Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regar ding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
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Corporation or a third party.
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contained therein.
HAT3008R/HAT3008RJ
Silicon N/P Channel Power MOS FET
High Speed Power Switching
ADE-208-536B (Z)
3rd. Edition
Feb. 1999
Features
• For Automotive Application ( at Type Code “J “)
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
SOP–8
1234
5
6
7
8
G
D
S
D
G
D
S
D
Nch Pch
1
2
78
4
56
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
HAT3008R/HAT3008RJ
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Nch Pch
Drain to source voltage VDSS 60 – 60 V
Gate to source voltage VGSS ±20 ± 20 V
Drain current ID5 – 3.5 A
Drain peak current ID(pulse)Note1 40 – 28 A
Body-drain diode IDR 5 – 3.5 A
reverse drain current
Avalanche current HAT3008R IAP Note4 ———
HAT3008RJ 5 – 3.5 A
Avalanche energy HAT3008R EAR Note4 ———
HAT3008RJ 2.14 1.05 mJ
Channel dissipation Pch Note2 22W
Channel dissipation Pch Note3 33W
Channel temperature Tch 150 150 °C
Storage temperature Tstg – 55 to + 150 –55 to + 150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
4. Value at Tch=25°C, Rg≥50Ω
HAT3008R/HAT3008RJ
3
Electrical Characteristics (Ta = 25°C)
( N Channel )
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 60——V I
D = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ± 20 — — V IG = ± 100 µA, VDS = 0
Gate to source leak current IGSS ——± 10 µAV
GS = ± 16 V, VDS = 0
Zero gate voltage HAT3008R IDSS ——1 µAV
DS = 60 V, VGS = 0
drain current HAT3008RJ IDSS — — 0.1 µA
Zero gate voltage HAT3008R IDSS ———µAV
DS = 48 V, VGS = 0
drain current HAT3008RJ IDSS ——10µA Ta = 125°C
Gate to source cutoff voltage VGS(off) 1.2 — 2.2 V VDS = 10 V, I D = 1 mA
Static drain to source on state RDS(on) — 0.043 0.058 ΩID = 3 A, VGS = 10 V Note4
resistance RDS(on) — 0.056 0.084 ΩID = 3 A, VGS = 4 V Note4
Forward transfer admittance |yfs|69—SI
D = 3 A, VDS = 10 V Note4
Input capacitance Ciss — 520 — pF VDS = 10 V
Output capacitance Coss — 270 — pF VGS = 0
Reverse transfer capacitance Crss — 100 — pF f = 1MHz
Turn-on delay time td(on) — 11 — ns VGS =10 V, ID = 3 A
Rise time tr— 40 — ns VDD ≅ 30 V
Turn-off delay time td(off) — 110 — ns
Fall time tf—80—ns
Body–drain diode forward voltage VDF — 0.84 1.1 V IF = 5 A, VGS = 0 Note4
Body–drain diode reverse
recovery time trr — 40 — ns IF =5 A, VGS = 0
diF/ dt = 50 A/µs
Note: 5. Pulse test
HAT3008R/HAT3008RJ
4
( P Channel )
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS – 60 — — V ID = – 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ± 20 — — V IG = ± 100 µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ± 16 V, VDS = 0
Zero gate voltage HAT3008R IDSS ——–1µAV
DS = – 60 V, VGS = 0
drain current HAT3008RJ IDSS — — –0.1 µA
Zero gate voltage HAT3008R IDSS ———µAV
DS = – 48 V, VGS = 0
drain current HAT3008RJ IDSS — — –10 µA Ta = 125°C
Gate to source cutoff voltage VGS(off) –1.2 — –2.2 V VDS = – 10 V, I D = – 1mA
Static drain to source on state RDS(on) — 0.12 0.15 ΩID = – 2 A, VGS = – 10 V Note4
