PD-96963C IRHF597130 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF (TO-39) 100V, P-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHF597130 100 kRads(Si) 0.24 -6.7A IRHF593130 300 kRads(Si) 0.24 -6.7A TO-39 Description Features IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 80 (MeV/ (mg/cm2). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Electrically Isolated Ceramic Package Light Weight Surface Mount ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Parameter Symbol ID1 @ VGS = -12V, TC = 25C Value Continuous Drain Current -6.7 ID2 @ VGS = -12V, TC = 100C Continuous Drain Current -4.3 Units A IDM @ TC = 25C Pulsed Drain Current -26.8 PD @ TC = 25C Maximum Power Dissipation 25 W Linear Derating Factor 0.2 W/C VGS Gate-to-Source Voltage 20 V EAS Single Pulse Avalanche Energy 240 mJ A IAR Avalanche Current -6.7 EAR Repetitive Avalanche Energy 2.5 dv/dt Peak Diode Recovery dv/dt -17 TJ TSTG Operating Junction and -55 to + 150 Storage Temperature Range Lead Temperature mJ V/ns C 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g For Footnotes, refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2019-02-25 IRHF597130 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Symbol BVDSS BVDSS/TJ RDS(on) VGS(th) Gfs IDSS QG QGS QGD td(on) tr td(off) tf Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time -100 --- --- --- -0.13 --- --- --- 0.24 -2.0 --- -4.0 4.3 --- --- --- --- -10 --- --- -25 --- --- -100 --- --- 100 --- --- 40 --- --- 16 --- --- 11 --- --- 25 --- --- 50 --- --- 45 --- --- 125 Ls +LD Total Inductance --- 7.0 --- Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance --- --- --- 1250 318 28 8.0 --- --- --- IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Min. Typ. Max. Units Zero Gate Voltage Drain Current Test Conditions V V/C VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID2 = -4.3A VDS = VGS, ID = -1.0mA VDS = -15V, ID2 = -4.3A VDS = -80V, VGS = 0V VDS = -80V,VGS = 0V,TJ =125C VGS = -20V VGS = 20V ID1 = -6.7A VDS = -50V VGS = -12V VDD = -50V ID1 = -6.7A RG = 7.5 VGS = -12V V S A nA nC ns Measured from Drain lead (6mm / 0.25in from package) to Source lead (6mm/ 0.25 in from package) with Source wire internally bonded from Source pin to Drain pin nH VGS = 0V VDS = -25V = 1.0MHz = 1.0MHz, open drain pF Source-Drain Diode Ratings and Characteristics Parameter Symbol Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) --- --- -6.7 ISM Pulsed Source Current (Body Diode) --- --- -26.8 VSD Diode Forward Voltage --- --- -5.0 V TJ =25C,IS = -6.7A, VGS= 0V trr Reverse Recovery Time --- --- 150 ns TJ=25C, IF= -6.7A, VDD -50V Qrr Reverse Recovery Charge --- --- 408 nC di/dt = -100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A Thermal Resistance Symbol RJC RJA Parameter Min. Typ. Max. Units Junction-to-Case --- --- 5.0 C/W Junction-to-Ambiet (Typical Socket Mount) --- --- 175 C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25C, L = 10.6mH, Peak IL = -6.7A, VGS = -12V ISD -6.7A, di/dt -530A/s, VDD -100V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A. Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A. 2 International Rectifier HiRel Products, Inc. 2019-02-25 IRHF597130 Pre-Irradiation Radiation Characteristics IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Symbol Parameter 100 kRads (Si)1 300 kRads (Si)2 Min. Max. Min. Max. Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -100 --- -100 --- V VGS = 0V, ID = -1.0mA VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 V VDS = VGS, ID = -1.0mA IGSS Gate-to-Source Leakage Forward --- -100 --- -100 nA VGS = -20V IGSS Gate-to-Source Leakage Reverse --- 100 --- 100 nA VGS = 20V IDSS Zero Gate Voltage Drain Current --- -10 --- -10 A VDS = -80V, VGS = 0V --- 0.205 --- 0.205 VGS = -12V, ID2 = -4.3A --- 0.24 --- 0.24 VGS = -12V, ID2 = -4.3A --- -5.0 --- -5.0 V VGS = 0V, IS= -6.7A Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-39) RDS(on) RDS(on) VSD Diode Forward Voltage 1. Part number IRHF597130 2. Part number IRHF593130 IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area VDS (V) Energy Range (MeV/(mg/cm2)) (MeV) (m) 38 5% 270 7.5% 35 7.5% -100 -100 -100 -100 -100 61 5% 330 7.5% 30 7.5% -100 -100 -100 -100 -25 84 5% 350 7.5% 28 7.5% -100 -100 -100 -30 --- Bias VDS (V) LET @ VGS = 0V @ VGS =5V @ VGS =10V @ VGS =15V @ VGS =20V -120 -100 -80 -60 -40 -20 0 LET=38 5% LET=61 5% LET=84 5% 0 5 10 15 20 Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For Footnotes, refer to the page 2. 3 International Rectifier HiRel Products, Inc. 2019-02-25 IRHF597130 Pre-Irradiation 100 VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V 10 -5.0V 1 60s PULSE WIDTH Tj = 25C 10 0.1 1 10 1 60s PULSE WIDTH Tj = 150C 0.1 100 1 100 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) T J = 25C T J = 150C 10 VDS = -25V 60s PULSE WIDTH ID = -6.7A 2.0 1.5 1.0 VGS = -12V 0.5 1 5 6 7 8 9 -60 -40 -20 10 Fig 3. Typical Transfer Characteristics 2000 -VGS, Gate-to-Source Voltage (V) C iss Coss 800 400 60 80 100 120 140 160 VDS= -80V VDS= -50V 16 VDS= -20V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 40 Fig 4. Normalized On-Resistance Vs. Temperature ID = -6.7A Coss = Cds + Cgd 1200 20 20 VGS = 0V, f = 1 MHz Ciss = C gs + Cgd, C ds SHORTED Crss = C gd 1600 0 T J , Junction Temperature (C) -VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 -VDS , Drain-to-Source Voltage (V) 100 0 1 10 100 -VDS, Drain-to-Source Voltage (V) 0 5 10 15 20 25 30 35 40 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 -5.0V 0.1 0.1 -ID, Drain-to-Source Current (A) VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage International Rectifier HiRel Products, Inc. 2019-02-25 IRHF597130 Pre-Irradiation 100 -I D, Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) 100 T J = 150C 10 T J = 25C 1 VGS = 0V 1 2 3 4 5 100s 10 1ms 1 10ms Tc = 25C Tj = 150C Single Pulse 0.1 0.1 0 OPERATION IN THIS AREA LIMITED BY RDS(on) 6 1 7 10 100 1000 -VDS , Drain-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 600 EAS , Single Pulse Avalanche Energy (mJ) 7 6 -ID, Drain Current (A) DC 5 4 3 2 1 0 ID TOP -3.0A -4.2A BOTTOM -6.7A 500 400 300 200 100 0 25 50 75 100 125 150 25 T C , Case Temperature (C) 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 10. Maximum Avalanche Energy Vs. Drain Current Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJC) 10 D = 0.50 1 0.20 0.10 0.05 PDM 0.02 0.1 0.01 0.00001 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak T J = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 International Rectifier HiRel Products, Inc. 2019-02-25 IRHF597130 Pre-Irradiation Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms -12V Fig 13a. Basic Gate Charge Waveform Fig 14a. Switching Time Test Circuit 6 Fig 13b. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms International Rectifier HiRel Products, Inc. 2019-02-25 IRHF597130 Pre-Irradiation Case Outline and Dimensions - TO-205AF (TO-39) www.infineon.com/irhirel Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555 Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776 San Jose, California 95134, USA Tel: +1 (408) 434-5000 Data and specifications subject to change without notice. 7 International Rectifier HiRel Products, Inc. 2019-02-25 IRHF597130 Pre-Irradiation IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. 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