CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
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Rev. 1.0, 20-Sep-11 1Document Number: 82387
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Optocoupler, Phototransistor Output, Very High Isolation Voltage
DESCRIPTION
The CNY6XST, the high isolation voltage SMD version
optocouplers consist of a phototransistor optically coupled
to a gallium arsenide infrared-emitting diode in a 4 pin
plastic package.
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
DIN EN 60747-5-2 (VDE 0884)
Optocoupler for electrical safety requirements
IEC 60065
Safety for mains-operated electronic and related
household apparatus
VDE 0160
Electronic equipment for electrical power installation
FEATURES
Rated recurring peak voltage (repetitive)
VIORM = 1450 Vpeak
Thickness through insulation 3 mm
Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI 475
Moisture sensitivity level MSL4
- Follow defined storage and soldering
requirements
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
Solar and wind power diagnostic, monitoring, and
communication equipment
Welding equipment
High voltage motors
Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I to IV at mains voltage 300 V
- for appl. class I to IV at mains voltage 600 V
- for appl. class I to III at mains voltage 1000 V
according to DIN EN 60747-5-2 (VDE 0884)
AGENCY APPROVALS
DIN EN 60747-5-2 (VDE 0884) (pending)
UL1577, file no. E76222 system code H, J, and K
(pending)
VDE related features:
- rated impulse voltage (transient overvoltage),
VIOTM = 12 kVpeak
- isolation test voltage (partial discharge test voltage),
Vpd = 2.8 kVpeak
C
E
A
C
Top View
17187-5
V
DE
17187-6
CNY65ST
CNY64ST
ORDERING INFORMATION
CNY6 #XXXST
PART NUMBER PACKAGE
OPTION
CTR BIN
AGENCY CERTIFIED/PACKAGE CTR (%)
5 mA
UL, VDE 50 to 300 50 to 150 80 to 240 100 to 300
SMD-4 HV, 400 mil high isolation distance CNY64ST CNY64AYST CNY64ABST CNY64AGRST
SMD-4 HV, 600 mil high isolation distance CNY65ST CNY65AYST CNY65ABST CNY65AGRST
10.16 mm 15.24 mm
CNY64ST CNY65ST
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR5V
Forward current IF75 mA
Forward surge current tp 10 μs IFSM 1.5 A
Power dissipation Pdiss 120 mW
Junction temperature Tj100 °C
OUTPUT
Collector emitter voltage VCEO 32 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp 10 ms ICM 100 mA
Power dissipation Pdiss 130 mW
Junction temperature Tj100 °C
COUPLER
AC isolation test voltage CNY64AxxxST t = 1 min VISO 8.2 kVRMS
DC isolation test voltage CNY65AxxxST t = 1 s VISO 13.9 kV
Total power dissipation Ptot 250 mW
Ambient temperature range Tamb - 55 to + 85 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature 2 mm from case, 10 s Tsld 260 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF1.32 1.6 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
OUTPUT
Collector emitter voltage IC = 1 mA VCEO 32 V
Emitter collector voltage IE = 100 μA VECO 7V
Collector emitter leakage current VCE = 20 V, IF = 0 mA ICEO 200 nA
COUPLER
Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V
Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ωfc110 kHz
Coupling capacitance f = 1 MHz Ck0.3 pF
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
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Rev. 1.0, 20-Sep-11 3Document Number: 82387
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Note
According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Safety Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IFVCE = 5 V, IF = 5 mA
CNY64ST CTR 50 300 %
CNY65ST CTR 50 300 %
CNY64AYST CTR 50 150 %
CNY65AYST CTR 50 150 %
CNY64ABST CTR 80 240 %
CNY65ABST CTR 80 240 %
CNY64AGRST CTR 100 300 %
CNY65AGRST CTR 100 300 %
SAFETY AND INSULATION PARAMETERS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test 100 %, ttest = 1 s Vpd 2.8 kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2) Vpd 2.2 kV
Insulation resistance
VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
VIO = 500 V, Tamb = 150 °C
(construction test only) RIO 109Ω
Forward current Isi 120 mA
Power dissipation Pso 250 mW
Rated impulse voltage VIOTM 12 kV
Safety temperature Tsi 150 °C
Tracking resistance
(comparative tracking index) Insulation group IVa CTI 475
Minimum external tracking
(creepage distance)
Measured from
input pins to output pins
CNY64ST 9.5 mm
CNY65ST 14 mm
0
25
50
75
100
125
150
