MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> POWEREX M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES Four package configurations (P, FP, GP and KP) Medium breakdown voltage (BVCEO 35V) Synchronizing current (IC(max) = 300mA) With clamping diodes Low output saturation voltage Wide operating temperature range (Ta = -40 to +85C) PIN CONFIGURATION INPUT IN1 1 16 O1 IN2 2 15 O2 INz3 3 14 O3 IN4 4 13 O4 IN5 5 12 O5 IN6 6 11 O6 IN7 7 10 O7 GND 8 9 Package type OUTPUT COM COMMOM 16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP) CIRCUIT DIAGRAM COM OUTPUT APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals INPUT 2.7k 10k GND The seven circuits share the COM and GND. FUNCTION The M63813P/FP/GP/KP each have seven circuits consisting of NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin9). The transistor emitters are all connected to the GND pin (pin 8). The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol Parameter Conditions VCEO Collector-emitter voltage Output, H IC VI Collector current Current per circuit output, L IF VR Input voltage Clamping diode forward current Clamping diode reverse voltage Pd Power dissipation Topr Tstg Operating temperature Storage temperature Ta = 25C, when mounted on board M63813P M63813FP M63813GP M63813KP Ratings Unit -0.5 ~ +35 300 V mA -0.5 ~ +35 300 V mA 35 1.47 V 1.00 0.80 W 0.78 -40 ~ +85 -55 ~ +125 C C Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> POWEREX M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol VO Parameter Limits Test conditions Output voltage Duty Cycle no more than 45% M63813P Collector current (Current per 1 cirIC Duty Cycle no more than 100% Duty Cycle no more than 30% M63813FP cuit when 7 circuits are coming on simultaneously) M63813GP M63813KP Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% VIN Input voltage min typ max 0 0 -- -- 35 250 0 0 0 0 -- -- -- -- 160 250 130 250 0 0 0 0 -- -- -- -- 120 250 120 20 Unit V mA V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE(sat) VIN(on) VF IR h FE Limits Test conditions ICEO = 10A IIN = 1mA, IC = 10mA Collector-emitter saturation voltage IIN = 2mA, IC = 150mA "On" input voltage IIN = 1mA, IC = 10mA min 35 -- -- 2.4 typ -- -- -- 35 max -- 0.2 0.8 4.2 Clamping diode forward volltage Clamping diode reverse current DC amplification factor -- -- 50 1.2 -- -- 2.0 10 -- IF = 250mA VR = 35V VCE = 10V, IC = 10mA Unit V V V V A -- SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol Parameter ton Turn-on time toff Turn-off time Limits Test conditions CL = 15pF (note 1) min typ max -- 125 -- -- 250 -- Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Vo 50% Measured device 50% INPUT RL OPEN OUTPUT PG OUTPUT 50 CL 50% ton 50% toff (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50, VIH = 3V (2)Input-output conditions : RL = 220, Vo = 35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> POWEREX M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Input Characteristics 2.0 8 1.5 M63813P 6 Ta = -40C Input current II (mA) Power dissipation Pd (W) Thermal Derating Factor Characteristics M63813FP 1.0 M63813GP 0.744 M63813KP 0.520 0.418 0.406 0.5 0 0 25 50 75 85 10 15 Duty Cycle-Collector Characteristics (M63813P) 20 400 1~4 5 6 7 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 300 1~2 3 4 200 100 0 100 0 5 6 7 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty Cycle-Collector Characteristics (M63813FP) Duty Cycle-Collector Characteristics (M63813FP) 100 400 1~3 300 4 5 6 7 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 0 20 40 60 Duty cycle (%) 80 100 Collector current Ic (mA) Collector current Ic (mA) 5 Duty Cycle-Collector Characteristics (M63813P) 400 0 0 Input voltage VI (V) 200 0 Ta = 85C 2 Ambient temperature Ta (C) 300 0 Ta = 25C 0 100 400 100 4 300 1 2 200 100 0 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 20 40 60 80 3 4 5 6 7 100 Duty cycle (%) Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> POWEREX M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M63813GP/KP) 400 300 1~2 3 4 5 6 7 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 0 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 400 Duty Cycle-Collector Characteristics (M63813GP/KP) IB = 3mA 60 100 80 Ta = 25C VI = 7V IB = 1.5mA IB = 1mA 50 0.2 0.4 0.6 Collector current Ic (mA) Collector current Ic (mA) 40 100 IB = 2mA 80 VI = 6V VI = 5V 60 VI = 4V VI = 3V 40 VI = 2V 20 0 0.8 0 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) Output saturation voltage VCE(sat) (V) Output Saturation Voltage Collector Current Characteristics DC Amplification Factor Collector Current Characteristics 103 100 Ta = -40C DC amplification factor hFE II = 2mA Collector current Ic (mA) 20 Output Saturation Voltage Collector Current Characteristics IB = 0.5mA Ta = 25C Ta = 85C 60 40 20 0 0 Output Saturation Voltage Collector Current Characteristics 100 0 3 4 56 7 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 100 Duty cycle (%) 150 80 2 200 Duty cycle (%) Ta = 25C 0 0 1 0 100 250 200 300 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) 7 5 VCE 10V Ta = 25C 3 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Collector current Ic (mA) Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> POWEREX M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Grounded Emitter Transfer Characteristics Grounded Emitter Transfer Characteristics 50 250 VCE = 4V 40 Ta = 25C 30 Ta = 85C Ta = -40C 20 10 0 0 0.4 0.8 1.2 1.6 2.0 Collector current Ic (mA) Collector current Ic (mA) VCE = 4V 200 Ta = 85C 150 Ta = 25C 100 Ta = -40C 50 0 0 1 2 3 4 5 Input voltage VI (V) Input voltage VI (V) Clamping Diode Characteristics Forward bisa current IF (mA) 250 200 150 Ta = 85C 100 Ta = 25C Ta = -40C 50 0 0 0.4 0.8 1.2 1.6 2.0 Forward bias voltage VF (V) Jan. 2000