TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/562
T4-LDS-0113 Rev. 2 (101520) Page 1 of 3
DEVICES LEVELS
2N6804 JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Drain – Source Voltage VDS -100 Vdc
Gate – Source Voltage VGS ± 20 Vdc
Continuous Drain Current
T
C = +25°C ID1 -11 Adc
Continuous Drain Current
T
C = +100°C ID2 -7 Adc
Max. Power Dissipation
T
C = +25°C Ptl 75
(1) W
Drain to Source On State Resistance Rds(on) 0.3
(2) Ω
Operating & Storage Temperature Top, Tstg -55 to +150 °C
Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = -7A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc V(BR)DSS -100 Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = -0.25mA
VDS ≥ VGS, ID = -0.25mA, Tj = +125°C
VDS ≥ VGS, ID = -0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
-2.0
-1.0
-4.0
-5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, T
= +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = -80V
VGS = 0V, VDS = -80V, Tj = +125°C
IDSS1
IDSS2
-25
-0.25
µAdc
mAdc
Static Drain-Source On-State Resistance
VGS = -10V, ID = -7A pulsed
VGS = -10V, ID = -11A pulsed
Tj = +125°C
VGS = -10V, ID = -7A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0.3
0.36
0.55
Ω
Ω
Ω
Diode Forward Voltage
VGS = 0V, ID = -11A pulsed VSD -4.7 Vdc
2N6804
TO-204AA (TO-3)