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FDMS7680 N-Channel PowerTrench(R) MOSFET 30 V, 6.9 m Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 6.9 m at VGS = 10 V, ID = 14 A Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery. Applications IMVP Vcore Switching for Notebook MSL1 robust package design VRM Vcore Switching for Desktop and Server 100% UIL tested OringFET / Load Switch RoHS Compliant DC-DC Conversion Bottom Top S D D D S S Pin 1 S D G S D S D G D D Power 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Ratings 30 +/-20 Drain Current -Continuous (Package limited) ID TC = 25 C -Continuous (Silicon limited) TC = 25 C -Continuous TA = 25 C -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG Power Dissipation TC = 25 C Power Dissipation TA = 25 C Units V V 28 53 (Note 1a) 14 (Note 4) (Note 3) 29 80 33 (Note 1a) Operating and Storage Junction Temperature Range A 2.5 -55 to +150 mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient 3.7 (Note 1a) 50 C/W Package Marking and Ordering Information Device Marking FDMS7680 Device FDMS7680 (c)2012 Fairchild Semiconductor Corporation FDMS7680 Rev.C3 Package Power 56 1 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS7680 N-Channel PowerTrench(R) MOSFET October 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 A IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 30 V 13 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.25 1.9 -6 mV/C VGS = 10 V , ID = 14 A 5.6 VGS = 4.5 V, ID = 11 A 8.0 11 VGS = 10 V, ID = 14 A, TJ = 125 C 7.3 10.1 VDS = 5 V, ID = 14 A 85 6.9 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 0.1 1390 1850 pF 430 575 pF 60 85 pF 0.9 2.0 10 20 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg VDD = 15 V, ID = 14 A, VGS = 10 V, RGEN = 6 4 10 ns 21 34 ns 3 10 ns Total Gate Charge VGS = 0 V to 10 V 20 28 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 14 A 9 13 4.6 nC 2.3 nC Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 VGS = 0 V, IS = 14 A (Note 2) 0.83 1.3 IF = 14 A, di/dt = 100 A/s IF = 14 A, di/dt = 300 A/s V 24 39 ns 8 15 nC 20 36 ns 15 27 nC Notes: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50 C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 C, L = 0.3 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 4. Pulse Id refers to Figure.11 Forward Bias Safe Operation Area. (c)2012 Fairchild Semiconductor Corporation FDMS7680 Rev.C3 2 www.fairchildsemi.com FDMS7680 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted 80 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 8 ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V 60 VGS = 3.5 V VGS = 4 V 40 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 20 VGS = 3 V 0 0 1 2 VGS = 3 V 6 5 VGS = 3.5 V 4 VGS = 4 V 3 2 1 VGS = 4.5 V 0 3 0 20 40 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 80 25 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 SOURCE ON-RESISTANCE (m) ID = 14 A VGS = 10 V rDS(on), DRAIN TO NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 ID = 14 A PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 20 15 TJ = 125 oC 10 5 TJ = 25 oC 0 -50 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 80 IS, REVERSE DRAIN CURRENT (A) 100 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 7 60 VDS = 5 V TJ = 150 oC 40 TJ = 25 oC 20 TJ = -55 oC 0 1 2 3 4 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.2 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics (c)2012 Fairchild Semiconductor Corporation FDMS7680 Rev.C3 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS7680 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 3000 VDD = 15 V ID = 14 A Ciss 8 1000 VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V 6 4 Coss 100 f = 1 MHz VGS = 0 V 0 0 4 8 12 16 20 30 0.1 24 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 50 ID, DRAIN CURRENT (A) 60 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 50 40 30 VGS = 10 V 20 Limited by Package VGS = 4.5 V 10 o RJC = 3.7 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 500 100000 P(PK) , PEAK TRANSIENT POWER (W) 100 10 us 10 THIS AREA IS LIMITED BY rDS(on) 100 us 1 ms 1 10 ms SINGLE PULSE TJ = MAX RATED 100 ms/DC RJC = 3.7 o C/W CURVE BENT TO MEASURED DATA TC = 25 oC 0.01 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 0.1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) I D , DRAIN CURRENT (A) 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) IAS, AVALANCHE CURRENT (A) Crss 2 FDMS7680 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) SINGLE PULSE RJC = 3.7 oC/W 1000 TC = 25 oC 100 0.1 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area (c)2012 Fairchild Semiconductor Corporation FDMS7680 Rev.C3 10000 4 www.fairchildsemi.com r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: ZJC(t) = r(t) x RJC 0.01 SINGLE PULSE RJC = 3.7 C/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 o R JC = 3.7 C/W 0.001 -6 10 10 -5 10 -4 -3 10 -2 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve Figure 15. 16 12 CURRENT (A) di/dt = 300 A/s 8 4 0 -4 0 20 40 60 80 100 120 TIME (ns) Figure 14. Body Diode Reverse Recovery Characteristics (c)2012 Fairchild Semiconductor Corporation FDMS7680 Rev.C3 5 www.fairchildsemi.com FDMS7680 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted PQFN8 5X6, 1.27P CASE 483AE ISSUE A 5.10 PKG CL 8 5.10 3.91 A SEE DETAIL B B 5 1.27 8 7 6 5 0.77 4.52 PKG CL 5.85 5.65 6.15 3.75 6.61 KEEP OUT AREA 1.27 1 4 1 TOP VIEW 2 3 4 0.61 1.27 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE SEE DETAIL C 5.00 4.80 LAND PATTERN RECOMMENDATION 0.35 0.15 0.10 C 0.05 0.00 SIDE VIEW 8X 0.08 C 5.20 4.80 1.10 0.90 3.81 0.35 0.15 DETAIL C SCALE: 2:1 1.27 0.51 (8X) 0.31 (0.34) 0.10 1 2 3 C A B 4 0.76 0.51 (0.52) 6.25 5.90 3.48+0.30 -0.10 (0.50) (0.30) (2X) 8 0.20+0.10 -0.15 (8X) 7 6 3.96 3.61 BOTTOM VIEW 0.30 0.05 5 C SEATING PLANE DETAIL B SCALE: 2:1 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA,. B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E. IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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