resistance RDS(on) — 0.16 0.23 ΩID = – 2 A, VGS = – 4 V Note4
Forward transfer admittance |yfs| 3 4.5 — S ID = – 2 A, VDS = –10 V Note4
Input capacitance Ciss — 600 — pF VDS = –10 V
Output capacitance Coss — 290 — pF VGS = 0
Reverse transfer capacitance Crss — 75 — pF f = 1MHz
Turn-on delay time td(on) — 11 — ns VGS = –10 V, ID = – 2 A
Rise time tr— 30 — ns VDD ≅ – 30 V
Turn-off delay time td(off) — 100 — ns
Fall time tf—55—ns
Body–drain diode forward voltage VDF — – 0.98 – 1.28 V IF = – 3.5 A, VGS = 0 Note4
Body–drain diode reverse
recovery time trr — 70 — ns IF = – 3.5 A, VGS = 0
diF/ dt = 50 A/µs
Note: 5. Pulse test
HAT3008R/HAT3008RJ
5
Main Characteristics ( N Channel )
4.0
3.0
2.0
1.0
050 100 150 200
100
30
10
3
0.3
1
0.1 0.3 1 310 30 100
10
8
6
4
2
0246810
10
8
6
4
2
012345
0.03
0.01
0.1
10 µs
1 ms
PW = 10 ms (1shot)
Ta = 25 °C
1 shot pulse
100 µs
3.5 V
4 V
10 V
3 V
V = 2 V
GS
2.5 V
Tc = 75°C 25°C
–25°C
Channel Dissipation Pch (W)
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
Pulse Test
V = 10 V
Pulse Test
DS
2 Drive Operation
1 Drive Operation
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Note 5
DC Operation (PW < 10 s)
HAT3008R/HAT3008RJ
6
0.5
0.4
0.3
0.2
0.1
048
12 16 20 1 10 1000.1 3300.3
0.20
0.16
0.12
0.08
0.04
–40 0 40 80 120 160
00.1 0.2 1510
20
50
10
2
5
1
0.5
2 A
1 A
1.0
0.2
0.5
0.1
0.02
0.01
0.05 V = 4 V
GS
I = 5 A
D
V = 4 V
GS
10 V
1, 2 A
1, 2, 5 A
0.5 2
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )Ω
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Ω
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test V = 10 V
Pulse Test
DS
Pulse Test
I = 5 A
D
10 V
25 °C
Tc = –25 °C
75 °C
HAT3008R/HAT3008RJ
7
0.1 0.5 1 2 100.2 5 01020304050
1000
200
500
100
10
20
50
100
80
60
40
20
0
20
16
12
8
4
816243240
0
1000
300
100
30
10
0.1 0.2 1510
V = 10 V
25 V
50 V
DD
V = 50 V
25 V
10 V
DD
r
t
500
200
100
20
50
10
5
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
2000
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 5A
D
VGS
VDS
3
10.5 2
V = 10 V, V = 30 V
PW = 5 µs, duty < 1 %
GS DD
tf
d(on)
t
d(off)
t
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
HAT3008R/HAT3008RJ
8
00.4 0.8 1.2 1.6 2.0
2.5
2.0
1.5
1.0
0.5
25 50 75 100 125 150
0
V = 0, –5 V
GS
10 V
5 V
10
8
6
4
2
I = 5 A
V = 25 V
L = 100 µH
duty < 0.1 %
Rg > 50
AP
DD
Ω
Channel Temperature Tch (°C)
Repetive Avalanche Energy E (mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50Ω
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
Avalanche Test Circuit Avalanche Waveform
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50Ω
90%
10%
t
f
Switching Time Test Circuit Switching Time Waveform
HAT3008R/HAT3008RJ
9
( P Channel )
4.0
3.0
2.0
1.0
050 100 150 200
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3 –1 –3 –10
–10
–8
–6
–4
–2
0–2 –4 –6 –8 –10
–5 V
–4 V
0 –1–2–3–4–5
–30 –100
–100
–30
–10 V
–3.5 V
–3 V
–10
–8
–6
–4
–2 –25 °C
25 °C
Tc = 75 °C
V = –2.5 V
GS
Channel Dissipation Pch (W)
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
2 Drive Operation
1 Drive Operation
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Ta = 25 °C
1 shot pulse
