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IRF9Z30PbF
03/27/07
The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high
transconductance and extreme device ruggedness.
The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation. They
retain all of the features of the more common N-Channel HEXFETs such as voltage control, very fast switching, ease of
paralleling, and excellent temperature stability.
P-Channel HEXFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers
circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity
connection. Applications include motor control, audio amplifiers, switched mode converters, control circuit and pulse
amplifiers.
HEXFET® POWER MOSFET
S
D
G
TO-220AB
P-Channel Verasatility
Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
Excellent Temperature Stability
Lead-Free
Product Summary
Part Number VDS(V) RDSON (Ω)I
D (A)
IRF9Z30PbF -50 0.14 -18
Description
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage -50
VDGR Drain-to-Gate Voltage (RGS =20KΩ) -50
VGS Gate-to-Source Voltage ±20
ID @ TC = 25°C Continuous Drain Current, VGS -18
ID @ TC = 100°C Continuous Drain Current, VGS -11
IDM Pulsed Drain Current -60
PD @TC = 25°C Max. Power Dissipation 74 W
Linear Derating Factor 0.59 W/°C
ILM Inductive Current, Clamped (L= 100µH) See Fig. 14 -60
ILUnclamped Inductive Current(Avalanche Current) See Fig. 15 -3.1
TJ Operating Junction and
TSTG Storage Temperature Range
Lead Temperature
V
A
-55 to + 150
A
°C
300 (0.063 in. (1.6mm) from case for 10s)
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.7
RθCS Case-to-Sink, Flat, Greased Surface 1.0 ––– °C/W
RθJA Junction-to-Ambient ––– 80
Features
PD- 96095
IRF9Z30PbF
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Note:
TJ = 25°C to 150°C
Repetitive Rating :Pulse width limited by max. junction tempeature. See Transient Thermal Impedance Curve (Fig.5).
@ Vdd = -25V, TJ= 25°C, L = 100µH, RG = 25Ω.
Pulse Test : Pulse width ≤ 300ms, Duty Cycle ≤ 2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage -50 ––– ––– V VGS = 0V, ID = -250µA
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V
IGSS Gate-to-Source Forward Leakage ––– ––– -500
Gate-to-Source Reverse Leakage ––– ––– 500
IDSS Drain-to-Source Leakage Current ––– ––– -250
––– ––– -1000
ID(on) On- State Drain Current -18 ––– ––– AVDS > ID(on) X RDS(ON) (max)., VGS = -10V
RDS(on) Static Drain-to-Source On-Resistance––– 0.093 0.14 ΩVGS = -10V, ID = -9.3A
gfs Forward Transconductance3.1 4.7 ––– S
Ciss Input Capacitance ––– 900 –––
Coss Output Capacitance ––– 570 ––– pF
Crss Reverse Transfer Capacitance ––– 140 –––
td(on) Turn-On Delay Time ––– 12 18
trRise Time ––– 110 170
td(off) Turn-Off Delay Time ––– 21 32 ns
tfFall Time ––– 64 96
QgTotal Gate Charge (Gate -Source Plus Gate-Drain) ––– 26 39
Qgs Post-Vth Gate-to-Source Charge ––– 6.9 10 nC
Qgd Gate-to-Drain Charge ––– 9.7 15
LDInternal Drain Inductance Measured from the drain Modified MOSFET symbol
lead, 6mm (0.25 in.) from showing
package to center of die. the internal
LSInternal Source Inductance Measured from the source device
lead, 6mm (0.25 in.) from inductances.
package to source bonding pad.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Volta
g
e ––– ––– -6.3 V
trr Reverse Recovery Time 54 120 250 ns
Qrr Reverse Recovery Charge 0.20 0.47 1.1 µC
Ton Forward Turn-on Time
––– ––– -18
––– ––– -60
VDD = -25V, ID = -18A, RG = 13Ω, RD = 1.3Ω
See Fig.16
(MOSFET switching times are assentially independent
of operating temperature)
See Fig.17 for test circuit (Gate charge is essentially
independent of operating temperature.)
VGS = -10V, ID = -18A, VDS = 0.8 Max. Rating
nA
VDS = Max. Rating, VGS = 0V
VDS = Max. Rating x 0.8, VGS = 0V, TJ = 125°C
µA
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig.10
VDS = 2 X VGS, IDS = -9.0A
di/dt = 100A/µs
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
–––
–––
4.5 –––
7.5 –––
nH
TJ = 25°C, IF = -18A
TJ = 25°C, IS = -18A, VGS = 0V
showing the
integral reverse
p-n junction rectifier.
MOSFET symbol
Conditions
A
Conditions
VDS = VGS, ID = -250µA
VGS = -20V
VGS = 20V
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/2007
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
LOT CODE 1789
EXAMPLE: THIS IS AN IRF1010
Note: "P" in assembly line position
indicates "Lead - Free"
IN THE ASSEMBLY LINE "C"
ASSEMBLED ON WW 19, 2000
INTERNATIONAL PART NUMBER
RECTIFIER
LOT CODE
ASSEMBLY
LOGO
YEAR 0 = 2000
DATE CODE
WEEK 19
LINE C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
