BCX42 PNP Silicon AF and Switching Transistor * For general AF applications 2 3 * High breakdown voltage 1 * Low collector-emitter saturation voltage * Complementary type: BCX41 (NPN) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type BCX42 Marking DKs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 125 Collector-base voltage VCBO 125 Emitter-base voltage VEBO 5 Collector current IC Peak collector current, tp 10 ms ICM Base current IB 100 Peak base current IBM 200 Total power dissipation Ptot 330 mW Junction temperature Tj 150 C Storage temperature Tstg Thermal Resistance Parameter Symbol Value RthJS 215 800 1 Unit V mA A mA TS 79 C Junction - soldering point1) -65 ... 150 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-10-04 BCX42 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 125 Unit V IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 125 - - V(BR)EBO 5 - - IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 100 V, IE = 0 - - 0.1 VCB = 100 V, IE = 0 , TA = 150 C - - 20 VCE = 100 V, TA = 85 C - - 10 VCE = 100 V, TA = 125 C - - 75 - - 100 Collector-emitter cutoff current ICEO Emitter-base cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain1) - hFE IC = 100 A, VCE = 1 V 25 - - IC = 100 mA, VCE = 1 V 63 - - IC = 200 mA, VCE = 1 V 40 - - VCEsat - - 0.9 VBEsat - - 1.4 fT - 150 - MHz Ccb - 12 - pF Collector-emitter saturation voltage1) V IC = 300 mA, IB = 30 mA Base emitter saturation voltage1) IC = 300 mA, IB = 30 mA AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300s; D < 2% 2 2011-10-04 BCX42 DC current gain hFE = (IC) VCE = 1 V 10 3 Collector-emitter saturation voltage IC = (VCEsat ), hFE = 10 BCX 42/BSS 63 EHP00435 3 BCX 42/BSS 63 10 EHP00433 mA h FE 5 150 C 25 C -50 C C 2 10 150 C 25 C 5 -50 C 10 2 1 10 5 5 0 10 5 10 1 10 -1 5 10 0 5 10 1 5 10 2 10 -1 mA 10 3 0 200 400 600 mV 800 C VCE sat Base-emitter saturation voltage Collector current IC = (VBE ) IC = (VBEsat), hFE = 10 VCE = 1V 10 3 BCX 42/BSS 63 EHP00432 10 3 mA BCX 42/BSS 63 EHP00429 mA C C 10 2 10 2 5 5 150 C 25 C -50 C 10 1 10 1 5 10 TA = 150 C 25 C -50 C 5 0 0 10 5 10 -1 5 0 1 2 V 10 -1 3 VBE sat 0 1 2 V 3 VBE 3 2011-10-04 BCX42 Collector cutoff current ICBO = (TA) VCBO = 100 V BCX 42/BSS 63 10 4 nA CB0 Transition frequency fT = (IC) VCE = parameter in V, f = 2 GHz EHP00434 10 3 BCX 42/BSS 63 EHP00431 MHz max 10 3 fT 5 5 10 2 5 10 2 typ 10 1 5 10 5 0 5 10 -1 0 50 100 10 1 10 0 150 C 5 10 1 5 10 2 mA 10 3 C TA Collector-base capacitance Ccb = (VCB) Total power dissipation P tot = (TS) Emitter-base capacitance Ceb = (VEB) 400 90 mW 70 300 60 Ptot CCB(CEB ) pF 250 50 200 40 150 CEB 30 100 20 50 10 CCB 0 0 4 8 12 16 V 0 0 22 VCB(VEB 15 30 45 60 75 90 105 120 C 150 TS 4 2011-10-04 BCX42 Total power dissipation P tot = (TS) 10 3 BCX 42/BSS 63 Ptot max 5 Ptot DC EHP00430 D= tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-04 Package SOT23 BCX42 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 6 2011-10-04 BCX42 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-10-04