2000-05-12
Page 1
Preliminary data
SPD30N03S2L-08
OptiMOS Power-Transistor Product Summary
V
DS 30 V
R
DS
(
on
)
7.5 m
W
I
D30 A
Feature
·
N-Channel
·
Enhancement mode
·
Logic Level
·
Excellent Gate Charge x
R
DS
(
on
)
product (FOM)
·
Superior thermal resistance
·
175°C operating temperature
·
Avalanche rated
·
d
v
/d
t
rated
P-TO252
Type Package Ordering Code
SPD30N03S2L-08 P-TO252 Q67042-S4031
Marking
2N03L08
Maximum Ratings,at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
C = 25°C ,1)
T
C=100°C
I
D
30
30
A
Pulsed drain current
T
C=25°C
I
D puls 120
Avalanche energy, single pulse
I
D=30 A ,
V
DD=25V,
R
GS=25
W
E
AS 250 mJ
Reverse diode d
v
/d
t
I
S=30A,
V
DS=24V, d
i
/d
t
=200A/µs,
T
jmax=175°C
d
v
/d
t
6kV/µs
Gate source voltage
V
GS ±20 V
Power dissipation
T
C=25°C
P
tot 125 W
Operating and storage temperature
T
j
,
T
st
g
-55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
1Current limited by bondwire; with an
R
thJC = 1.2 K/W the chip is able to carry
I
D = 91 A
2000-05-12
Page 2
Preliminary data
SPD30N03S2L-08
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
R
thJC - - 1.2 K/W
Thermal resistance, junction - ambient, leaded
R
thJA - - 100
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
R
thJA
-
-
-
-
75
50
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS=0V,
I
D=1mA
V
(BR)DSS 30 - - V
Gate threshold voltage,
V
GS =
V
DS
I
D = 80 µA
V
GS(th) 1.2 1.6 2
Zero gate voltage drain current
V
DS=30V,
V
GS=0V,
T
j=25°C
V
DS=30V,
V
GS=0V,
T
j=125°C
I
DSS
-
-
0.01
10
1
100
µA
Gate-source leakage current
V
GS=20V,
V
DS=0V
I
GSS - 1 100 nA
Drain-source on-state resistance
V
GS=4.5V,
I
D=30A
R
DS(on) - 7.7 10 m
W
Drain-source on-state resistance
V
GS=10V,
I
D=30A
R
DS(on) - 5.6 7.5
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2000-05-12
Page 3
Preliminary data
SPD30N03S2L-08
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
³
2*
I
D*
R
DS(on)max ,
I
D=30A
29 58 - S
Input capacitance
C
iss
V
GS=0V,
V
DS=25V,
f
=1MHz
- 1900 2370 pF
Output capacitance
C
oss - 750 940
Reverse transfer capacitance
C
rss - 170 230
Gate resistance
R
G- 2.3 -
W
Turn-on delay time
t
d(on)
V
DD=15V,
V
GS=10V,
I
D=15A,
R
G=3.6
W
- 8 10 ns
Rise time
t
r- 34 42.5
Turn-off delay time
t
d(off) - 62 77.5
Fall time
t
f- 47 59
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD=24V,
I
D=30A - 6 8 nC
Gate to drain charge
Q
gd - 14 18
Gate charge total
Q
gV
DD=24V,
I
D=30A,
V
GS=0 to 10V
- 47 59
Gate plateau voltage
V
(
plateau
)
V
DD=24V,
I
D=30A - 3.1 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C=25°C - - 30 A
Inverse diode direct current,
pulsed
I
SM - - 120
Inverse diode forward voltage
V
SD
V
GS=0V,
I
F=30A - 0.9 1.3 V
Reverse recovery time
t
rr
V
R=15V,
I
F=
l
S,
d
i
F/d
t
=100A/µs
- 33 40 ns
Reverse recovery charge
Q
rr - 32 40 nC
2000-05-12
Page 4
Preliminary data
SPD30N03S2L-08
1 Power dissipation
P
tot =
f
(
T
C)
0 20 40 60 80 100 120 140 160°C 190
T
C
0
10
20
30
40
50
60
70
80
90
100
