www.ti.com
FEATURES APPLICATIONS
SOT-23 OR SC-70 PACKAGE
(TOP VIEW)
1
2
3
6
5
4
NO
GND
NC COM
V+
IN
TS5A3157
DESCRIPTION/ORDERING INFORMATION
SUMMARY OF CHARACTERISTICS
TS5A315710- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
•Sample-and-Hold Circuits•Low ON-State Resistance (10 Ω)
•Battery-Powered Equipment•Control Inputs Are 5-V Tolerant
•Audio and Video Signal Routing•Low Charge Injection
•Communication Circuits•Excellent ON-State Resistance Matching•Low Total Harmonic Distortion (THD)•1.65-V to 5.5-V Single-Supply Operation•Latch-Up Performance Exceeds 100 mA PerJESD 78, Class II•ESD Performance Tested Per JESD 22– 2000-V Human-Body Model(A114-B, Class II)– 1000-V Charged-Device Model (C101)
The TS5A3157 is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to5.5 V. This device can handle both digital and analog signals, and signals up to V
+
can be transmitted in eitherdirection.
V
+
= 5 V and T
A
= 25 °C
Single PoleConfiguration Double Throw
(SPDT)Number of channels 1ON-state resistance (r
on
) 10 ΩON-state resistance match ( ∆r
on
) 0.15 ΩON-state resistance flatness (r
on(flat)
) 4 ΩTurn-on/turn-off time (t
ON
/t
OFF
) 5.7 ns/3.8 nsBreak-before-make time (t
BBM
) 0.5 nsCharge injection (Q
C
) 7 pCBandwidth (BW) 300 MHzOFF isolation (O
ISO
) –65 dB at 10 MHzCrosstalk (X
TALK
) –66 dB at 10 MHzTotal harmonic distortion (THD) 0.01%Leakage current (I
NO(OFF)
/I
NC(OFF)
)±0.1 µAPower-supply current (I
+
) 10 µA6-pin SOT-23, SC-70,Package options
DSBGA
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.NanoStar, NanoFree are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2005, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
www.ti.com
Absolute Minimum and Maximum Ratings
(1) (2)
TS5A3157
10- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
ORDERING INFORMATION
T
A
PACKAGE
(1)
ORDERABLE PART NUMBER TOP-SIDE MARKING
(2)
NanoStar™ – WCSP (DSBGA)
Tape and reel TS5A3157YEPR0.23-mm Large Bump – YEP
_ _ _JC_NanoFree™ – WCSP (DSBGA)0.23-mm Large Bump – YZP Tape and reel TS5A3157YZPR–40 °C to 85 °C
(Pb-free)
SOT (SOT-23) – DBV Tape and reel TS5A3157DBVR JC5_SOT (SC-70) – DCK Tape and reel TS5A3157DCKR JC_
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available atwww.ti.com/sc/package.
(2) DBV/DCK: The actual top-side marking has one additional character that designates the assembly/test site.YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one followingcharacter to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, ⋅= Pb-free).
FUNCTION TABLE
NC TO COM, NO TO COM,IN
COM TO NC COM TO NO
L ON OFFH OFF ON
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
+
Supply voltage range
(3)
–0.5 6.5 VV
NO
V
NC
Analog voltage range
(3) (4) (5)
–0.5 V
+
+ 0.5 VV
COM
I
K
Analog port diode current V
NC
, V
NO
, V
COM
< 0 or V
NO
, V
NC
, V
COM
> V
+
–50 50 mAI
NO
I
NC
On-state switch current V
NC
, V
NO
, V
COM
= 0 to V
+
–50 50 mAI
COM
V
I
Digital input voltage range
(3) (4)
–0.5 6.5 VI
IK
Digital input clamp current V
I
< 0 –50 mAI
+
Continuous current through V
+
–100 100 mAI
GND
Continuous current through GND –100 100 mADBV package 206θ
JA
Package thermal impedance
(6)
DCK package 252 °C/WYEP/YZP package 132T
stg
Storage temperature range –65 150 °C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods maydegrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyondthose specified is not implied.(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.(3) All voltages are with respect to ground, unless otherwise specified.(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.(5) This value is limited to 5.5 V maximum.(6) The package thermal impedance is calculated in accordance with JESD 51-7.
