UTC TIP110A PNP EXPI T AXI A L PL A N A R TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R203-004,A
LOW SATURATION VOLTAGE PNP
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC TIP110A is designed for using in general purpose
amplifier and switching applications.
FEATURE
*Low VCE(sat)
*High current gain
TO-220
1
1:BASE 2:COLLECTOR 3:EMITTER
MAXIMUM RATINGS(Ta=25°C)
CHARACTERISTICS SYMBOL VALUE UNITS
Collector Base Voltage VCBO 40 V
Collector to Emitter Voltage VCEO 30 V
Emitter To base Voltage VEBO 5 V
Collector Current IC 10 A
Junction Temperature Tj 150(Max)
°C
Storage Temperature Tstg -55 ~ +150 °C
Total Power Dissipations PD 65 W
CHARACTERISTICS(Ta=25°C)
SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
BVCEO IC=100mA 30 V
ICBO VCB=40V 1
µA
ICEO VCE=20V 1
µA
IEBO VEB=5V 100 nA
VCE(SAT) IC=10A,IB=10mA 2.0 V
VBE(ON) IC=5mA,VCE=2.0V 2.0 V
hFE1 IC=500mA,VCE=2.0V 2 60 K
hFE2 IC=10A,VCE=2.0V 1 20 60 K
UTC TIP110A PNP EXPI T AXI A L PL A N A R TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R203-004,A
TYPICAL PERFORMANCE CHARACTERISTICS
10
1
10
2
10
3
10
4
10
2
10
3
10
4
CURRENT GAIN VS.
COLLECTOR CURRENT
Collector Current(mA)
Current Gain(Hfe)
11010
-1
10
2
10
1
10
2
10
3
OUTPUT CAPACITANCE VS.
REVERSE-BIASED VOLTAGE
Output Capacitance(
pF
)
Reverse-Biased Voltage
10
1
10
2
10
4
10
4
10
3
ON VOLTAGE VS.
COLLECTOR CURRENT
Collector Current(mA)
On Voltage(mV)
10
4
10
3
10
2
10
1
10
2
10
3
10
4
SATURATIION VOLTAGE VS.
COLLECTOR CURRENT
Saturation Voltage(mV)
Collector Current(mA)
1
10
10
2
10
3
10
4
10
5
10
2
110
PT=1ms
PT=100ms
PT=1s
SAFE OPERATING AREA
Collector Current(m
A
)
Collector-Emitter Voltage ( V ) 10
4
10
3
10
3
10
2
10
1
SWITCHING TIMES VS.
COLLECTOR CURRENT
Switching Times(ns)
Collector Current(mA)
Tstg
10
3
