Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6148A
2SK2623
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81000TS (KOTO) TA-2287 No.6148–1/4
6.5 2.3 0.5
1.55.5
0.8
7.0
1.2
2.5
5.0
0.85 0.5
1.2
0 to 0.2
2.3 2.3
0.612
4
3
Package Dimensions
unit:mm
2083B
[2SK2623]
Features
· Low ON-resistance.
· Low Qg.
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
2092B
[2SK2623]
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3 0.5
123
4
2.3 2.3
2SK2623
No.6148–2/4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
SSD 006V
egatloVecruoS-ot-etaGV
SSG 03±V
)CD(tnerruCniarDI
D5.1A
)esluP(tnerruCniarDI
PD 6A
noitapissiDrewoPelbawollAP
D0.1W
03W
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
egatloVnwodkaerBecruoS-ot-niarDV
SSD)RB( IDV,Am1= SG 0=006V
tnerruCniarDegatloVetaG-oreZI
SSD VSD V,V006= SG 0=0.1Am
tnerruCegakaeLecruoS-ot-etaGI
SSG VSG V,V03±= SD 0=001±An
egatloVffotuCV
)ffo(SG VSD I,V01= DAm1=5.35.5V
ecnattimdArefsnarTdrawroF|sfy|V
SD I,V01= DA8.0=5.00.1S
ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR
)no(SD VSG I,V51= DA8.0=2.45.5 Ω
ecnaticapaCtupnIssiCV
SD zHM1=f,V02=003Fp
ecnaticapaCtuptuOssoCV
SD zHM1=f,V02=09Fp
ecnaticapaCrefsnarTesreveRssrCV
SD zHM1=f,V02=54Fp
egrahCetaGlatoTgQV
SD V,V002= SG I,V01= DA5.1=8Cn
emiTyaleDNO-nruTt
)no(d tiucriCtseTdeificepseeS9sn
emiTesiRt
rtiucriCtseTdeificepseeS21sn
emiTyaleDFFO-nruTt
)ffo(d tiucriCtseTdeificepseeS02sn
emiTllaFt
ftiucriCtseTdeificepseeS71sn
egatloVdrawroFedoiDV
DS ISV,A5.1= SG 0=8.02.1V
RGS
50Ω
P.G 2SK2623
S
G
DVOUT
VDD=200V
VIN ID=0.8A
RL=250Ω
PW=1µs
D.C.≤0.5%
VIN
15V
0V
Marking : K2623
Switching Time Test Circuit
2SK2623
No.6148–3/4
ID
-
VDS ID
-
VGS
RDS(on)
-
VGS
RDS(on)
-
Tc
ID=1.5A
Tc=25°C
VDS=10V
VDS=10V
8V
10V
7V
15V
VGS=6V
Tc=
-
25°C
75°C
Tc=
-
25°C
75°C
25°C
25
°C
VDS=10V
VGS=10V
0.8A
0.5A
4.0
3.5
2.5
1.5
2.0
3.0
0.5
1.0
00 1020304050
3.0
1.5
2.0
2.5
1.0
0.5
00 5 10 2015
7
1.0
7
10
5
3
2
5
3
2
0.1
0.1 23 1.0
75235
5
6
7
8
9
10
4
3
2
1
002468 2014 16 181210
1
2
3
4
5
6
7
8
9
11
10
0
-50 -25 0 25 75 100 125 15050
ID=0.8A,VGS=10V
ID=0.8A,VGS=15V
VGS(off)
-
Tc
VDS=10V
ID=1mV
1
2
3
4
7
5
6
0
-50 0 100 15050
Drain Current, I
D
–A
Drain-to-Source Voltage, V
DS
–V
Drain Current, I
D
–A
Gate-to-Source Voltage, V
GS
–V
Forward Transfer Admittance, | yfs|–S
Drain Current, I
D
–A
|y
fs
|
-
I
D
Gate-to-Source Voltage, V
GS
–V
Static Drain-to-Source
On-State Resistance, R
DS(on)
–Ω
Case Temperature, Tc – ˚C Case Temperature, Tc – ˚C
Cutoff Voltage, VGS(off) –V
Static Drain-to-Source
On-State Resistance, R
DS(on)
–Ω
IF
-
VSD
Tc=75°C
25°C
-
25°C
VDD=200V
VGS=15V VGS=0
2
3
5
7
2
3
5
7
2
3
5
7
23 57 2375
2
3
5
7
0.01
0.001
2
3
5
7
0.1
2
2
3
5
7
1.0
3
5
7
10
2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
1.0
100
1000
1.00.1
SW Time
-
ID
td(on)
tr
td(off)
tf
Switching Time, SW Time – ns
Drain Current, I
D
–A
Forward Current, I
F
–A
Diode Forward Voltage, VSD –V
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2000. Specifications and information herein are subject to
change without notice.
2SK2623
PS No.6148–4/4
A S O
PD
-
Tc
PD
-
Ta
IDP=6A
10µs
100µs
Operation in this area
is limited by RDS(on).
1ms
10ms
DC operation
Ciss,Coss,Crss
-
VDS
Ciss
Coss
Crss
f=1MHz
ID=1.5A
2
3
5
7
100
2
3
5
7
1000
100 5 10 15 20 25 30
2
3
5
7
0.1
0.01
2
3
5
7
1.0
2
3
5
7
10
23 57
101.0 100 23 5723 57 1000
4
0
8
12
16
20
24
28
30
32
0 20 40 60 80 120100 140 160
0.2
0
0.4
0.6
0.8
1.0
1.2
0 20 40 60 80 120100 140 160
Ciss, Coss, Crss – pF
Drain-to-Source Voltage, V
DS
–V
Drain Current,I
D
–A
Drain-to-Source Voltage, V
DS
–V
Allowable Power Dissipation, P
D
–W
Allowable Power Dissipation, P
D
–W
Ambient Temperature, Ta – ˚C Case Temperature, Tc – ˚C
Tc=25°C
Single pulse
