Lσσ
σσ
σModule stray inductance, C to E terminal 10 nH
Rterm-chip *)Resistance terminal to chip 0.085 mΩ
RthCH per module; λ grease = 1 W/m·K0.006 K/W
Weight 1500 g
*) V = VCE(sat) + Rterm-chip · IC resp. V = VF + Rterm-chip · IF
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© 2011 IXYS All rights reserved 3 - 6
20110119a
MIO 1200-33E10
Fig. 3 Typical onstate characteristics, chip level Fig. 4 Typical transfer characteristics, chip level
Fig. 1 Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level
Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs
collector-emitter voltage
0
400
800
1200
1600
2000
2400
012345
V
CE
[V]
I
C
[A]
17 V
9 V
11 V
13 V
15 V
0
400
800
1200
1600
2000
2400
01234567
V
F
[V]
I
C
[A]
T
vj
= 125 °C
17 V
15 V
13 V
11 V
9 V
0
400
800
1200
1600
2000
2400
0123456
V
CE
[V]
I
C
[A]
25 °C
125 °C
V
GE
= 15 V
0
400
800
1200
1600
2000
2400
012345678910111213
V
GE
[V]
I
C
[A]
125°C
25°C
V
CE
= 20V
0
5
10
15
20
0123456789101112
Q
g
[µC]
V
GE
[V]
V
CC
= 1800
V
CC
= 2500
I
C
= 1200 A
T
vj
= 25 °C
1
10
100
1000
0 5 10 15 20 25 30 35
V
CE
[V]
C [nF]
V
GE
= 0 V
f
OSC
= 1 MHz
V
OSC
= 50 mV
C
ies
C
oes
C
res
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© 2011 IXYS All rights reserved 4 - 6
20110119a
MIO 1200-33E10
Fig. 12 Typical diode forward characteristics,
chip level
Fig. 9 Typical switching times vs collector current Fig. 10 Typical switching times vs gate resistor
Fig. 11 Turn-off safe operating area (RBSOA)
Fig. 7 Typical switching energies per pulse
vs collector current
Fig. 8 Typical switching energies per pulse
vs gate resistor
0
1
2
3
4
5
6
0 500 1000 1500 2000 2500
I
C
[A]
E
on
, E
off
[J]
E
on
E
off
V
CC
= 1800 V
R
G
= 1.5 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
0
1
2
3
4
5
6
7
8
9
0 5 10 15 20
RG [ohm]
Eon, Eoff [J]
Eon
Eoff
VCC = 1800 V
IC = 1200 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
0.01
0.1
1
10
0 500 1000 1500 2000 2500
IC [A]
td(on), tr, td(off), tf [µs]
td(on)
td(off)
tr
tf
VCC = 1800 V
RG = 1.5 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH 0.1
1
10
0 5 10 15 20
RG [ohm]
td(on), tr, td(off), tf [µs]
td(on)
tf
tr
td(off)
VCC = 1800 V
IC = 1200 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
0
0.5
1
1.5
2
2.5
0 500 1000 1500 2000 2500 3000 3500
VCE [V]
ICpulse / IC
IC, Chip
IC, Module
VCC ≤ 2500 V
0
400
800
1200
1600
2000
2400
01234
V
F
[V]
I
F
[A]
125°C
25°C
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© 2011 IXYS All rights reserved 5 - 6
20110119a
MIO 1200-33E10
Fig. 14 Typical reverse recovery characteristics
vs gate resistor
Fig. 15 Thermal impedance vs time
Fig. 13 Typical reverse recovery characteristics
vs forward current
0
200
400
600
800
1000
1200
1400
1600
1800
0 5 10 15 20
R
G
[ohm]
E
rec
[mJ], I
RM
[A], Q
RR
[µC]
E
rec
I
RM
Q
RR
V
CC
= 1800 V
I
C
= 1200 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t [s]
Z
th(j-h)
[K/W] IGBT, DIODE
Z
th(j-c)
IGBT
Z
th(j-c)
Diode
)e-(1R = (t)Z
n
1i
t/-
iJCth
i
∑
=
τ
i 1 2 3 4
Ri(K/kW) 5.50 1.53 0.621 0.646
IGBT
τ
i
(ms) 193 31.2 8.0 1.48
Ri(K/kW) 11.2 3.73 1.30 0.42
DIODE
τ
i
(ms) 189 24.5 2.69 2.36
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
500
1000
1500
2000
2500
3000
I
F
[A]
E
rec
[mJ], I
RM
[A], Q
RR
[µC]
Q
RR
I
RM
E
rec
V
CC
= 1800 V
R
G
= 1.5 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
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© 2011 IXYS All rights reserved 6 - 6
20110119a
MIO 1200-33E10
Outline drawing
''
Note: all dimensions are shown in mm
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