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Operation in
this area is
limited by R
DS(on)
Note 6
DC Operation (PW < 10 s)
100 µs
10 µs
1 ms
PW = 10 ms
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
V = 10 V
Pulse Test
DS
Note 6 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
HAT3008R/HAT3008RJ
10
–0.5
–0.4
–0.3
–0.2
–0.1
0–4 –8 –12 –16 –20
0.5
0.4
0.3
0.2
0.1
–40 0 40 80 120 160
0
–10 V
I = –2 A
D
GS
V = –4 V
–0.1 –1 –10
0.2
10
20
5
1
0.5
–0.2 –0.5 –2 –5
1
0.5
0.05
0.02
0.01
–0.1 –0.3 –1 –3 –10 –30 –100
–0.5, –1 A
I = –2 A
D
–1 A
–0.5 A
0.2
0.1 –10 V
V = –4 V
GS
–0.5 A –1 A
–2 A
275 °C
25 °C
Ta = –25 °C
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Pulse Test
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test
Ω
Case Temperature Tc (°C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Ω
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
V = 10 V
Pulse Test
DS
HAT3008R/HAT3008RJ
11
500
200
100
20
50
10
5
–0.1 –0.2 –1 –5 –10 0 –10 –20 –30 –40 –50
2000
1000
500
200
100
50
0
–20
–40
–60
–80
0
0
–4
–8
–12
–16
–20–100 81624
32 40
1000
100
300
30
3
10
1
–0.1 –0.2 –0.5 –1 –2 –5 –10
–0.5 –2
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
20
10
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
DS
V
GS
V
V = –50 V
–25 V
–10 V
DD
D
I = –3.5 A
V = –10 V
–25 V
–50 V
DD
tf
r
t
d(off)
t
d(on)
t
DD
V = –10 V, V = –30 V
Pw = 5 µs, duty < 1 %
GS
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
HAT3008R/HAT3008RJ
12
–10
–8
–6
–4
–2
0–0.4 –0.8 –1.2 –1.6 –2.0
V = 0, 5 V
GS
–10 V
–5 V
2.5
2.0
1.5
1.0
0.5
25 50 75 100 125 150
0
I = –3.5 A
V = –25 V
L = 100 µH
duty < 0.1 %
Rg > 50
AP
DD
Ω
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50Ω
Vin
-15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
Vin Monitor
D.U.T.
Vin
-10 V
R
L
V
= –30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50Ω
90%
10%
t
f
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
Channel Temperature Tch (°C)
Repetive Avalanche Energy E (mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
Avalanche Waveform
Switching Time Waveform
Avalanche Test Circuit
Switching Time Test Circuit
HAT3008R/HAT3008RJ
13
10 µ 100 µ 1 m 10 m 100 m 1 10 100 1000 10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance
s (t)
γ
DM
P
PW
T
D = PW
T
ch – f(t) = s (t) • ch – f
ch – f = 125 °C/W, Ta = 25 °C
θ γ θ
θ
When using the glass epoxy board
(FR4 40x40x1.6 mm)
10 µ 100 µ 1 m 10 m 100 m 1 10 100 1000 10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance
s (t)
γ
DM
P
PW
T
D = PW
T
ch – f(t) = s (t) • ch – f
ch – f = 166 °C/W, Ta = 25 °C
θ γ θ
θ
When using the glass epoxy board
(FR4 40x40x1.6 mm)
HAT3008R/HAT3008RJ
14
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
FP-8DA
Conforms
—
0.085 g
*Dimension including the plating thickness
Base material dimension
1.75 Max
4.90
0.25
0.15
0° – 8°
M
85
14
1.27
3.95
0.40 ± 0.06
*0.42 ± 0.08
5.3 Max
0.75 Max
0.14+ 0.11
– 0.04
0.20 ± 0.03
*0.22 ± 0.03
0.60+ 0.67
– 0.20
6.10+ 0.10
– 0.30 1.08
As of January, 2001
Unit: mm
HAT3008R/HAT3008RJ
15
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straβe 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
Colophon 2.0
