To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. 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HAT3008R/HAT3008RJ Silicon N/P Channel Power MOS FET High Speed Power Switching ADE-208-536B (Z) 3rd. Edition Feb. 1999 Features * * * * For Automotive Application ( at Type Code "J ") Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP-8 8 5 7 6 3 1 2 4 5 6 D D 7 8 D D 4 G 2 G S1 S3 Nch Pch 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain HAT3008R/HAT3008RJ Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Nch Pch Drain to source voltage VDSS 60 - 60 V Gate to source voltage VGSS 20 20 V Drain current ID 5 - 3.5 A 40 - 28 A Note1 Drain peak current I D(pulse) Body-drain diode I DR 5 - 3.5 A I AP Note4 -- -- -- 5 - 3.5 A -- -- -- reverse drain current Avalanche current HAT3008R HAT3008RJ Avalanche energy HAT3008R EAR Note4 HAT3008RJ 2.14 1.05 mJ Pch Note2 2 2 W Channel dissipation Pch Note3 3 3 W Channel temperature Tch 150 150 C Storage temperature Tstg - 55 to + 150 -55 to + 150 C Channel dissipation Note: 2 1. 2. 3. 4. PW 10s, duty cycle 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Value at Tch=25C, Rg50 HAT3008R/HAT3008RJ Electrical Characteristics (Ta = 25C) ( N Channel ) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 -- -- V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100 A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16 V, VDS = 0 Zero gate voltage HAT3008R I DSS -- -- 1 A VDS = 60 V, VGS = 0 drain current HAT3008RJ I DSS -- -- 0.1 A Zero gate voltage HAT3008R I DSS -- -- -- A VDS = 48 V, VGS = 0 drain current HAT3008RJ I DSS -- -- 10 A Ta = 125C Gate to source cutoff voltage VGS(off) 1.2 -- 2.2 V VDS = 10 V, I D = 1 mA Static drain to source on state RDS(on) -- 0.043 0.058 I D = 3 A, VGS = 10 V Note4 resistance RDS(on) -- 0.056 0.084 I D = 3 A, VGS = 4 V Note4 Forward transfer admittance |yfs| 6 9 -- S I D = 3 A, VDS = 10 V Note4 Input capacitance Ciss -- 520 -- pF VDS = 10 V Output capacitance Coss -- 270 -- pF VGS = 0 Reverse transfer capacitance Crss -- 100 -- pF f = 1MHz Turn-on delay time t d(on) -- 11 -- ns VGS =10 V, ID = 3 A Rise time tr -- 40 -- ns VDD 30 V Turn-off delay time t d(off) -- 110 -- ns Fall time tf -- 80 -- ns Body-drain diode forward voltage VDF -- 0.84 1.1 V IF = 5 A, VGS = 0 Note4 Body-drain diode reverse recovery time t rr -- 40 -- ns IF =5 A, VGS = 0 diF/ dt = 50 A/s Note: 5. Pulse test 3 HAT3008R/HAT3008RJ ( P Channel ) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS - 60 -- -- V I D = - 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100 A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16 V, VDS = 0 Zero gate voltage HAT3008R I DSS -- -- -1 A VDS = - 60 V, VGS = 0 drain current HAT3008RJ I DSS -- -- -0.1 A Zero gate voltage HAT3008R I DSS -- -- -- A VDS = - 48 V, VGS = 0 drain current HAT3008RJ I DSS -- -- -10 A Ta = 125C Gate to source cutoff voltage VGS(off) -1.2 -- -2.2 V VDS = - 10 V, I D = - 1mA Static drain to source on state RDS(on) -- 0.12 0.15 I D = - 2 A, VGS = - 10 V Note4 resistance RDS(on) -- 0.16 0.23 I D = - 2 A, VGS = - 4 V Note4 Forward transfer admittance |yfs| 3 4.5 -- S I D = - 2 A, VDS = -10 V Note4 Input capacitance Ciss -- 600 -- pF VDS = -10 V Output capacitance Coss -- 290 -- pF VGS = 0 Reverse transfer capacitance Crss -- 75 -- pF f = 1MHz Turn-on delay time t d(on) -- 11 -- ns VGS = -10 V, ID = - 2 A Rise time tr -- 30 -- ns VDD - 30 V Turn-off delay time t d(off) -- 100 -- ns Fall time tf -- 55 -- ns Body-drain diode forward voltage VDF -- - 0.98 - 1.28 V IF = - 3.5 A, VGS = 0 Note4 Body-drain