Preliminary data SPD30N03S2L-08 OptiMOS Power-Transistor Product Summary Feature * N-Channel * Enhancement mode * Logic Level * Excellent Gate Charge x RDS(on) product (FOM) * Superior thermal resistance * 175C operating temperature * Avalanche rated * dv/dt rated Type VDS 30 V RDS(on) 7.5 mW ID 30 A P-TO252 Package Ordering Code Marking SPD30N03S2L-08 P-TO252 Q67042-S4031 2N03L08 Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25C ,1) 30 TC=100C 30 Pulsed drain current Unit ID puls 120 EAS 250 dv/dt 6 Gate source voltage VGS 20 V Power dissipation Ptot 125 W -55... +175 C TC=25C Avalanche energy, single pulse ID=30 A , V DD=25V, R GS=25W Reverse diode dv/dt mJ kV/s IS=30A, V DS=24V, di/dt=200A/s, T jmax=175C TC=25C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 1Current limited by bondwire; with an R thJC = 1.2 K/W the chip is able to carry I D = 91 A Page 1 2000-05-12 Preliminary data SPD30N03S2L-08 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.2 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = VDS ID = 80 A Zero gate voltage drain current A IDSS V DS=30V, VGS=0V, T j=25C - 0.01 1 V DS=30V, VGS=0V, T j=125C - 10 100 IGSS - 1 100 nA RDS(on) - 7.7 10 mW RDS(on) - 5.6 7.5 Gate-source leakage current V GS=20V, V DS=0V Drain-source on-state resistance V GS=4.5V, ID=30A Drain-source on-state resistance V GS=10V, I D=30A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2000-05-12 Preliminary data SPD30N03S2L-08 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 29 58 - S pF Dynamic Characteristics Transconductance g fs V DS2*ID*R DS(on)max , ID=30A Input capacitance Ciss V GS=0V, VDS=25V, - 1900 2370 Output capacitance Coss f=1MHz - 750 940 Reverse transfer capacitance Crss - 170 230 Gate resistance RG - 2.3 - W Turn-on delay time t d(on) - 8 10 ns Rise time tr - 34 42.5 Turn-off delay time t d(off) - 62 77.5 Fall time tf - 47 59 - 6 8 - 14 18 - 47 59 V(plateau) V DD=24V, I D=30A - 3.1 - V IS - - 30 A - - 120 V DD=15V, V GS=10V, ID=15A, R G=3.6W Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=24V, I D=30A V DD=24V, I D=30A, nC V GS=0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous T C=25C forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD V GS=0V, IF=30A - 0.9 1.3 V Reverse recovery time t rr V R=15V, IF=lS, - 33 40 ns Reverse recovery charge Q rr diF/dt=100A/s - 32 40 nC Page 3 2000-05-12 Preliminary data SPD30N03S2L-08 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS 10 V SPD30N03S2L-08 SPD30N03S2L-08 32 140 W A 120 110 24 90 ID Ptot 100 20 80 16 70 60 12 50 40 8 30 20 4 10 0 0 20 40 60 80 0 0 100 120 140 160 C 190 20 40 60 80 100 120 140 160C 190 TC TC 3 Safe operating area 4 Transient thermal impedance I D = f ( V DS ) ZthJC = f (tp ) parameter : D = 0 , T C = 25 C parameter : D = tp /T 10 3 SPD30N03S2L-08 10 1 SPD30N03S2L-08 K/W A /I D 10 0 = Z thJC V DS tp = 13.0s R DS ( ID on ) 10 2 10 -1 100 s D = 0.50 10 10 1 -2 0.20 0.10 1 ms 0.05 10 ms 10 -3 DC 10 0 -1 10 10 0 10 1 single pulse 0.02 0.01 V 10 2 VDS 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2000-05-12 Preliminary data SPD30N03S2L-08 5 Typ. output characteristic 6 Typ. drain-source on resistance I D = f (VDS); T j=25C parameter: tp = 80 s RDS(on) = f (ID ) parameter: VGS SPD30N03S2L-08 75 SPD30N03S2L-08 26 Ptot = 125W W A b 2.8 55 c 3.0 50 d 3.2 f 45 e 40 35 30 e 3.4 f 3.6 g 3.8 h 4.5 i 10.0 e f 22 20 RDS(on) 60 ID d VGS [V] a 2.6 i h g 18 16 14 g 12 d 10 25 h 8 20 c 6 i 15 4 b 10 5 2 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0 0 5.0 VGS [V] = d 3.2 e f 3.4 3.6 10 g 3.8 20 h i 4.5 10.0 30 40 50 VDS A 65 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance I D= f ( VGS ); V DS 2 x ID x R DS(on)max gfs = f(ID ); Tj=25C parameter: tp = 80 s parameter: gfs 90 60 A S 50 70 40 gfs ID 45 35 60 50 30 40 25 30 20 15 20 10 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 4.0 V VGS Page 5 0 0 20 40 60 80 100 A 130 ID 2000-05-12 Preliminary data SPD30N03S2L-08 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : I D = 30 A, VGS = 10 V parameter: VGS = VDS , ID = 80 A SPD30N03S2L-08 17 3.0 W V V GS(th) RDS(on) 14 12 2.0 10 max 98% 1.5 8 typ typ 6 1.0 min 4 0.5 2 0 -60 -20 20 60 100 C 140 0.0 -60 200 -20 20 60 100 Tj 160 C Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS=0V, f=1 MHz parameter: Tj , tp = 80 s 10 4 10 3 SPD30N03S2L-08 A pF Ciss C IF 10 2 Coss 10 3 10 1 Tj = 25 C typ Crss Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 15 20 V 30 VDS 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Page 6 2000-05-12 Preliminary data SPD30N03S2L-08 13 Avalanche energy 14 Typ. gate charge EAS = f (Tj) VGS = f (QGate ) parameter: ID = 30 A pulsed par.: ID = 30 A , VDD = 25 V, R GS = 25 W SPD30N03S2L-08 260 16 mJ V 220 12 180 VGS E AS 200 160 10 0,2 VDS max 0,8 VDS max 140 8 120 100 6 80 4 60 40 2 20 0 25 45 65 85 105 125 145 C 185 Tj 0 0 10 20 30 40 50 60 nC 75 Q Gate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA SPD30N03S2L-08 37 V V(BR)DSS 35 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Page 7 2000-05-12 Preliminary data SPD30N03S2L-08 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. 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