GF1A - GF1M GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratin
at 25 °C ambient tem
erature unless otherwise s
ecifi
.
Sin
le
hase, half wave, 60 Hz, resistive or inductive loa
For ca
acitive load, derate current b
20
SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT
Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Current Ta = 75 °CIF(AV) 1.0 A
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 Amp. VF1.0 V
Maximum DC Reverse Current Ta = 25 °CIR5.0 μA
at rated DC Blocking Voltage Ta = 100 °CIR(H) 50 μA
Typical Reverse Recovery Time ( Note 1 ) Trr 2.0 μs
Typical Junction Capacitance (Note2) CJ8pF
Junction Temperature Range TJ - 65 to + 150 °C
Storage Temperature Range TSTG - 65 to + 150 °C
Notes :
(1) Reverse Recovery Test Conditions : I F = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2 Rev. 03 : October 14, 2005
RATING
IFSM 30 A
2.0 ± 0.2
2.1 ± 0.2
SMA (DO-214AC)
1.2
0.2
5.0 ± 0.15
4.5 ± 0.15
2.6 ± 0.15
Dimensions in millimeter
1.1 ± 0.3