DS30448 Rev. 2 - 2 1 of 3 2N7002V/VA
www.diodes.com ã Diodes Incorporated
2N7002V/VA
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·Dual N-Channel MOSFET
·Low On-Resistance
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Low Input/Output Leakage
·Ultra-Small Surface Mount Package
·Lead Free Plating
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS £ 1.0MWVDGR 60 V
Gate-Source Voltage (Note 3) Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 3) Continuous ID280 mA
Drain Current (Note 3) Pulsed IDM 1.5 A
Total Power Dissipation Pd150 mW
Thermal Resistance, Junction to Ambient RqJA 833 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
A
M
L
BC
H
K
G
D
KAx YM
Mechanical Data
S1
D1
D2
S2
G1
G2
·Case: SOT-563, Molded Plastic
·Case Material - UL Flammability Rating 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
·Method 208
·Terminals: Finish - Matte Tin (Note 2) Solderable
per MIL-STD-202, Method 208
·Terminal Connections: See Diagram
·Marking (See Page 2): KAS & KAY
·Ordering & Date Code Information: See Page 2
·Weight: 0.006 grams (approx.)
SOT-563
Dim Min Max Typ
A0.15 0.30 0.25
B1.10 1.25 1.20
C1.55 1.70 1.60
D0.50
G0.90 1.10 1.00
H1.50 1.70 1.60
K0.56 0.60 0.60
L0.10 0.30 0.20
M0.10 0.18 0.11
All Dimensions in mm
Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. If lead-bearing terminal plating is required, please contact your Diodes Inc. sales representative for availability and minimum
order details.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
TCUDORPWEN
2N7002V
(KAS Marking Code)
G1
D1
D2
S2
S1
G2
2N7002VA
(KAY Marking Code)
SEE NOTE 1
DS30448 Rev. 2 - 2 2 of 3 2N7002V/VA
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage BVDSS 60 70 ¾VVGS = 0V, ID = 10mA
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C IDSS ¾¾
1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ¾¾±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(th) 1.0 ¾2.5 V VDS = VGS, ID = 250mA
Satic Drain-Source On-Resistance RDS (ON) ¾
¾
¾
¾
7.5
13.5 WVGS = 5V, ID = 0.05A,
VGS = 10V, ID = 0.5A, Tj= 125°C
On-State Drain Current ID(ON) 0.5 1.0 ¾AVGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ¾¾mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾¾50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾¾25 pF
Reverse Transfer Capacitance Crss ¾¾5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾¾20 ns VDD = 30V, ID= 0.2A,
RL = 150W,V
GEN = 10V,
RGEN = 25W
Turn-Off Delay Time tD(OFF) ¾¾20 ns
Ordering Information (Note 5)
Device Packaging Shipping
2N7002V-7 SOT-563 3000/Tape & Reel
2N7002VA-7 SOT-563 3000/Tape & Reel
Notes: 4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KAS = 2N7002V Product Type Marking Code
(See Note 1)
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
Date Code Key
Year 2004 2005 2006 2007 2008 2009
Code RST U VW
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
TCUDORPWEN
KAS YM
S1
D2G1
D1
S2G2
KAY = 2N7002VA Product Type Marking Code
(See Note 1)
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
KAY YM
S1
D2G1
D1
S2
G2
DS30448 Rev. 2 - 2 3 of 3 2N7002V/VA
www.diodes.com
-50 050100150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Derating Curve - Total
P,P
O
WER DISSIPATI
O
N (mW)
d
TCUDORPWEN
