ON Semiconductor 1 DRAIN JFETs Switching MPF4392 MPF4393 3 GATE N-Channel - Depletion ON Semiconductors Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc Gate-Source Voltage VGS 30 Vdc Forward Gate Current IG(f) 50 mAdc PD 350 2.8 mW mW/C Tchannel, Tstg -65 to +150 C Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Channel Temperature Range 1 2 3 CASE 29-11, STYLE 5 TO-92 (TO-226AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS 30 - - Vdc - - - - 1.0 0.2 nAdc Adc - - - - 1.0 0.1 nAdc Adc -2.0 -0.5 - - -5.0 -3.0 25 5.0 - - 75 30 - - - - 0.4 0.4 - - - - 60 100 - - 17 12 - - OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) IGSS Drain-Cutoff Current (VDS = 15 Vdc, VGS = 12 Vdc) (VDS = 15 Vdc, VGS = 12 Vdc, TA = 100C) ID(off) Gate Source Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS MPF4392 MPF4393 Vdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) Drain-Source On-Voltage (ID = 6.0 mAdc, VGS = 0) (ID = 3.0 mAdc, VGS = 0) Static Drain-Source On Resistance (ID = 1.0 mAdc, VGS = 0) IDSS MPF4392 MPF4393 mAdc VDS(on) MPF4392 MPF4393 Vdc rDS(on) MPF4392 MPF4393 SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, ID = 25 mAdc, f = 1.0 kHz) (VDS = 15 Vdc, ID = 5.0 mAdc, f = 1.0 kHz) |yfs| MPF4392 MPF4393 mmhos 1. Pulse Test: Pulse Width 300 s, Duty Cycle 3.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 3 1 Publication Order Number: MPF4392/D MPF4392 MPF4393 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max - - - - 60 100 - 6.0 10 - - 2.5 3.2 3.5 - - - 2.0 2.5 5.0 5.0 - - 15 29 20 35 - - 4.0 6.5 15 15 - - 20 37 35 55 Unit SMALL-SIGNAL CHARACTERISTICS (continued) Drain-Source "ON" Resistance (VGS = 0, ID = 0, f = 1.0 kHz) rds(on) MPF4392 MPF4393 Input Capacitance (VGS = 15 Vdc, VDS = 0, f = 1.0 MHz) Ciss Reverse Transfer Capacitance (VGS = 12 Vdc, VDS = 0, f = 1.0 MHz) (VDS = 15 Vdc, ID = 10 mAdc, f = 1.0 MHz) Crss pF pF SWITCHING CHARACTERISTICS Rise Time (See Figure 2) (ID(on) = 6.0 mAdc) (ID(on) = 3.0 mAdc) MPF4392 MPF4393 tr Fall Time (See Figure 4) (VGS(off) = 7.0 Vdc) (VGS(off) = 5.0 Vdc) MPF4392 MPF4393 Turn-On Time (See Figures 1 and 2) (ID(on) = 6.0 mAdc) (ID(on) = 3.0 mAdc) MPF4392 MPF4393 Turn-Off Time (See Figures 3 and 4) (VGS(off) = 7.0 Vdc) (VGS(off) = 5.0 Vdc) MPF4392 MPF4393 ns tf ns ton ns toff http://onsemi.com 2 ns MPF4392 MPF4393 TYPICAL SWITCHING CHARACTERISTICS 500 200 1000 TJ = 25C RK = RD 100 500 MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V 100 50 20 10 5.0 RK = 0 10 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) 20 30 1.0 0.5 0.7 1.0 50 200 MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V 500 RK = RD 200 t f , FALL TIME (ns) t d(off) , TURN-OFF DELAY TIME (ns) 1000 500 100 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) 20 30 50 Figure 2. Rise Time TJ = 25C RK = RD 20 10 RK = 0 100 TJ = 25C MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V 50 20 10 RK = 0 5.0 2.0 2.0 1.0 0.5 0.7 1.0 RK = 0 2.0 1000 5.0 MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V 20 Figure 1. Turn-On Delay Time 50 TJ = 25C 50 5.0 2.0 1.0 0.5 0.7 1.0 RK = RD 200 t r , RISE TIME (ns) t d(on), TURN-ON DELAY TIME (ns) 1000 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 1.0 0.5 0.7 1.0 50 Figure 3. Turn-Off Delay Time 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) Figure 4. Fall Time http://onsemi.com 3 20 30 50 MPF4392 MPF4393 NOTE 1 -VDD RD SET VDS(off) = 10 V INPUT RK RT RGEN 50 RGG 50 50 VGG VGEN INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 s DUTY CYCLE 2.0% RGG RK RD = RD(RT + 50) RD + RT + 50 15 20 MPF4392 10 10 C, CAPACITANCE (pF) y fs , FORWARD TRANSFER ADMITTANCE (mmhos) Figure 5. Switching Time Test Circuit The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (-VGG). The Drain-Source Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or Gate-Drain Capacitance (Cgd) is charged to VGG + VDS. During the turn-on interval, Gate-Source Capacitance (Cgs) disOUTPUT charges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (RD) and Drain-Source Resistance (rds). During the turn-off, this charge flow is reversed. Predicting turn-on time is somewhat difficult as the channel resistance rds is a function of the gate-source voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turn-on time is non-linear. During turn-off, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions: 1) RK is equal to RD which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator. MPF4393 7.0 5.0 Tchannel = 25C VDS = 15 V 3.0 Cgs 7.0 5.0 Cgd Tchannel = 25C (Cds IS NEGLIGIBLE) 3.0 2.0 1.5 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 1.0 0.03 0.05 0.1 25 mA 50 mA 75 mA 100 mA 120 80 40 Tchannel = 25C 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 30 2.0 125 mA rds(on) , DRAIN-SOURCE ON-STATE RESISTANCE (NORMALIZED) rds(on) , DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) IDSS = 10 160 mA 10 Figure 7. Typical Capacitance Figure 6. Typical Forward Transfer Admittance 200 0.3 0.5 1.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) 7.0 8.0 1.8 ID = 1.0 mA VGS = 0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -70 -40 110 -10 20 50 80 Tchannel, CHANNEL TEMPERATURE (C) 140 Figure 9. Effect of Temperature On Drain-Source On-State Resistance Figure 8. Effect of Gate-Source Voltage On Drain-Source Resistance http://onsemi.com 4 170 MPF4392 MPF4393 90 10 Tchannel = 25C 80 70 8.0 7.0 rDS(on) @ VGS = 0 60 50 NOTE 2 9.0 6.0 VGS(off) 5.0 40 4.0 30 3.0 20 2.0 10 1.0 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA) Figure 10. Effect of IDSS On Drain-Source Resistance and Gate-Source Voltage V GS , GATE-SOURCE VOLTAGE (VOLTS) r ds(on), DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) 100 The Zero-Gate-Voltage Drain Current (IDSS), is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of Gate-Source Off Voltage (VGS(off)) and Drain-Source On Resistance (rds(on)) toIDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an MPF4392 The electrical characteristics table indicates that an MPF4392 has an IDSS range of 25 to 75 mA. Figure 10 shows rds(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts. http://onsemi.com 5 MPF4392 MPF4393 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N N http://onsemi.com 6 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- MPF4392 MPF4393 Notes http://onsemi.com 7 MPF4392 MPF4393 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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