Standard Power MOSFETs IRF530, IRF531, IRF532, IRF533 File Number 1575 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V fos(On) = 0.18 Q and 0.250 Features: @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics B High input impedance @ Majority carrier device The IRF530, IRF531, IRF532 and IRF533 are n-channel enhancement-mode silicon-gate power field- effect transistors designed for applications such as switch- N-CHANNEL ENHANCEMENT MODE s 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION ing regulators, switching converters, motor drivers, relay SOURCE drivers, and drivers for high-power bipolar switching tran- DRAIN |, sistors requiring high speed and low gate-drive power. (FLANGE) @ }h, - DRAIN These types can be operated directly from integrated __ circuits. _}-F a: . TOP VIEW GATE The IRF-types are supplied in the JEDEC TO-220AB plastic o2cs-39520 package. JEDEC TO-220AB Absolute Maximum Ratings Parameter IRF530 IRFS31 IRF532 IRF533 Units Vos Drain - Source Voltage 100 60 100 60 v VpGR Drain - Gate Voltage (Rag = 20KQ) 100 60 100 60 v Ip @Tco = 25C Continuous Drain Current 14 14 12 12 A ip @ Tc = 100C Continuous Drain Current 9.0 9.0 8.0 8.0 A tom Pulsed Drain Current @ 56 56 4a 48 A Vos Gate - Source Voltage +20 v Pp @Tc = 25C Max. Power Dissipation 75 (See Fig. 14} Ww Linear Oerating Factor 0.6 (See Fig. 14) wee lm Inductive Current, Clamped (See Fig. 15 and 16) = 100uH A 56 | 56 l 4a l 43 to Sernge Sopetonre Renge -8510 180 "c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) c 3-144Standard Power MOSFETs IRF530, IRF531, IRF532, IRF533 Electrical Characteristics @T = 25C (Unless Otherwise Specified) Parameter Type Min. | Typ. | Max. Units Test Conditions BVpss_ Drain - Source Breakdown Voltage IRF530 _ wnesg2 | 1 | ~ |W v Vas = OV (RF531 . IRF533 60 = - v Ip = 25024 VGsith) Gate Threshold Voltage ALL 2.0 [40 Vv Vos = Vas. Ip = 250A igss Gate-Source Leakage Forward ALL 7 = 500 nA Vos = 20V 'gss _ Gate-Source Leakage Reverse ALL - {-500 nk Vgg = -20V Ipss Zero Gate Voltage Drain Current ALL = | 250 pA Vps = Max. Rating, Veg = OV = [1000 [ 4A Vg = Max. Rating x 0.8, Vas = OV, Te = 125C Ipfen) On-State Drain Current @ IRF530 14 _ _ A TRFS32 Vos? 'Dion) * Fasion) max.: Vas = 10V 12 - - A IRF533. Rosion) Static Drain-Source On-State IRF530 _ Resistance IRF531 O14) O18) 2 Ving # 10V. Ip = B.0A WRFS32 | fo.20/ 025 | 2 sso IRF533 . . Os Forward Transconductance @ ALL 4.0 | 5.5 = St) Vos ? pion * RoSton) max.: 'p = 8-04 Ciss Input Capacitance ALL = 600 _ pF Vag = OV. Vpg = 25V, f = 1.0 MHz Coss Output Capacitance ALL _ 300 - pF See Fig. 10 Cogs Reverse Transfer Capacitance ALL = 100 = pF tgion)__Turn-On Delay Time ALL ~ = 30 ns Vpp = 36V. Ip = 8.04. Z, = 150 t Rise Time ALL = = 75 ns See Fig. 17 tgfoft} _Turn-Off Delay Time ALL ~ = 40 ns (MOSFET switching times are essentially % Fall Time ALL ~ _ 45 ns independent of operating temperature.) Qg Total Gate Charge , ALL _ 18 30 nc Vos = 10V, Ip = 18A, Vos 0.8 Max. Rating. {Gate-Source Plus Gate-Orain) See Fig. 18 for test circuit. (Gate charge is essentially Qgs Gate-Source Charge ALL - 9.0 14 nc independent of operating temperature.) Qog Gate-Drain (Miller) Charge ALL - 9.0 44 ac Lp Internal Drain Inductance ~ 3.5 - nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center af die. internal device ALL - 4.5 ~ nH Measured from the drain lead, 6mm (0.25 o in.) from package to center of die. to tg Internal Source Inductance ALL ~ 7.6 - nH Measured from the source lead, 6mm s ts {0.25 in.) from package to source Ss bonding pad. Thermal Resistance Rinic _ Junction-to-Case ALL = - 1.67 | C/W Rincs _ Case-to-Sink ALL. = 1.0 = C/W Mounting surface flat, smooth, and greased. Ringa Junction-to-Ambient ALL = = 80 ecw Free Air Operation Source-Drain Diode Ratings and Characteristics Ig Continuous Source Current IRFS30 _ _ 14 A Modified MOSFET symbol (Body Diode IRFS31 showing the integral D IRF532 reverse P-N junction rectifier. warsaa { ~ | ~ | 2 | 4 Ign Pulse Source Current IRF30 _ G (Body Diode) @ IRESSA {YA - rs s IRF532 inesa3 | - {1% a Vsp Diode Forward Voltage @ IAF530 L. _ _ IRFS31 - - | 28 v Tg = 28C. ts = 14, Vag = OV. IRF532 = = = IRFS33 - - | 23 v Te = 28C, Ig = 124. Vgg = OV try Reverse Recovery Time ALL = 360 - ns Ty = 150C, Ip = 14A, dip/dt = 100A/us Orr Reverse Recovered Charge ALL = 2.1 - ac Ty = 150C, Ip = 14A, dip/dt = 100A/ns ton Forward Turn-on Time ALL intrinsic turn-on time is negligible. Turn-on speed is substantially controlied by Lg + Lp. OTy = 25C to 180C. Putse Test: Pulse width < 300z8, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig, 5). 3-145Standard Power MOSFETs IRF530, IRF531, IRF532, IRF533 20 us PULSE us PULSE Vos > !p(on} Ip, DRAIN CURRENT (AMPERES) Ig, ORAIN CURRENT (AMPERES) 9 10 20 0 40 50 Q 2 4 6 8 10 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vgs. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig, 2 Typical Transfer Characteristics 80 us PULSE TEST ip, DRAIN CURRENT AMPERES} Ip, DRAIN CURRENT (AMPERES) Te = 25C Ty= 180C MAX. Rinuc = 1-67CW, PULSE 1.3 6 as ou 2 16 20 02 5 10 2 50 100 200 500 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS} Vps. DRAIN.TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area a SINGLE PULSE 1. ouTy FACTOR, O= <L THERMAL IMPEDANCE) DUTY FACTOR, D> 5 THERMAL IMPEDANCE (PER UNIT) 2. PER UNIT BASE * Aynsc * 1.67 DEG. CW. 3. Tym To * Pom Zinc). Zrnyc(t/Ainac. NORMALIZED EFFECTIVE TRANSIENT ws | 2 5 we 2 5 wi 2 we 2 5 wl 2 5 18 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal !mpedance, Junction-to-Case Vs. Pulse Duration 3-14691s, TRANSCONDUCTANCE (SHEMENS) Vos > 'p(on} * aston) 60 us PULSE TEST 0 5 10 15 20 ob tp. DRAIN CURRENT (AMPERES) Fig. 6 Typical Transconductance Vs. Drain Current 1.25 V5 098 BVoss, ORAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) on 40 0 40 30 120 160 Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature 2000 Vos + : ted boo Be 1600 Cig = Cog + Cog, Cy, SHORTED Crys = Ogg ron : gs Coq ! : Coes = Cdg + xe nw moO Geb Cg + Cyg 800 C. CAPACITANCE ipf) 400 a 10 20 30 a 50 Vos. ORAIN 10 SOUACE VOLTAGE (VOLTS) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Standard Power MOSFETs IRF530, IRF531, IRF532, IRF533 Ty = 100C jpn, REVERSE GRAIN CURRENT (AMPERES) Ty = 2600 0 1 2 3 4 Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage Royston}. ORAIN-TO-SQUACE ON RESISTANCE (NORMALIZED) -40 9 a 80 120 Ty, JUNCTION TEMPERATURE (C) Fig. 9 Normalized On-Resistance Vs. Temperature Vos > 20 Vos = SOV I Vos = 80V, 1RFS30, 532 Ip = FOR TEST CIRCUIT SEE FIGURE 18 Vag, GATE-TO-SOURCE VOLTAGE IVOLTS) Q 8 16 26 32 40 Gy. TOTAL GATE CHARGE (nC) Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 3-147Standard Power MOSFETs IRF530, IRF531, 1RF532, IRF533 as g 4) MEASURED WITH CURRENT PULSE OF 3 238 URATION. INITIAL Ty = 25C, (HEATING a (OS [- EFFECT OF 2.0 4s PULSE IS MINIMAL.) J 3 2 a Zoos : Vgs 7 lov = 5 gs * 19 & 1RFS30, rm 3 2 03 = 2 > 3 3 2 z z - << z= 02 S = 2 5 + _ Sa Vag = 20V 8 9 16 20 30 40 50 60 25 50 15 100 128 150 Ip. DRAIN CURRENT (AMPERES) Tg, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 -- Maximum Drain Current Vs. Case Temperature 80 Pp. POWER DISSIPATION (WATTS) 3 a 20 60 oO 100 120 140 Tc, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve VARY ty TO OBTAIN REQUIRED PEAK |, Ey - 0.5BVpss, 3 ve 0 5ev ves c ss 4 Ay * Fig. 15 Clamped Inductive Test Circuit Fig. 16 -- Clamped Inductive Waveforms o *Yos CURRENT (ISOLATED REGULATOR SUPPLY) Voo > 36V SAME TYPE ae AS DUT PRE Vine Vo BATTERY T o2we sone tp les TO SCOPE 7 r---+- = = = | 15 mA Fig. 17 Switching Time Test Circuit 0 -- O -Vos CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 3-148