© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 7
1Publication Order Number:
MBT3946DW1T1/D
MBT3946DW1T1G,
SMBT3946DW1T1G
Complementary General
Purpose Transistor
The MBT3946DW1T1G device is a spin-off of our popular
SOT−23/SOT−323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363−6
surface mount package. By putting two discrete devices in one
package, this device is ideal for low-power surface mount applications
where board space is at a premium.
Features
•hFE, 100−300
•Low VCE(sat), ≤0.4 V
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
Table 1. MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
(NPN)
(PNP)
VCEO 40
−40
Vdc
Collector −Base Voltage
(NPN)
(PNP)
VCBO 60
−40
Vdc
Emitter−Base Voltage
(NPN)
(PNP)
VEBO 6.0
−5.0
Vdc
Collector Current − Continuous
(NPN)
(PNP)
IC200
−200
mAdc
Electrostatic Discharge ESD HBM Class 2
MM Class B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Table 2. THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Package Dissipation (Note 1)
TA = 25°C
PD150 mW
Thermal Resistance,
Junction-to-Ambient
RqJA 833 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
SOT−363/SC−88
CASE 419B
STYLE 1
Q1
(1)(2)
(3)
(4) (5) (6)
Q2
MBT3946DW1T1*
*Q1 PNP
Q2 NPN
http://onsemi.com
46 M G
G
46 = Specific Device Code
M = Date Code
G= Pb-Free Package
MARKING DIAGRAM
Device Package Shipping†
ORDERING INFORMATION
SC−88
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3,000 /
Tape & Reel
3,000 /
Tape & Reel
SC−88
(Pb-Free)
MBT3946DW1T1G
MBT3946DW1T2G
(Note: Microdot may be in either location)
SC−88
(Pb-Free)
3,000 /
Tape & Reel
SMBT3946DW1T1G
MBT3946DW1T1G, SMBT3946DW1T1G
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2
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0) (NPN)
(IC = −1.0 mAdc, IB = 0) (PNP)
V(BR)CEO 40
−40
−
−
Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0) (NPN)
(IC = −10 mAdc, IE = 0) (PNP)
V(BR)CBO 60
−40
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) (NPN)
(IE = −10 mAdc, IC = 0) (PNP)
V(BR)EBO 6.0
−5.0
−
−
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN)
(VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP)
IBL
−
−
50
−50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN)
(VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP)
ICEX
−
−
50
−50
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc) (NPN)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = −0.1 mAdc, VCE = −1.0 Vdc) (PNP)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
hFE 40
70
100
60
30
60
80
100
60
30
−
−
300
−
−
−
−
300
−
−
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) (NPN)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc) (PNP)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
−
−
−
−
0.2
0.3
−0.25
−0.4
Vdc
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) (NPN)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc) (PNP)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat) 0.65
−
−0.65
−
0.85
0.95
−0.85
−0.95
Vdc
SMALL- SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (NPN)
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) (PNP)
fT300
250
−
−
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (NPN)
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) (PNP)
Cobo
−
−
4.0
4.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (NPN)
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) (PNP)
Cibo
−
−
8.0
10.0
pF
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP)
hie 1.0
2.0
10
12
kW
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP)
hre 0.5
0.1
8.0
10
X 10−4
Small−Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP)
hfe 100
100
400
400
−
MBT3946DW1T1G, SMBT3946DW1T1G
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Table 4. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Max Unit
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP)
hoe 1.0
3.0
40
60
mmhos
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz) (NPN)
(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 kW, f = 1.0 kHz) (PNP)
NF
−
−
5.0
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc) (NPN)
(VCC = −3.0 Vdc, VBE = 0.5 Vdc) (PNP)
td−
−
35
35
ns
Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (NPN)
(IC = −10 mAdc, IB1 = −1.0 mAdc) (PNP)
tr−
−
35
35
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (NPN)
(VCC = −3.0 Vdc, IC = −10 mAdc) (PNP)
ts−
−
200
225
ns
Fall Time (IB1 = IB2 = 1.0 mAdc) (NPN)
(IB1 = IB2 = −1.0 mAdc) (PNP)
