1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIERS 3.0 AMP, 200 THRU 1000 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general purpose applications where high reliability is required. MARKING: FULL PART NUMBER GPR-4AM CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL 1N5550 1N5551 1N5552 1N5553 1N5554 UNITS Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V DC Blocking Voltage VR 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 140 280 420 560 700 V Average Forward Current (TA=55C) IO 3.0 A Peak Forward Surge Current, tp=8.3ms IFSM 100 A Operating and Storage Junction Temperature TJ, Tstg -65 to +200 C Thermal Resistance (Note 1) JL 30 C/W ELECTRICAL SYMBOL IR IR CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VR=Rated VRRM VR=Rated VRRM, TA=100C VF IF=3.0A (200V thru 600V) VF IF=3.0A (800V thru 1000V) BVR IR=50A (1N5550) 240 V BVR IR=50A (1N5551) 460 V BVR IR=50A (1N5552) 660 V BVR IR=50A (1N5553) 880 V BVR IR=50A (1N5554) 1100 trr IF=0.5A, IR=1.0A, IF=0.5A, IR=1.0A, trr MAX 1.0 UNITS A 75 A 1.0 V 1.1 V V Irr=0.25A (200V thru 600V) 2.0 s Irr=0.25A (800V thru 1000V) 4.0 s Notes: (1) At 0.375 inch (9.52mm) lead length from body. R2 (27-February 2013) 1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIERS 3.0 AMP, 200 THRU 1000 VOLT GPR-4AM CASE - MECHANICAL OUTLINE R2 (27-February 2013) w w w. c e n t r a l s e m i . c o m