Absolute Maximum Ratings Pre-Irradiation
Symbol Parameter Value Units
ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current -6.7
A
ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current -4.3
IDM @ TC = 25°C Pulsed Drain Current -26.8
PD @ TC = 25°C Maximum Power Dissipation 25 W
Linear Derating Factor 0.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 240 mJ
IAR Avalanche Current -6.7
A
EAR Repetitive Avalanche Energy 2.5 mJ
dv/dt Peak Diode Recovery dv/dt -17
V/ns
TJ Operating Junction and
°C
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s)
Weight 0.98 (Typical) g
-55 to + 150
TO-39
IRHF597130
1 2019-02-25
Product Summary
Part Number Radiation Level RDS(on) I
D
IRHF597130 100 kRads(Si) 0.24 -6.7A
IRHF593130 300 kRads(Si) 0.24 -6.7A
100V, P-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE TO-205AF (TO-39)
PD-96963C
For Footnotes, refer to the page 2.
R
5 TECHNOLOGY
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Electrically Isolated
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 1B per MIL-STD-750,
Method 1020
Description
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for both Total Dose and Single Event
Effect (SEE) with useful performance up to LET of 80 (MeV/
(mg/cm2). The combination of low RDS(on) and low gate
charge reduces the power losses in switching applications
such as DC-DC converters and motor controllers. These
devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching and
temperature stability of electrical parameters.
International Rectifier HiRel Products, Inc.
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Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
RJC Junction-to-Case ––– ––– 5.0 °C/W
RJA Junction-to-Ambiet (Typical Socket Mount) ––– ––– 175 °C/W
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.13 ––– V/°C Reference to 25°C, ID = -1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.24 VGS = -12V, ID2 = -4.3A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -1.0mA
Gfs Forward Transconductance 4.3 ––– ––– S VDS = -15V, ID2 = -4.3A
IDSS Zero Gate Voltage Drain Current ––– ––– -10 µA VDS = -80V, VGS = 0V
––– ––– -25 VDS = -80V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– -100 nA VGS = -20V
Gate-to-Source Leakage Reverse ––– ––– 100 VGS = 20V
QG Total Gate Charge ––– ––– 40
nC
ID1 = -6.7A
QGS Gate-to-Source Charge ––– ––– 16 VDS = -50V
QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 11 VGS = -12V
td(on) Turn-On Delay Time ––– ––– 25
ns
VDD = -50V
tr Rise Time ––– ––– 50 ID1 = -6.7A
td(off) Turn-Off Delay Time ––– ––– 45 RG = 7.5
tf Fall Time ––– ––– 125 VGS = -12V
Ls +LD Total Inductance ––– 7.0 ––– nH
Measured from Drain lead (6mm / 0.25in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire inter-
nally bonded from Source pin to Drain pin
Ciss Input Capacitance ––– 1250 ––– VGS = 0V
Coss Output Capacitance ––– 318 ––– VDS = -25V
Crss Reverse Transfer Capacitance ––– 28 ––– ƒ = 1.0MHz
RG Internal Gate Resistance 8.0 ƒ = 1.0MHz, open drain
pF
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– -6.7
ISM Pulsed Source Current (Body Diode) ––– ––– -26.8
VSD Diode Forward Voltage ––– ––– -5.0 V TJ =25°C,IS = -6.7A, VGS= 0V
trr Reverse Recovery Time ––– ––– 150 ns TJ=25°C, IF= -6.7A, VDD ≤-50V
Qrr Reverse Recovery Charge ––– ––– 408 nC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25°C, L = 10.6mH, Peak IL = -6.7A, VGS = -12V
ISD -6.7A, di/dt -530A/µs, VDD -100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
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IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Fig a. Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm2))
Energy
(MeV)
Range
(µm)
VDS (V)
@ VGS = 0V @ VGS =5V @ VGS =10V @ VGS =20V
38 ± 5% 270 ± 7.5% 35 ± 7.5% -100 -100 -100 -100
61 ± 5% 330 ± 7.5% 30 ± 7.5% -100 -100 -100 -25
84 ± 5% 350 ± 7.5% 28 ± 7.5% -100 -100 -100 –––
@ VGS =15V
-100
-100
-30
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol Parameter 100 kRads (Si)1
300 kRads (Si) 2
Units Test Conditions
Min. Max. Min. Max.
BVDSS Drain-to-Source Breakdown Voltage -100 ––– -100 ––– V VGS = 0V, ID = -1.0mA
VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 V VDS = VGS, ID = -1.0mA
IGSS Gate-to-Source Leakage Forward ––– -100 ––– -100 nA VGS = -20V
IGSS Gate-to-Source Leakage Reverse ––– 100 ––– 100 nA VGS = 20V
IDSS Zero Gate Voltage Drain Current ––– -10 ––– -10 µA VDS = -80V, VGS = 0V
RDS(on) Static Drain-to-Source
On-State Resistance (TO-3) ––– 0.205 ––– 0.205 VGS = -12V, ID2 = -4.3A
VSD Diode Forward Voltage ––– -5.0 ––– -5.0 V VGS = 0V, IS= -6.7A
RDS(on) Static Drain-to-Source
On-State Resistance (TO-39) ––– 0.24 ––– 0.24 VGS = -12V, ID2 = -4.3A
2. Part number IRHF593130
1. Part number IRHF597130
Radiation Characteristics
-120
-100
-80
-60
-40
-20
0
0 5 10 15 20
Bias VDS (V)
Bias VGS (V)
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
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Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
110 100
-VDS, Drain- to- Sour ce Voltage (V)
0
400
800
1200
1600
2000
C, Capacitance (pF)
VGS = 0V, f = 1 MHz
Ciss
= Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge (nC)
0
4
8
12
16
20
-VGS, Gate-to-Source Voltage (V)
VDS= -80V
VDS= -50V
VDS= -20V
ID = -6.7A
FOR TEST CIRCUIT
SEE FIGURE 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
5678910
-VGS, Gate- to-Source Voltage ( V)
1
10
100
-ID, Drain-to-Source Current (A)
VDS = -25V
60 s PULSE WIDTH
TJ = 150°C
TJ = 25°C
Fig 1. Typical Output Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temper ature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VGS = -12V
ID = -6.7A
0.1 1 10 100
-VDS , Drain- to- Sour ce Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
60 s PULSE WIDTH
Tj = 25°C
VGS
TOP -15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BO T T O M -5. 0V
-5.0V
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
60 s PULSE WIDTH
Tj = 150°C
VGS
TOP -15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
-5.0V
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Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0. 01
0. 1
1
10
0. 00001 0. 0001 0. 001 0. 01 0. 1 1 10
Not es:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJ C C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0. 01
0. 02
0. 05
0. 10
0. 20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
Starting T J , Junction Temperature ( °C)
0
100
200
300
400
500
600
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP -3.0A
-4.2A
BOTTOM -6.7A
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
TC , Case Temper ature (°C)
0
1
2
3
4
5
6
7
-ID, Drain Current (A)
01234567
-VSD , Source-to-Drain Voltage (V)
0.1
1
10
100
-ISD , Reverse Drain Current (A)
VGS = 0V
TJ = 150°C
TJ = 25°C
1 10 100 1000
-VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100s
DC
Fig 8. Maximum Safe Operating Area
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Fig 12a. Unclamped Inductive Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
-12V
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Case Outline and Dimensions - TO-205AF (TO-39)
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
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IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
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the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
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completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
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