TOSHIBA 1SV277 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S8V277 VCO FOR UHF BAND RADIO Unit in mm @ High Capacitance Ratio : Cyy/Cay=2.3 (Typ.) 4 +0 <<] 125-0. Low Series Resistance : rg=0.420 (Typ.) = a @ Small Package z so] 3 < +t) H 3 n| 9 _|o+0.05 MAXIMUM RATINGS (Ta = 25C) __t CHARACTERISTIC SYMBOL | RATING | UNIT os tthe loas*836 Reverse Voltage VR 10 Vv pare io} +3 Junction Temperature Tj 125 C ; sO Storage Temperature Range Tstg 55~125 C NY JEDEC _ EIAJ _ TOSHIBA 1-1E1A ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Reverse Voltage VR IR=1zA 10 Vv Reverse Current IR VR=10V 3 | nA Capacitance Civ VR=1V, f=1MHz 4.0 4.5 4.9 pF Capacitance Cav VR=4V, f=1MHz 1.85 2.0 | 2.385 | pF Capacitance Ratio Ciy/ Cay 2.0 2.3 Series Resistance Ig VR=1V, f=470MHz | 0.42 | 0.55 QO MARKING Luf TO | 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to abserve standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 2000-03-08 1/3TOSHIBA 1SV277 Cy - VR IR VR e ct ~ fa > wo B 3 8 2 Zz os a ~ et o 3 mR < 2 ay 3 < o z ica] [anf 0 1 2 3 4 5 6 7 8 9 10 0 4 8 12 16 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) fg VR oc - Ta f = 470 MHz Ta = 25C 3 wv 2 a = Nal 8 Zz. 1 a me a o (O g 3s S = =i 2 5 3 2 e oD 3 -4 0.3 0.5 1 2 3 5 10 40 20 0 20 40 60 80 REVERSE VOLTAGE VR (VY) AMBIENT TEMPERATURE Ta (OC) 2000-03-08 2/3TOSHIBA SPICE PARAMETER SPICE MODEL DATA FORMAT SPICE SYMBOL FREQUENCY RANGE 1SV277 : BERKLEY SPICE.2G.6 DIODE MODEL : MODEL FORMAT : Ig (A), Rg (Q), N(), CJO(), Vy(V), M(), By (V), Ipy (A) : f= 0.1~3 GHz REVERSE VOLTAGE RANGE : VR =1~4V PARAMETER Ig = 4.174E 16 N = 1.037 By = 10 Ipy = _ 1.00E 04 Rg = 0.42 CJO = 6.900EK 12 VJ = 2.6 M 1.3 ls = 1.00E 09 VARICAP ,_rs Ls be ee (Note 1) : These parameters from Ig to M mean die characteristic. Actually device has lead inductance so Ls is necessary for simulation. And please use default value except above parameters. (Note 2) : Rg shows the value at the condition of VR = 1V and f = 470 MHz. If another value is needed, please refer to Rg VR curve in this data sheets. 2000-03-08 3/3