110
120
W
140 SPD30N03S2L-08
P
tot
2 Drain current
I
D =
f
(
T
C)
parameter:
V
GS
³
10 V
0 20 40 60 80 100 120 140 160°C 190
T
C
0
4
8
12
16
20
24
A
32
SPD30N03S2L-08
I
D
3 Safe operating area
I
D =
f
(
V
DS )
parameter :
D
= 0 ,
T
C = 25 °C
10 -1 10 0 10 1 10 2
V
V
DS
0
10
1
10
2
10
3
10
A
SPD30N03S2L-08
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 13.0µs
4 Transient thermal impedance
Z
thJC =
f
(
t
p)
parameter :
D
=
t
p/
T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPD30N03S2L-08
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2000-05-12
Page 5
Preliminary data
SPD30N03S2L-08
5 Typ. output characteristic
I
D =
f
(
V
DS);
T
j=25°C
parameter:
t
p = 80 µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
V
DS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
75 SPD30N03S2L-08
I
D
V
GS [V]
a
a 2.6
b
b 2.8
c
c 3.0
d
d 3.2
e
e 3.4
f
f 3.6
g
g 3.8
h
h 4.5
i
P
tot = 125W
i 10.0
6 Typ. drain-source on resistance
R
DS(on) =
f
(
I
D)
parameter:
V
GS
0 10 20 30 40 50 A65
I
D
0
2
4
6
8
10
12
14
16
18
20
22
W
26
SPD30N03S2L-08
R
DS(on)
V
GS [V] =
d
d
3.2
e
e
3.4
f
f
3.6
g
g
3.8
h
h
4.5
i
i
10.0
7 Typ. transfer characteristics
I
D=
f
(
V
GS );
V
DS
³
2 x
I
D x
R
DS(on)max
parameter:
t
p = 80 µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0
V
GS
0
5
10
15
20
25
30
35
40
45
50
A
60
I
D
8 Typ. forward transconductance
g
fs = f(
I
D);
T
j=25°C
parameter:
g
fs
0 20 40 60 80 100 A 130
I
D
0
10
20
30
40
50
60
70
S
90
g
fs
2000-05-12
Page 6
Preliminary data
SPD30N03S2L-08
9 Drain-source on-state resistance
R
DS(on) =
f
(
T
j)
parameter :
I
D = 30 A,
V
GS = 10 V
-60 -20 20 60 100 140 °C 200
T
j
0
2
4
6
8
10
12
14
W
17 SPD30N03S2L-08
R
DS(on)
typ
98%
10 Gate threshold voltage
V
GS(th) =
f
(
T
j)
parameter:
V
GS =
V
DS,
I
D = 80 µA
-60 -20 20 60 100 °C 160
T
j
0.0
0.5
1.0
1.5
2.0
V
3.0
V
GS(th)
max
typ
min
11 Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS=0V,
f
=1 MHz
0 5 10 15 20 V 30
V
DS
2
10
3
10
4
10
pF
C
C
i
ss
C
oss
C
rss
12 Forward character. of reverse diode
I
F =
f
(VSD)
parameter:
T
j , tp = 80 µs
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
V
SD
0
10
1
10
2
10
3
10
A
SPD30N03S2L-08
I
F
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 175 °C typ
T
j = 175 °C (98%)
2000-05-12
Page 7
Preliminary data
SPD30N03S2L-08
13 Avalanche energy
E
AS =
f
(
T
j)
par.:
I
D = 30 A ,
V
DD = 25 V,
R
GS = 25
W
25 45 65 85 105 125 145 °C 185
T
j
0
20
40
60
80
100
120
140
160
180
200
220
mJ
260
E
AS
14 Typ. gate charge
V
GS =
f
(
Q
Gate)
parameter:
I
D = 30 A pulsed
0 10 20 30 40 50 60 nC 75
Q
Gate
0
2
4
6
8
10
12
V
16
SPD30N03S2L-08
V
GS
0,8
V
DS max
DS max
V
0,2
15 Drain-source breakdown voltage
V
(BR)DSS =
f
(
T
j)
parameter:
I
D=10 mA
-60 -20 20 60 100 140 °C 200
T
j
27
28
29
30
31
32
33
34
35
V
37 SPD30N03S2L-08
V
(BR)DSS
2000-05-12
Page 8
Preliminary data
SPD30N03S2L-08
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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