175
200
225
250
0 25 50 75 100 125 150 175 200
T
amb
(°C)
22292
Pso (mW)
Isi (mA)
t
13930
t1
, t2 = 1 s to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
Vpd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s tstres
t3t4
t2
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
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Rev. 1.0, 20-Sep-11 4Document Number: 82387
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Fig. 3 - Test Circuit, Non-Saturated Operation
Fig. 4 - Test Circuit, Saturated Operation
Fig. 5 - Switching Times
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Delay time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) td2.6 μs
Rise time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) tr2.4 μs
Fall time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) tf2.7 μs
Storage time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) ts0.3 μs
Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) ton s
Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) toff s
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton 25 μs
Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff 42.5 μs
Channel I
Channel II
95 10900
R
G
= 50
t
p
t
p
= 50 µs
T= 0.01
+ 5 V
I
C
= 5 mA; adjusted through
input amplitude
I
F
0I
F
50 100
Oscilloscope
R
L
1 M
C
L
20 pF
Channel I
Channel II
95 10843
RG= 50 Ω
tp
tp= 50 µs
T= 0.01
+ 5 V
IC
IF
0
50 Ω1 kΩ
IF= 10 mA
Oscilloscope
RL
CL20 pF
1 MΩ
tpt
t
0
0
10 %
90 %
100 %
tr
td
ton
tstf
toff
IF
IC
tpPulse duration
tdDelay time
trRise time
ton (= td + tr) Turn-on time
tsStorage time
tfFall time
toff (= ts + tf) Turn-off time
96 11698
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
www.vishay.com Vishay Semiconductors
Rev. 1.0, 20-Sep-11 5Document Number: 82387
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS)
Fig. 9 - Collector Current vs. Collector Emitter Voltage
Fig. 10 - Leakage Current vs. Ambient Temperature
Fig. 11 - Normalized CTR (sat) vs. Ambient Temperature
0255075
0
40
80
120
200
240
280
100
Ptot - Total Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
160
Coupled device
Phototransistor
22293
IR-diode
VF - Forward Voltage (V)
IF - Forward Current (mA)
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Tamb = - 40 °C
Tamb = 0 °C
Tamb = 50 °C
Tamb = 75 °C
Tamb = 85 °C
Tamb = 25 °C
Tamb = - 55 °C
22508
I
C
- Collector Current (mA)
V
CE
- Collector Emitter Voltage (NS) (V)
0
5
10
15
20
25
30
35
40
45
024681012
I
F
= 30 mA
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
22509
IC - Collector Current (mA)
VCE - Collector Emitter Voltage (sat) (V)
0
5
10
15
20
25
30
0 0.1 0.2 0.3 0.4 0.5
IF = 25 mA
IF = 10 mA
IF = 5 mA
IF = 2 mA
IF = 1 mA
ICEO - Leakage Current (nA)
Tamb - Ambient Temperature (°C)
0.01
0.1
1
10
100
1000
- 55 - 35 - 15 5 25 45 65 85
IF = 0
VCE = 12 V
VCE = 24 V
VCE = 40 V
N
CTR
- Normalized CTR (sat)
T
amb
- Ambient Temperature (°C)
0
0.2
0.4
0.6
0.8
1.0
1.2
- 55 - 40 - 20 0 20 40 60 85
I
F
= 10 mA
I
F
= 5 mA
I
F
= 1 mA
V
CE
= 0.4 V
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
www.vishay.com Vishay Semiconductors
Rev. 1.0, 20-Sep-11 6Document Number: 82387
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Fig. 12 - Normalized CTR (NS) vs. Ambient Temperature
Fig. 13 - Normalized CTR (NS) vs. Forward Current
Fig. 14 - Normalized CTR (sat) vs. Forward Current
Fig. 15 - FCTR vs. Collector Current
Fig. 16 - FCTR vs. Phase Angle
Fig. 17 - Switching Time vs. Load Resistance
N
CTR
- Normalized CTR (NS)
T
amb
- Ambient Temperature (°C)
0
0.2
0.4
0.6
0.8
1.0
1.2
- 55 - 40 - 20 0 20 40 60 85
I
F
= 10 mA
I
F
= 5 mA
I
F
= 1 mA
V
CE
= 5 V
N
CTR
- Normalized CTR (sat)
I
F
- Forward Current (mA)
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1 1 10 100
Tamb = - 40 °C
Tamb = 0 °C
Tamb = 50 °C
Tamb = 75 °C
Tamb = 85 °C
VCE = 0.4 V
Tamb = 25 °C
Tamb = - 55 °C
22515
FCTR (kHz)
IC - Collector Current (mA)
1
10
100
1000
0.1 1 10 100
V
CE
= 5 V
22516
Phase (deg)
Frequency (kHz)
- 180
- 160
- 140
- 120
- 100
- 80
- 60
- 40
- 20
0
20
1 10 100 1000
V
CE
= 5 V
22517
t
on
, t
off
- Switching Time (μs)
R
L
- Load Resistance (kΩ)
0.1
1
10
100
1000
0.1 1 10 100
ton
toff
VCE = 5 V,
IF = 10 mA
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
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SOLDERING GUIDLINES
Soldering Condition
The CNY64AxST, CNY65AxST are lead (Pb)-free devices.
