Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 8
1Publication Order Number:
BAV99LT1/D
BAV99LT1G,
SBAV99LT1G,
BAV99LT3G,
SBAV99LT3G
Dual Series
Switching Diode
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (Each Diode)
Rating Symbol Value Unit
Reverse Voltage VR70 Vdc
Forward Current IF215 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
Repetitive Peak Reverse Voltage VRRM 70 V
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
IF(AV) 715 mA
Repetitive Peak Forward Current IFRM 450 mA
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
IFSM
2.0
1.0
0.5
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1) TA = 25C
Derate above 25C
PD225
1.8
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 556 C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25C
Derate above 25C
PD300
2.4
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 417 C/W
Junction and Storage
Temperature Range
TJ, Tstg −65 to
+150
C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
CASE 318
SOT−23
STYLE 11
MARKING DIAGRAM
3
CATHODE/ANODE
ANODE
1
CATHODE
2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV99LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
BAV99LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
http://onsemi.com
1
A7 MG
G
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
A7 = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
SBAV99LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SBAV99LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G
http://onsemi.com
2
OFF CHARACTERISTICS (TA = 25C unless otherwise noted) (Each Diode)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage,
(I(BR) = 100 mA)
V(BR) 70 −
Vdc
Reverse Voltage Leakage Current,
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150C)
(VR = 70 Vdc, TJ = 150C)
IR
−
−
−
2.5
30
50
mAdc
Diode Capacitance,
(VR = 0, f = 1.0 MHz)
CD
−1.5
pF
Forward Voltage,
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
−
−
−
−
715
855
1000
1250
mVdc
Reverse Recovery Time,
(IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) RL = 100 W
trr
−6.0
ns
Forward Recovery Voltage,
(IF = 10 mA, tr = 20 ns)
VFR
−1.75
V
CURVES APPLICABLE TO EACH DIODE
VF
, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage Figure 2. Leakage Current
Figure 3. Capacitance
0.1
1
10
100
1000
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TA = 85C
TA = 55C
TA = 25C
TA = −40C
TA = −55C
TA = 150C
IF
, FORWARD CURRENT (mA)
TA = 125C
0.001
0.01
0.1
1.0
10
100
0 10203040506070
TA = 85C
TA = 55C
TA = 125C
TA = 150C
TA = 25C
IR, REVERSE CURRENT (mA)
0.45
0.47
0.49
0.51
0.53
0.55
0.57
0.59
0.61
012345678
VR, REVERSE VOLTAGE (V)
Cd, DIODE CAPACITANCE (pF)
0 1.1 1.2
BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G
http://onsemi.com
3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
BAV99LT1/D
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