alitron SDIM14C60AF Devices. Inc. _14.A 600 V3 Phase Inverter Six Pack FEATURES: PACKAGE: 7A @ 110C and 600 Volts *UFS Series IGBT - *High Speed t,, = 11.5 ns typical eLow Vecesat - 1.6 volts *Low Profile SIP Six Pack Isolated Heat Sink *Ultrafast Soft Recovery Diode DESCRIPTION: The SDIM14C60AF is a 14 A 600 V IGBT Power Module. The circuit includes a full 3 phase inverter for use in fractional HP Motor Drive Systems. Absolute Maximum Ratings Tc = 25C, Unless eae Symbglee, Units Collector Emitter Voltage .............cssssscsscsscsssceeeeseeeeesseneees BY; gh 2600 Vv Gate Emitter Voltage....s:nnmnnnnnnnnnnemennnnnnn igs 8 + 20 Vv Collector Current Sa . CONNUOUS 2.0... sees seseeeseesceneeseneeteeees Ic per 4 A | LMS .csccscsssccsssseeccaseccasecenscsccneeseseee Bi. , 56 A Collector Current @ 110C SR Continuous ; 7 A . LMS... .ecccsesesecssetseneseneeteeeeaeeeeeay A Diode Forward Current Continuous .............cceecceeeee gee OB J 7 A LMS woo cece eccecce en eeeeenee aes cscncecseuecsscneses Ie A Diode Forward Current @ 100C Continuous............. gis A A WwW -55 to 150 C 2500 VAC 1 Lis 8 Lsolitron SDIM14C60AF 14 A 600 V 3 Phase Inverter Six Pack Electrical Specifications Tc = 25C Unless otherwise specified Parameters Symbol Test Conditions _ Min. Typ. Max. Unit Collector Emitter Breakdown Voltage BVcas I =250pHA, Vop=0V 600 Vv Collector Emitter Leakage Current Icgs - Veg =BVcgs, Vop = 0 250 A Collector Emitter Saturation Voltage VcEsar Ic =7A, Vgp= 15 V 1.6 22 Vv Gate Emitter Threshold Voltage Vere) Ic =2501A, Veg = Vog 3.0 5.0 6.0 Vv Gate Emitter Leakage Current IGgs Vog =+ 20 V, Vop =0V +250 nA On State Gate Charge Qaion) Ic = 7A, Vog = 300 V, Veg =15 V 3 30 ac Input Capacitance Cres Vog = 20 V, Vop =0 V, f= 1 MHz 900 pF Output Capacitance Cogs Veg = 20 V, Vog =0 V, f= 1 MHz 70 pF Reverse Transfer Capacitance Cere Vog = 20 V, Vop= 0 V, f= 1 MHz ie = ES Transconductance Sts Veg =20V, [c=7 A 5 Diode Forward Voltage Drop Ve Ip=7A _ SWITCHING SPECIFICATIONS Current Turn On Delay twon) 2, | ns Current Rise Time ti Ic=7A tim ee 11.5 ns Tum On Time Ton Vog = 15 V ns Current Turn Off Delay Tume (OFM |Veg eg =480V 2 350 | 400 ns Current Fall Time ta Ty= 150C vee = 140 275 ns Tum Off Time Torr |Ro=502 a OF 500 | ns Turn Ono Energy Eon L=1mH 2a, P _ 165 uJ Tum Off Energy Eorr - 7 Bn 600 _ WJ Diode Reverse Recovery Time tr If=1A, di (Li yAate=7200 A/us 35 _ ns Diode Reverse Recovery Time br If = 7 Aydi(I/dg= 200 A/us 30 ns Thermal Resistance IGBT Resc poy TERT - 4.0 _ ocr Thermal Resistance Diode Rec % , - 3 _ 6.0 _ OCW Circuit Configuration (F) and Pin Out