Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 131
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 93A
IDM Pulsed Drain Current 680
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy590 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche EnergymJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
HEXFET® Power MOSFET
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide variety
of applications.
S
D
G
Absolute Maximum Ratings
VDSS = 55V
RDS(on) = 5.3mΩ
ID = 131A
Description
07/14/10
www.irf.com 1
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75 °C/W
RθJA Junction-to-Ambient (PCB mount)––– 40
D2Pak
IRF1405SPbF
TO-262
IRF1405LPbF
IRF1405SPbF
IRF1405LPbF
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
Benefits
PD-95331A
Typical Applications
l
Industrial Motor Drive
IRF1405S/LPbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 4.6 5.3 mΩVGS = 10V, ID = 101A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
gfs Forward Transconductance 69 ––– ––– S VDS = 25V, ID = 110A
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V
QgTotal Gate Charge ––– 170 260 ID = 101A
Qgs Gate-to-Source Charge ––– 44 66 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 62 93 VGS = 10V
td(on) Turn-On Delay Time ––– 13 ––– VDD = 38V
trRise Time ––– 190 ––– ID = 110A
td(off) Turn-Off Delay Time ––– 130 ––– RG = 1.1Ω
tfFall Time ––– 110 ––– VGS = 10V
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 5480 ––– VGS = 0V
Coss Output Capacitance ––– 1210 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 280 ––– ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 5210 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 900 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 1500 ––– VGS = 0V, VDS = 0V to 44V
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 101A, VGS = 0V
trr Reverse Recovery Time ––– 88 130 ns TJ = 25°C, IF = 101A
Qrr Reverse RecoveryCharge ––– 250 380 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
131
680
A
IRF1405S/LPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4 6 8 10 12
V = 25V
20µs PULSE W IDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
169A
IRF1405S/LPbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
060 120 180 240 300
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
101A
V = 27V
DS
V = 44V
DS
1
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
1
10
100
1000
10000
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss
= C
gs + C
gd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds
+ C
gd
IRF1405S/LPbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150 175
0
40
80
120
160
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF1405S/LPbF
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 14. Threshold Voltage Vs. Temperature
25 50 75 100 125 150 175
0
200
400
600
800
1000
1200
1400
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
41A
71A
101A
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
VGS(th) , Variace ( V )
ID = 250µA
IRF1405S/LPbF
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Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 101A
IRF1405S/LPbF
8www.irf.com
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 17. For N-channel HEXFET® power MOSFETs
IRF1405S/LPbF
www.irf.com 9
D2Pak (TO-263AB) Part Marking Information
DATE CODE
YEAR 0 = 2000
WE E K 02
A = AS S E MB L Y S I T E COD E
RECT IFIER
INT ERNAT IONAL PART NUMBER
P = DE S IGNAT ES L E AD - F R E E
PRODUCT (OPTIONAL)
F530S
IN THE ASSEMBLY LINE "L"
AS SEMBLED ON WW 02, 2000
THIS IS AN IRF 530S WITH
LOT CODE 8024 INT ERNATIONAL
LOGO
RECT IFIER
LOT CODE
ASSEMBLY YEAR 0 = 2000
PART NUMBER
DAT E CODE
LINE L
WEEK 02
OR
F530S
LOGO
AS S E MB L Y
LOT CODE
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF1405S/LPbF
10 www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
LOGO
RE CT IFIER
INTE RNAT IONAL
LOT CODE
AS S E MB L Y
LOGO
RECTIFIER
INT ERNAT IONAL
DAT E CODE
WEEK 19
YE AR 7 = 1997
PART NUMBER
A = ASSEMBLY SITE CODE
OR
PRODUCT (OPTIONAL)
P = DE S I GNAT E S L E AD- F R E E
EXAMPLE : T HIS IS AN IRL3103L
LOT CODE 1789
ASSEMBLY
PART NUMBE R
DAT E CODE
WEEK 19
LINE C
LOT CODE
YE AR 7 = 1997
ASS E MBLE D ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF1405S/LPbF
www.irf.com 11
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.11mH
RG = 25Ω, IAS = 101A. (See Figure 12).
ISD ≤ 101A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2010
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
