FDV303N ene pe FAIRCHILD Leeper ree SEMICONDUCTOR m FDV303N DigitalFET, N-Channel General Description These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at law gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. Mark:303 SOT-23 Absolute Maximum Ratings T, = 25C unless other wise noted August 1997 Features 25 V, 0.68 A continuous, 2 A Peak. Rogcon) = 0.45 Q @ Veg = 4.5 V Rogow = 0.6 Q @ Vag= 2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. Vici) < 1-5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Alternative to TNO200T and TNO201T. A Symbol | Parameter FDV303N Units Voss Drain-Source Voltage, Power Supply Voltage 25 Voss Gate-Source Voltage, V,, 8 Vv I, Drain/Output Current - Continuous 0.68 A - Pulsed 2 P, Maximum Power Dissipation 0.35 Ty. Tere Operating and Storage Temperature Range -55 to 150 Cc ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100pf/ 1500 Ohm) THERMAL CHARACTERISTICS R | Thermal Resistance, Junction-to-Ambient 357 CW 5-82 FDV303N Rev.D1Electrical Characteristics (1, = 25C unless otherwise noted ) a Symbol! | Parameter Conditions | Min | Typ | Max Units Ss OFF CHARACTERISTICS oS BV oss Drain-Source Breakdown Voltage Veg FOV, |= 250 HA 25 v S ABV ,9/AT, Breakdown Voltage Temp. Coefficient |,= 250 A Referenced to 25C 26 mv /C loss Zero Gate Voltage Drain Current Vo5 =20V, Vog= OV 1 pA T, =55C 10 pA loss Gate - Body Leakage Current Vog =8V, Vag= OV 100 nA ON CHARACTERISTICS (note) AV esnfAT, Gate Threshold Voltage Temp. Coefficient |,= 250 u A Referenced to 25C -2.6 mV /C Vesey Gate Threshold Voltage Vog = Vege Ip = 250 DA 065 | 08 15 Vv Rosiony Static Drain-Source On-Resistance Veg =4.5V, 1, =0.5A 0.33 | 045 Q T, =125C 0.52 | 08 Veg =2.7V, 1,=0.2A 044 | 06 levow) On-State Drain Current Vog = 2.7 V, Vag =5V 05 Ors Forward Transconductance Vag =5V, = 0.5A 1.45 s DYNAMIC CHARACTERISTICS om Input Capacitance Vog = 10V, Veg = OV, 50 pF Cors Output Capacitance f= 1.0MHz 28 pF C.. Reverse Transfer Capacitance 9 pF SWITCHING CHARACTERISTICS ote) bojon) Tum - On Delay Time Von =8V, |, =0.5A, 3 6 ns t Tum - On Rise Time Vos =4.5V, Ree = 50.0 85 18 ns toy Tum - Off Delay Time 17 30 ns t Tum - Off Fall Time 13 25 ns Q, Total Gate Charge Vog =5V, 1, =0.5A, 1.64 2.3 nc Q,. Gate-Source Charge Vos = 4.5 V 0.38 nc Qy Gate-Drain Charge 0.45 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I, Maximum Continuous Drain-Source Diode Forward Current 03 A Vep Drain-Source Diode Forward Voitage Veg = OV, I = O.5A ote) 0.83 ) 12 Vv Note: Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%. 5-83 FDV303N Rev.D1FDV303N Typical Electrical Characteristics Rps(ON) NORMALIZED Ip , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE Ip, DRAIN CURRENT (A) iN] 2 o S Do 2 w 0.5 1 V5 2 Vog DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. T 7 [p=0.5 A | L Veg 2 4.5 V a SF LY a -50 25 0 25 50 75 100 125 150 T, . JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. Vg = 5.0V T T= -55 fx S Oo 128C 2 a 2 n Uf 2 iy ZZ ! 08 1 15 2 25 Vg: GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0 0.2 04 0.6 08 1 12 Ip , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. R DS(on), ON-RESISTANCE (OHM) 1 15 2 2.5 3 35 4 45 5 Vgs . GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-To- Source Voltage. gg= OV Ty = 125C O41 0.01 0.001 Is , REVERSE DRAIN CURRENT (A) 0.0001 0 0.2 0.4 06 0.8 1 12 Vgp | BODY DIODE FORWARD VOLTAGE (V} Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 5-84 FOV303N Rev.D1Typical Electrical And Thermal Characteristics 150 = 100 Ww Q ~ a S 50 > 3 Ww Zz oO Lf 5 5 3 z 2 w 8 E : & 10 @ oO > 5 0.1 OS 1 2 5 10 25 0 04 0.8 1.2 16 2 Vgg- DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 5 5 3 4 SINGLE PULSE z=, ResA =357 CW bE _ Ta =25C g =3 03 x 3 2 Z 0.1 a? x . Ves= 4.5V a SINGLE PULSE 1 ~ 0.03 R aA=357CW Ta= 25C ! 9 aot tt: a 0.001 0.01 04 1 10 100 300 O41 02 os | 2 5 10 20 o SINGLE PULSE TIME (SEC) Vos: ODRAI N-SOURCE VOLTAGE (V} Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 8 Zz 05 we 20 i Eq oF 02 Roualty=rt) * R Ow eJA QA woe 01 R gua = 357 CW uz as 0.05 SE 002 Ptpk) | eae t 0.01 ae ty 1 x -},! 2 a 0.005 ty wm vi _ . 4 eg Ty-T =P R gad F 0.002 Duty Cycie, D = t, ft, 0.001. 0.0001 0.001 0.01 01 1 10 100 300 ty, TIME (sec) Figure 11. Transient Thermal Response Curve. 5-85 FDV303N Rev.D1 NeodeAdsa