2N6109, 6290
Complementary Power Transistors
Page 1 31/05/05 V1.0
Features:
•Collector-Emitter sustaining voltage-
VCEO(sus) = 50V (Minimum) - 2N6109, 2N6290.
•DC current gain specified to 7.0 Amperes
hFE = 2.3 (Minimum) at IC= 7.0A - 2N6109, 2N6290.
•Complementary Silicon Plastic Power Transistors.
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case).
PNP NPN
2N6109 2N6290
TO-220
7 Ampere
Complementary Silicon
Power Transistors
50 Volts
40 Watts
2N6109, 6290
Complementary Power Transistors
Page 2 31/05/05 V1.0
Thermal Characteristic
Maximum Ratings
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 3.125 °C/W
Parameter Symbol 2N6109
2N6290 Unit
Collector-Emitter Voltage VCEO 50
VCollector-Base Voltage VCBO 60
Emitter-Base Voltage VEBO 5.0
Collector Current-Continuous
-Peak IC7.0
10 A
Base Current IB3.0
Total Power Dissipation at TC= 25°C
Derate above 25°C PD40
0.32
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
Figure 1 - Power Derating
2N6109, 6290
Complementary Power Transistors
Page 3 31/05/05 V1.0
Parameter Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC= 100mA, IB= 0) VCEO(sus) 50 -V
Collector Cut off Current
(VCE = 40V, IB= 0) ICEO -1.0
mA
Collector Cut off Current
(VCE = 60V, VBE(off) = 1.5V)
(VCE = 50V, VBE(off) = 1.5V, TC= 125°C)
ICEX -0.1
2.0
Emitter Cut off Current
(VEB = 5.0V, IC= 0) IEBO -1.0
Electrical Characteristics (TC= 25°C unless otherwise noted)
DC Current Gain
(IC= 2.5A, VCE = 4.0V)
(IC= 7.0A, VCE = 4.0V)
hFE 30
2.3
150 -
Collector-Emitter Saturation Voltage
(IC= 7.0A, IB= 3.0A) VCE(sat) -3.5
V
Base-Emitter On Voltage
(IC= 7.0A, VCE = 4.0V) VBE(on) -3.0
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(IC= 0.5A, VCE = 4.0V, f = 1.0MHz) fT2.5
10
-MHz
Small Signal Current Gain
(IC= 0.5A, VCE = 4.0V, f = 50kHz) hfe 20 - -
On Characteristics (1)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
(2) fT= hfe •ftest.
2N6109, 6290
Complementary Power Transistors
Page 4 31/05/05 V1.0
There are two limitations on the power handling ability of a transistor:
average junction temperature and second breakdown safe operating area
curves indicate IC-VCE limits of the transistor that must be observed for
reliable operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure - 6 curve is based on TJ(PK) = 150°C; TCis variable
depending on the power level. Second breakdown pulse limits are valid for
duty cycles to 10% provided TJ(PK) ≤150°C. At high case temperatures,
thermal limitation will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
Figure 3 - Turn-Off TimeFigure 2 - Switching Time Test Circuit
Figure 4 - DC Current Gain Figure 5 - Turn-On Time
Figure - 6 Active Region Safe Operating Area
D1 must be fast recovery type, example:
MB05300 used above IB = 100mA
MSD6100 used below IB = 100mA
2N6109, 6290
Complementary Power Transistors
Page 5 31/05/05 V1.0
Figure 7 - Collector Saturation Region
Figure 9 - “ON” Voltage Figure 10 - Collector Cut-Off Region
Figure 8 - Capacitances
IC(av)
maximum
(A)
VCEO
maximum
(V)
hFE
minimum
at IC= 2.5A
Ptot
at 25°C
(W)
Type Part Number
7 50 30 40
PNP 2N6109
NPN 2N6290
Specifications
For enquiries from all other markets
2N6109, 6290
Complementary Power Transistors
Page 6 31/05/05 V1.0
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