They are suitable for reflow soldering. However due to large
package size, the peak package body temperature should
not go above 245 °C.
Drypack
Devices are packed in moisture barrier bags (MBB) to
prevent moisture absorption during transportation and
storage. Each bag contains a desiccant bag.
Floor Life
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 4, according to J-STD-020.
Drying
In case of moisture absorption devices should be baked
before soldering according to the recommended conditions
shown below
48 h at 125 °C ± 5 °C, RH < 5%
(Not suitable for tape and reel)
In case the floor time has not exceeded 10 days the units
can be baked in tape and reel according to the following
conditions
168 h at 60 °C ± 5 °C, RH < 5 %
(Not suitable, if the floor time was exceeded by more than
10 days, or the allowed factory condition is exceeded)
PACKAGE DIMENSIONS in millimeters FOR CNY64AxxxST
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 120 s max. 100 s
217 °C
max. 20 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
max. 2 cycles allowed
22550
Cathode Emitter
Anode Collector
5.08 ± 0.4
9
15.9
5.08
Recommended footprint
specications
according to DIN
technical drawings
7.2 ± 0.2
14.4 ± 0.3
12.8 ± 0.2
0.5 ± 0.2
7.05 ± 0.4
6 ± 0.2
2.9
2.1 ± 0.5
0.4 ± 0.1
Leads coplanarity
0.1 max.
Z
Z 10:1
6.544-5406.01-4
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
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PACKAGE DIMENSIONS in millimeters FOR CNY65AxxxST
PACKAGE MARKING (example)
Note
The “T” at the end of the product designation is not marked on the package
17.8 ± 0.2
specications
according to DIN
technical drawings
19.4 ± 0.3
Leads coplanarity
0.1 max.
Recommended footprint
20.9
7.62
2.9
14
Z 10:1
0.4 ± 0.1
Cathode Emitter
Anode Collector
7.15 ± 0.4
6.1 ± 0.2
2.1 ± 0.5
7.62 ± 0.4
9.6 ± 0.2
0.5 ± 0.2
Z
6.544-5404.01-4
CNY65AY
V YWW 69
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
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TAPE DIMENSIONS in millimeters FOR CNY64AxxxST
TAPE DIMENSIONS in millimeters FOR CNY65AxxxST
Drawing-No.: 9.700-5375.01-4
Issue: 1; 23.05.11
specications
according to DIN
technical drawings
Leader (start) min. 400 mm without devices
Trailer (end) min. 200 mm without devices
Direction of feed
7.6
Ø 1.55 ± 0.05
2 ± 0.15 4 ± 0.1
Ø 2 min.
16 ± 0.1
0.4 ± 0.05
5.65
8
32 ± 0.3
14.2 ± 0.10
13.2
25.5
1.75 ± 0.1
Top cover
tape
Drawing-No.: 9.700-5376.01-4
Issue: 1; 23.05.11 specications
according to DIN
technical drawings
Leader (start) min. 400 mm without devices
Trailer (end) min. 200 mm without devices
Direction of feed
9.9
Ø 1.55 ± 0.05
2 ± 0.15 4 ± 0.1
Ø 2 min.16 ± 0.1
0.4 ± 0.05
5.65
8
32 ± 0.3
14.2 ± 0.10
18.1
25.5
1.75 ± 0.1
Top cover
tape
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
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REEL DIMENSIONS in millimeters
Drawing-No.: 9.800-5120.01-4
Issue: 1; 23.05.11
Leader and trailer tape:
Parts mounted
Empty trailer 200 mm min.
Empty leader 400 mm min.
Direction of pulling out
Unreel direction
Ø 60 min.
Ø Y
2 ± 0.5
Label posted here
Tape position
coming out from reel
Ø 13 ± 0.2
Ø 21 ± 0.8
100 mm min. with cover tape
Not indicated tolerances ± 0.1
Reel size "Y"
T: Ø 330 ± 2
32.4 + 2/0
38.4 max.
specications
according to DIN
technical drawings
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