tf−
−
50
75
2. Pulse Test: Pulse WidthĂ≤Ă300Ăms; Duty CycleĂ≤Ă2.0%.
(NPN)
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
+3 V
275
10 k
1N916 Cs < 4 pF*
+3 V
275
10 k
Cs < 4 pF*
< 1 ns
-0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
-9.1 V′
+10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
QT
QA
Cibo
Cobo
TJ = 25°C
TJ = 125°C
(NPN) (NPN)
MBT3946DW1T1G, SMBT3946DW1T1G
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(NPN)
Figure 5. Turn-On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
Figure 6. Rise Time
IC, COLLECTOR CURRENT (mA)
TIME (ns)
1.0 2.0 3.0 10 20 70
5100
t , RISE TIME (ns)
Figure 7. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
IC, COLLECTOR CURRENT (mA)
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
r
t , FALL TIME (ns)
f
t , STORAGE TIME (ns)
s
′
VCC = 40 V
IC/IB = 10
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
IC/IB = 10
IC/IB = 20
IC/IB = 10
IC/IB = 20
t′s = ts - 1/8 tf
IB1 = IB2
(NPN) (NPN)
(NPN) (NPN)
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
Figure 9. Noise Figure
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 10. Noise Figure
RS, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
SOURCE RESISTANCE = 500 W
IC = 100 mA
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
(NPN) (NPN)
MBT3946DW1T1G, SMBT3946DW1T1G
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(NPN)
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
Figure 11. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 12. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 13. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5 10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (x 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
2
1
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
fe
m
-4
(NPN) (NPN)
(NPN) (NPN)
Figure 15. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
1
1
10 100
10
100
1000
IC, COLLECTOR CURRENT (mA)
Single Pulse Test at TA = 25°C
(NPN)
1 s
1 ms
1 ms
10 ms
100 ms
MBT3946DW1T1G, SMBT3946DW1T1G
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(NPN)
TYPICAL STATIC CHARACTERISTICS
Figure 16. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 70
0.2 0.3
0.1 100
1.00.7 200
30205.0 7.0
FE
VCE = 1.0 V
TJ = +125°C
+25°C
-55°C
(NPN)
Figure 17. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
(NPN)
Figure 18. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 19. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0100
-0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100
COEFFICIENT (mV/ C)
200
-1.0
-1.5
-2.0
200
°
TJ = 25°C
VBE(sat) @ IC/IB =10
VCE(sat) @ IC/IB =10
VBE @ VCE =1.0 V
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
qVC FOR VCE(sat)
qVB FOR VBE(sat)
(NPN) (NPN)
MBT3946DW1T1G, SMBT3946DW1T1G
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(PNP)
Figure 20. Delay and Rise Time
Equivalent Test Circuit
Figure 21. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916 Cs < 4 pF*
3 V
275
10 k
Cs < 4 pF*
< 1 ns
+0.5 V
10.6 V 300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 22. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 23. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
QT
QA
Cibo
Cobo
TJ = 25°C
TJ = 125°C
(PNP) (PNP)
Figure 24. Turn-On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0 2.0 3.0 10 20 70
5100
Figure 25. Fall Time
IC, COLLECTOR CURRENT (mA)
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
t , FALL TIME (ns)
f
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
(PNP) (PNP)
MBT3946DW1T1G, SMBT3946DW1T1G
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(PNP)
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
Figure 26.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 27.
Rg, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0100
4
6
8
10
12
2
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
(PNP) (PNP)
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
Figure 28. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 29. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , DC CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 30. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 31. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5 10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
7
5
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
fe
m
70
30
0.7 7.0
0.7 7.0
7.0
3.0
0.7
0.3
0.7 7.0
0.7 7.0
h , VOLTAGE FEEDBACK RATIO (x 10 )
re -4
(PNP) (PNP)
(PNP) (PNP)
MBT3946DW1T1G, SMBT3946DW1T1G
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(PNP)
TYPICAL STATIC CHARACTERISTICS
Figure 32. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 70
0.2 0.3
0.1 100
1.00.7 200
30205.0 7.0
FE
VCE = 1.0 V
TJ = +125°C
+25°C
-55°C
(PNP)
Figure 33. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
(PNP)
Figure 34. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 35. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0100
-0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 200
-1.0
-1.5
-2.0
200
TJ = 25°C VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
qVC FOR VCE(sat)
qVB FOR VBE(sat)
, TEMPERATURE COEFFICIENTS (mV/ C)°
V
q
(PNP) (PNP)
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Figure 36. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
1
110 100
10
100
1000
IC, COLLECTOR CURRENT (mA)
Single Pulse Test at TA = 25°C
(PNP)
1 s
1 ms
100 ms 1 ms10 ms
MBT3946DW1T1G, SMBT3946DW1T1G
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PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
ǒmm
inchesǓ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
E0.2 (0.008) MM
123
D
e
A1
A
A3
C
L
654
−E−
b6 PL
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.95 1.10
A1 0.00 0.05 0.10
A3
b0.10 0.21 0.30
C0.10 0.14 0.25
D1.80 2.00 2.20
0.031 0.037 0.043
0.000 0.002 0.004
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.20 REF 0.008 REF
HE
HE
E1.15 1.25 1.35
e0.65 BSC
L0.10 0.20 0.30
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
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