diode reverse recovery time t rr -- 70 IF = - 3.5 A, VGS = 0 diF/ dt = 50 A/s Note: 4 5. Pulse test -- ns HAT3008R/HAT3008RJ Main Characteristics ( N Channel ) Power vs. Temperature Derating Maximum Safe Operation Area 100 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 10 s I D (A) ive Dr 2.0 Op er ion ive at 0 Dr er 1.0 Op 1 50 30 at ion 150 Ambient Temperature 200 Ta (C) 1 Op 10 s ms (1 sh ot at ) s) Ta = 25 C 1 shot pulse 0.01 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Typical Transfer Characteristics 10 Pulse Test 4 2.5 V 2 (A) 3V V DS = 10 V Pulse Test ID 10 V 4V 3.5 V Drain Current I D (A) Drain Current DC = s m ion 0.3 Operation in (P this area is W N < ote 0.1 limited by R DS(on) 10 5 Typical Output Characteristics 6 PW 1 er 10 8 0 3 0.03 100 10 10 Drain Current 3.0 2 Channel Dissipation Pch (W) 4.0 8 6 25C 4 Tc = 75C -25C 2 VGS = 2 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 5 HAT3008R/HAT3008RJ 0.4 0.3 ID=5A 0.2 Static Drain to Source on State Resistance R DS(on) ( ) 2A 1A 12 4 8 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 1, 2 A 0.12 ID=5A 0.08 V GS = 4 V 1, 2, 5 A 0.04 10 V 0 -40 Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.5 0.2 0.1 VGS = 4 V 0.05 0.1 0 6 Pulse Test 0 40 80 120 160 Case Temperature Tc (C) 10 V 0.02 0.01 0.1 0.3 1 3 Drain Current 10 30 I D (A) 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) 0.5 Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 20 V DS = 10 V Pulse Test Tc = -25 C 10 5 25 C 75 C 2 1 0.5 0.1 0.2 1 2 5 0.5 Drain Current I D (A) 10 HAT3008R/HAT3008RJ Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 2000 di / dt = 50 A / s V GS = 0, Ta = 25 C 200 1000 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 100 50 20 10 Coss 100 50 Crss 0 V GS 40 20 0 V DS 12 V DD = 10 V 25 V 50 V V DD = 50 V 25 V 10 V 8 16 24 32 Gate Charge Qg (nc) 8 4 0 40 20 30 40 50 Switching Characteristics 300 Switching Time t (ns) 16 1000 V GS (V) I D = 5A 10 Drain to Source Voltage V DS (V) Gate to Source Voltage 20 80 60 VGS = 0 f = 1 MHz 10 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) Dynamic Input Characteristics 100 V DS (V) 200 20 5 0.1 Drain to Source Voltage Ciss 500 t d(off) 100 tf 30 tr t d(on) 10 3 1 0.1 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 0.2 1 0.5 Drain Current 5 2 I D (A) 10 7 HAT3008R/HAT3008RJ Maximun Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) Reverse Drain Current I DR (A) 10 10 V 8 5V 6 V GS = 0, -5 V 4 2 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 2.5 I AP = 5 A V DD = 25 V L = 100 H duty < 0.1 % Rg > 50 2.0 1.5 1.0 0.5 0 25 50 V SD (V) 100 125 Avalanche Waveform EAR = L 1 2 * L * I AP * 2 VDSS VDSS - V DD I AP Monitor V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) 8 150 Channel Temperature Tch (C) Avalanche Test Circuit V DS Monitor 75 tr 10% 90% td(off) tf HAT3008R/HAT3008RJ ( P Channel ) Power vs. Temperature Derating -100 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s I D (A) Pch (W) 4.0 3.0 Maximum Safe Operation Area -30 10 s -10 10 PW Drain Current 2 Dr 2.0 ive 1 1.0 0 ion at er Op Channel Dissipation -3 Dr ive Op er -0.3 -0.1 DC = ion -0.03 100 150 Ambient Temperature 200 10 Op ms er at ion Operation in (P this area is W N < ote limited by R DS(on) 1 Ta = 25 C 1 shot pulse -0.01 -0.1 -0.3 -1 -3 -10 Drain to Source Voltage Ta (C) s m s 0 at 50 -1 0 1 s) 6 -30 -100 V DS (V) Note 6 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Transfer Characteristics Typical Output Characteristics -10 V -5 V -4 V -3.5 V V DS = 10 V Pulse Test (A) -8 -10 -8 ID Pulse