LMZ22003TZENOPB - NATIONAL SEMICONDUCTOR

SD103AW, SD103BW, SD103CW

www.vishay.com Vishay Semiconductors

Rev. 1.7, 23-Feb-18 1Document Number: 85681

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Schottky Diodes

DESIGN SUPPORT TOOLS

MECHANICAL DATA

Case: SOD-123

Weight: approx. 10.3 mg

Cathode band color: black

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

FEATURES

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing, and coupling diodes for fast

switching and low logic level applications

• Other applications are click suppression,

efficient full wave bridges in telephone subsets,

and blocking diodes in rechargeable low voltage

battery systems

• The SD103 series is a metal-on-silicon Schottky barrier

device which is protected by a PN junction guardring

• For general purpose applications

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912



Note

(1) Valid provided that electrodes are kept at ambient temperature

Note

(1) Valid provided that electrodes are kept at ambient temperature

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Available

Models

PARTS TABLE

PART ORDERING CODE CIRCUIT CONFIGURATION TYPE

MARKING REMARKS

SD103AW SD103AW-E3-08 or SD103AW-E3-18 Single S6

Tape and reel

SD103AW-HE3-08 or SD103AW-HE3-18

SD103BW SD103BW-E3-08 or SD103BW-E3-18 Single S7

SD103BW-HE3-08 or SD103BW-HE3-18

SD103CW SD103CW-E3-08 or SD103CW-E3-18 Single S8

SD103CW-HE3-08 or SD103CW-HE3-18

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

Repetitive peak reverse voltage

SD103AW VRRM 40 V

SD103BW VRRM 30 V

SD103CW VRRM 20 V

Forward continuous current (1) IF350 mA

Power dissipation (infinite heat sink) (1) Ptot 400 mW

Single cycle surge 10 μs square wave IFSM 2A

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Thermal resistance junction to ambient air (1) RthJA 300 K/W

Junction temperature Tj125 °C

Operating temperature range Top -55 to +125 °C

Storage temperature range Tstg -55 to +150 °C

SD103AW, SD103BW, SD103CW

www.vishay.com Vishay Semiconductors

Rev. 1.7, 23-Feb-18 2Document Number: 85681

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage

Fig. 2 - Typical High Current Forward Conduction Curve

Fig. 3 - Typical Variation of Reverse Current at Various

Temperatures

Fig. 4 - Typical Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

Leakage current

VR = 30 V SD103AW IR5μA

VR = 20 V SD103BW IR5μA

VR = 10 V SD103CW IR5μA

Forward voltage drop IF = 20 mA VF370 mV

IF = 200 mA VF600 mV

Diode capacitance VR = 0 V, f = 1 MHz CD50 pF

Reverse recovery time IF = IR = 50 mA to 200 mA,

recover to 0.1 IRtrr 10 ns

18488

0.01

1000

100

0.1

0 0.4 0.6 0.8 1.00.2

I - Forward Current (mA)

VF- Forward Voltage (V)

18489

0.5 1.001.5

I - Forward Current (A)

VF- Forward Voltage (V)

duty cycle = 2 %

tp= 300 ms

0.01

0.1

100

1000

0 5 10 15 20 25 30 35 40 45 50

V - Reverse Voltage (V)

- Reverse Current (µA)

20084

75 °C

50 °C

25 °C

100 °C

amb

= 125 °C

18491

10 20 30 40 050

C- Diode Capacitance (pF)

R - Reverse Voltag e (V)

100

SD103AW, SD103BW, SD103CW

www.vishay.com Vishay Semiconductors

Rev. 1.7, 23-Feb-18 3Document Number: 85681

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Blocking Voltage Deration vs. Temperature at Various

Average Forward Currents

PACKAGE DIMENSIONS in millimeters (inches): SOD-123

Tamb - Ambient Temperature (°C)

18492

100 2000

VR- Reverse Voltage (V)

= 400 mAIF

100 mA

200 mA

0.1 (0.004) max.

2.85 (0.112)

2.55 (0.100)

3.85 (0.152)

3.55 (0.140)

1.7 (0.067)

1.40 (0.055)

Mounting Pad Layout

2.5 (0.098)

0.85 (0.033) 0.85 (0.033)

0.85 (0.033)

Cathode bar

0.65 (0.026)

0.45 (0.018)

0.10 (0.004)

1 (0.039)

0.15 (0.006)

1.35 (0.053)

0.2 (0.008)

0° to 8°

0.45 (0.018)

0.25 (0.010)

0.5 (0.020) ref.

Rev. 4 - Date: 24. Sep. 2009

Document no.: S8-V-3910.01-001 (4)

17432

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Revision: 08-Feb-17 1Document Number: 91000

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