MJD32-1 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 



DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching applications.

•Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

•Straight Lead Version in Plastic Sleeves (“–1” Suffix)

•Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

•Electrically Similar to Popular TIP31 and TIP32 Series

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

MJD31

MJD32

ÎÎÎÎ

MJD31C

MJD32C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.12

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation* @ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎ

1.56

0.012

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎ

8.3

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient*

ÎÎÎÎ

RθJA

ÎÎÎÎÎÎÎ

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Lead Temperature for Soldering Purposes

ÎÎÎÎ

ÎÎÎÎÎÎÎ

260

ÎÎÎ

*These ratings are applicable when surface mounted on the minimum pad size recommended.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJD31/D

 Motorola, Inc. 1995





CASE 369A–13

SILICON

POWER TRANSISTORS

3 AMPERES

40 AND 100 VOLTS

15 WATTS

*Motorola Preferred Device

CASE 369–07

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

0.243

6.172

0.063

1.6

0.118

3.0

0.07

1.8 0.165

4.191

0.190

4.826

inches





 

REV 1

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Min

ÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0) MJD31, MJD32

MJD31C, MJD32C

ÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎ

100

ÎÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0) MJD31, MJD32

(VCE = 60 Vdc, IB = 0) MJD31C, MJD32C

ÎÎÎÎÎÎ

ICEO

ÎÎÎÎÎ

—

ÎÎÎÎÎ

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ÎÎÎÎÎÎ

ICES

ÎÎÎÎÎ

—

ÎÎÎÎÎ

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ÎÎÎÎÎÎ

IEBO

ÎÎÎÎÎ

—

ÎÎÎÎÎ

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

ÎÎÎÎÎÎ

hFE

ÎÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 3 Adc, IB = 375 mAdc)

ÎÎÎÎÎÎ

VCE(sat)

ÎÎÎÎÎ

—

ÎÎÎÎÎ

1.2

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 3 Adc, VCE = 4 Vdc)

ÎÎÎÎÎÎ

VBE(on)

ÎÎÎÎÎ

—

ÎÎÎÎÎ

1.8

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain — Bandwidth Product (2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

ÎÎÎÎÎÎ

ÎÎÎÎÎ

—

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

ÎÎÎÎÎÎ

hfe

ÎÎÎÎÎ

—

ÎÎÎÎ

—

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

(2) fT = hfe• ftest.

 

Motorola Bipolar Power Transistor Device Data

0.03 IC, COLLECTOR CURRENT (AMPS)

50.07 0.3 3

300

hFE, DC CURRENT GAIN

VCE = 2 VTJ = 150

100

0.1 0.7

–55

0.05 0.5 1

Figure 1. Power Derating

T, TEMPERATURE (

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

Figure 2. Switching Time Test Circuit

Figure 3. DC Current Gain

0.03 IC, COLLECTOR CURRENT (AMPS)

0.03 0.05 0.07 0.1 0.2 0.5 0.7 3

IB1 = IB2

IC/IB = 10

′

= ts – 1/8 tf

TJ = 25

t, TIME ( s)

0.3

0.7

0.5

0.3

′

0.2

0.1

0.07

0.05

1 2

Figure 4. Turn–On Time

IC, COLLECTOR CURRENT (AMPS)

0.02

IC/IB = 10

TJ = 25

t, TIME ( s)

0.7

0.5

0.3

0.1

0.07

0.05

0.03

0.003

Figure 5. “On” Voltages

IC, COLLECTOR CURRENT (AMPS)

0.8

V, VOLTAGE (VOLTS)

1.4

1.2

0.4

+11 V 25

–9 V

–4 V

SCOPE

VCC

+30 V

tr, tf

≤

10 ns

DUTY CYCLE = 1%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

REVERSE ALL POLARITIES FOR PNP.

500

0.03 0.07 0.3 30.1 0.7

0.05 0.5 1

tr @ VCC = 30 V

tr @ VCC = 10 V

td @ VBE(off) = 2 V

0.6

0.2

0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3

TJ = 25

VBE(sat) @ IC/IB = 10

VBE @ VCE = 2 V

VCE(sat) @ IC/IB = 10

tf @ VCC = 30 V

tf @ VCC = 10 V

2.5

1.5

0.5

TATC

Figure 6. Turn–Off Time

TA (SURFACE MOUNT)

TYPICAL CHARACTERISTICS

 

4 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5IB, BASE CURRENT (mA)

10 20

1.2

0.4

050 100 200 500

0.8

TJ = 25

1.6

IC = 0.3 A

1000

Figure 7. Collector Saturation Region

300

VR, REVERSE VOLTAGE (VOLTS)

CAPACITANCE (pF)

Ceb

0.1

200

100

0.5 1 10 40

TJ = +25

t, TIME (ms)

0.01 1 k

0.3

0.2

0.07

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

JC(t) = r(t) R

JC = 8.33

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

SINGLE PULSE

0.01

Figure 8. Capacitance

0.7 D = 0.5

Figure 9. Thermal Response

1 A 3 A

30 0.2 0.3 2 3 5 20 30

Ccb

0.5

0.1

0.05

0.03

0.02

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.2

0.1

0.05

0.01

IC, COLLECTOR CURRENT (AMPS)

1.5 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.01 3 150

0.3

0.2

0.05

0.03

WIRE BOND LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

5 7 20 7010

TC = 25

C SINGLE PULSE

TJ = 150

100

1 ms

0.02

0.1

0.5

Figure 10. Active Region Safe Operating Area

5030 100

CURVES APPLY BELOW RATED VCEO

500

MJD31, MJD32

MJD31C, MJD32C

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 10 is based on T J(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in Fig-

ure 9. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

 

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 369A–13

ISSUE W

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

123

–T–

SEATING

PLANE

GD3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.175 0.215 4.45 5.46

S0.050 0.090 1.27 2.28

V0.030 0.050 0.77 1.27

CASE 369–07

ISSUE K

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

2 PL

0.13 (0.005) T

–T–

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.180 BSC 4.58 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.102 0.114 2.60 2.89

L0.090 BSC 2.29 BSC

R0.175 0.215 4.45 5.46

S0.020 0.050 0.51 1.27

U0.020 ––– 0.51 –––

V0.030 0.050 0.77 1.27

Z0.138 ––– 3.51 –––

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

1 2 3

 

6 Motorola Bipolar Power Transistor Device Data

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MJD31/D

*MJD31/D*

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