2011-10-04
1
BCX42
1
2
3
PNP Silicon AF and Switching Transistor
• For general AF applications
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: BCX41 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCX42 DKs 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 125 V
Collector-base voltage VCBO 125
Emitter-base voltage VEBO 5
Collector current IC800 mA
Peak collector current, tp ≤ 10 ms ICM 1 A
Base current IB100 mA
Peak base current IBM 200
Total power dissipation
TS ≤ 79 °C
Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 215 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-10-04
2
BCX42
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 125 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 125 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 100 V, IE = 0
VCB = 100 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
Collector-emitter cutoff current
VCE = 100 V, TA = 85 °C
VCE = 100 V, TA = 125 °C
ICEO
-
-
-
-
10
75
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 100 µA, VCE = 1 V
IC = 100 mA, VCE = 1 V
IC = 200 mA, VCE = 1 V
hFE
25
63
40
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 300 mA, IB = 30 mA
VCEsat - - 0.9 V
Base emitter saturation voltage1)
IC = 300 mA, IB = 30 mA
VBEsat - - 1.4
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT- 150 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 12 - pF
1Pulse test: t < 300µs; D < 2%
2011-10-04
3
BCX42
DC current gain hFE = ƒ(IC)
VCE = 1 V
10 10 10 10
BCX 42/BSS 63 EHP00435
h
mA
-1 0 2 3
FE
3
10
10
2
1
10
5
5
1
10
150
25
-50
555
C
Ι
˚C
˚C
˚C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0 400 800
BCX 42/BSS 63 EHP00433
VCE sat
mV
mA
103
0
10
10
101
10
102
10
5
5
5
10 200 600
150
25
-50
-1
C
Ι
˚C
˚C
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
10 013
BCX 42/BSS 63 EHP00432
VBE sat
10
mA
10
10
10
3
2
1
0
-1
5
5
5
V
25
150
-50
2
C
Ι
˚C
˚C
˚C
Collector current IC = ƒ(VBE)
VCE = 1V
10 013
BCX 42/BSS 63 EHP00429
V
BE
10
mA
10
10
10
3
2
1
0
-1
5
5
5
V
25
150
-50
2
T
A
=
C
Ι
˚C
˚C
˚C
2011-10-04
4
BCX42
Collector cutoff current ICBO = ƒ(TA)
VCBO = 100 V
10 0 50 100 150
BCX 42/BSS 63 EHP00434
TA
5
10
10
nA
10
Ι
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
˚C
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10 10 10 10
BCX 42/BSS 63 EHP00431
f
mA
MHz
0123
5
T
3
10
10
2
1
10
5
5
5
C
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
0
10
20
30
40
50
60
70
pF
90
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C150
TS
0
50
100
150
200
250
300
mW
400
Ptot
2011-10-04
5
BCX42
Total power dissipation Ptot = ƒ(TS)
10
EHP00430BCX 42/BSS 63
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
=
DT
tp
T
totmax
tot
PDC
P
p
t
2011-10-04
6
BCX42
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-10-04
7
BCX42
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