Test -6 -3 V -4 -2 0 VGS = -2.5 V -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) Drain Current Drain Current I D (A) -10 -6 -4 Tc = 75 C 25 C -2 -25 C 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 9 HAT3008R/HAT3008RJ Drain to Source Saturation Voltage V DS(on) (V) -0.5 Pulse Test -0.4 -0.3 I D = -2 A -0.2 Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 VGS = -4 V 0.1 -10 V 0.05 -1 A -0.1 -0.5 A 0.02 0.01 10 -4 -8 -12 Gate to Source Voltage -16 -20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 I D = -2 A 0.3 -1 A -0.5 A 0.2 0.1 0 -40 V GS = -4 V -10 V -2 A -0.5, -1 A 0 40 80 120 160 Case Temperature Tc (C) -0.1 -0.3 -1 -3 Drain Current Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance R DS(on) ( ) 0 20 10 5 -10 -30 -100 I D (A) Forward Transfer Admittance vs. Drain Current V DS = 10 V Pulse Test Ta = -25 C 25 C 2 75 C 1 0.5 0.2 -0.5 -1 -2 -5 -0.1 -0.2 Drain Current I D (A) -10 HAT3008R/HAT3008RJ Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 2000 200 100 50 20 Ciss 500 200 50 Crss di / dt = 50 A / s VGS = 0, Ta = 25 C 10 20 -60 -80 -100 0 -4 -8 V GS V DS -12 V DD = -50 V -25 V -10 V 32 8 16 24 Gate Charge Qg (nc) -16 -20 40 Switching Time t (ns) I D = -3.5 A -40 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) 1000 0 V GS (V) -20 0 Switching Characteristics Dynamic Input Characteristics V DD = -10 V -25 V -50 V 10 Gate to Source Voltage 0 V DS (V) Coss 100 5 -0.1 -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Current I DR (A) Drain to Source Voltage VGS = 0 f = 1 MHz 1000 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 V GS = -10 V, V DD = -30 V Pw = 5 s, duty < 1 % 300 t d(off) 100 tf 30 tr t d(on) 10 3 1 -0.1 -0.2 -0.5 -1 -2 -5 Drain Current I D (A) -10 11 HAT3008R/HAT3008RJ Maximun Avalanche Energy vs. Channel Temperature Derating Repetive Avalanche Energy E AR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) -10 -8 -6 -10 V V GS = 0, 5 V -4 -5 V -2 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 Source to Drain Voltage 2.5 I AP = -3.5 A V DD = -25 V L = 100 H duty < 0.1 % Rg > 50 2.0 1.5 1.0 0.5 -2.0 0 25 50 75 100 125 150 Channel Temperature Tch (C) V SD (V) Avalanche Waveform Avalanche Test Circuit EAR = L V DS Monitor 1 2 * L * I AP * 2 VDSS VDSS - V DD I AP Monitor V (BR)DSS I AP Rg V DS VDD D. U. T ID Vin -15 V 50 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor Vin 10% D.U.T. RL 90% Vin -10 V 50 V DD = -30 V Vout td(on) 12 90% 90% 10% 10% tr td(off) tf HAT3008R/HAT3008RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) Normalized Transient Thermal Impedance s (t) 10 1 D=1 0.5 0.1 0.1 0.05 0.2 0.02 0.01 ch - f(t) = s (t) * ch - f ch - f = 125 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) 0.01 e uls p ot PDM h 0.001 1s D= PW T PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance s (t) 10 1 Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) D=1 0.5 0.2 0.1 0.01 0.1 0.05 0.02 ch - f(t) = s (t) * ch - f ch - f = 166 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) 0.01 0.001 t ho lse pu PDM D= 1s PW T PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) 13 HAT3008R/HAT3008RJ Package Dimensions As of January, 2001 Unit: mm 3.95 4.90 5.3 Max 5 8 *0.22 0.03 0.20 0.03 4 1.75 Max 1 0.75 Max + 0.10 6.10 - 0.30 1.08 0.14 - 0.04 *0.42 0.08 0.40 0.06 + 0.11 0 - 8 1.27 + 0.67 0.60 - 0.20 0.15 0.25 M *Dimension including the plating thickness Base material dimension 14 Hitachi Code JEDEC EIAJ Mass (reference value) FP-8DA Conforms -- 0.085 g HAT3008R/HAT3008RJ Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 15