2
www.ti.com
Electrical Characteristics for 5-V Supply
(1)
TS5A315710- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
V
+
= 4.5 V to 5.5 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal V
COM
,
0 V
+
Vrange V
NO
, V
NC
25 °C 5.5 10ON-state 0 ≤(V
NO
or V
NC
)≤V
+
, Switch ON,r
on
4.5 V Ωresistance I
COM
= –30 mA, See Figure 13
Full 12ON-state 25 °C 0.15 0.2V
NO
or V
NC
= 3.15 V, Switch ON,resistance match ∆r
on
4.5 V ΩI
COM
= –30 mA, See Figure 13
Full 0.3between channelsON-state 25 °C 4 50≤(V
NO
or V
NC
)≤V
+
, Switch ON,resistance r
on(flat)
4.5 V ΩI
COM
= –30 mA, See Figure 13
Full 6flatness
V
NO
or V
NC
= 1 V, 25 °C –0.1 0.05 0.1NO, NC V
COM
= 4.5 V,I
NO(OFF)
, Switch OFF,OFF leakage or 5.5 V µAI
NC(OFF)
See Figure 14
Full –0.2 0.1 0.2current V
NO
or V
NC
= 4.5 V,V
COM
= 1 V,V
NO
= 1 V, 25 °C –0.1 0.05 0.1NO , NC V
COM
= Open,I
NO(ON)
, Switch ON,ON leakage or 5.5 V µAI
NC(ON)
See Figure 15
Full –0.2 0.1 0.2current V
NO
= 4.5 V,V
COM
= Open,V
COM
= 1 V, 25 °C –0.1 0.05 0.1COM V
NO
or V
NC
= Open,
Switch ON,ON leakage I
COM(ON)
or 5.5 V µASee Figure 15
Full –0.2 0.1 0.2current V
COM
= 4.5 V,V
NO
or V
NC
= Open,
Digital Control Input (IN)
Input logic high V
IH
Full V
+
×0.7 5.5 VInput logic low V
IL
Full 0 V
+
×0.3 V25 °C –0.1 0.05 0.1Input leakage
I
IH
, I
IL
V
I
= 5.5 V or 0 5.5 V µAcurrent
Full –1 1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
3
www.ti.com
Electrical Characteristics for 5-V Supply
(1)
(Continued)
TS5A3157
10- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
V
+
= 4.5 V to 5.5 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
25 °C 5 V 1 6 8.5V
COM
= 3 V, C
L
= 35 pF,Turn-on time t
ON
ns4.5 V toR
L
= 300 Ω, See Figure 17
Full 1 9.55.5 V25 °C 5 V 1 3.5 6.5V
COM
= 3 V, C
L
= 35 pF,Turn-off time t
OFF
ns4.5 V toR
L
= 300 Ω, See Figure 17
Full 1 7.55.5 V25 °C 5 V 1.8 2 3Break-before- V
NC
= V
NO
= V
+
/2, C
L
= 35 pF,t
BBM
ns4.5 V tomake time R
L
= 50 Ω, See Figure 18
Full 1.8 3.55.5 VV
GEN
= 0, C
L
= 0.1 nF,Charge injection Q
C
25 °C 5 V 7 pCR
GEN
= 0, See Figure 22NO, NC C
NO(OFF)
, V
NO
or V
Nc
= V
+
or GND,
See Figure 16 25 °C 5 V 5.5 pFOFF capacitance C
NC(OFF)
Switch OFF,NO, NC C
NO(ON)
, V
NO
or V
Nc
= V
+
or GND,
See Figure 16 25 °C 5 V 17.5 pFON capacitance C
NC(ON)
Switch OFF,COM V
COM
= V
+
or GND,C
COM(ON)
See Figure 16 25 °C 5 V 17.5 pFON capacitance Switch ON,Digital input
C
I
V
I
= V
+
or GND, See Figure 16 25 °C 5 V 2.8 pFcapacitance
R
L
= 50 Ω,Bandwidth BW See Figure 19 25 °C 5 V 300 MHzSwitch ON,R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 °C 5 V –65 dBf = 10 MHz, See Figure 20R
L
= 50 Ω, Switch OFF,Crosstalk X
TALK
25 °C 5 V –66 dBf = 10 MHz, See Figure 21Total harmonic R
L
= 600 Ω, f = 20 Hz to 20 kHz,THD 25 °C 5 V 0.01 %distortion C
L
= 50 pF, See Figure 23
Supply
25 °C 2.5 5Positive supply
I
+
V
I
= V
+
or GND, Switch ON or OFF 5.5 V µAcurrent
Full 10
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
4
www.ti.com
Electrical Characteristics for 3.3-V Supply
(1)
TS5A315710- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
V
+
= 3 V to 3.6 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal V
COM
,
0 V
+
Vrange V
NO
, V
NC
25 °C 12 20ON-state 0 ≤(V
NO
or V
NC
)≤V
+
, Switch ON,r
on
3 V Ωresistance I
COM
= –24 mA, See Figure 13
Full 20ON-state 25 °C 0.2 0.4V
NO
or V
NC
= 2.1 V, Switch ON,resistance match ∆r
on
3 V ΩI
COM
= –24 mA, See Figure 13
Full 0.3between channelsON-state 25 °C 9 110≤(V
NO
or V
NC
)≤V
+
, Switch ON,resistance r
on(flat)
3 V ΩI
COM
= –24 mA, See Figure 13
Full 12flatness
V
NO
or V
NC
= 1 V, 25 °C –0.1 0.05 0.1NO, NC V
COM
= 3 V,I
NO(OFF)
, Switch OFF,OFF leakage or 3.6 V µAI
NC(OFF)
See Figure 14
Full –0.2 0.1 0.2current V
NO
or V
NC
= 3 V,V
COM
= 1 V,V
NO
or V
NC
= 1 V, 25 °C –0.1 0.05 0.1NO, NC V
COM
= Open,I
NO(ON)
, Switch ON,ON leakage or 3.6 V µAI
NC(ON)
See Figure 15
Full –0.2 0.1 0.2current V
NO
or V
NC
= 3 V,V
COM
= Open,V
COM
= 1 V, 25 °C –0.1 0.05 0.1COM V
NO
or V
NC
= Open,
Switch ON,ON leakage I
COM(ON)
or 3.6 V µASee Figure 15
Full –0.2 0.1 0.2current V
COM
= 3 V,V
NO
or V
NC
= Open,
Digital Control Input (IN)
Input logic high V
IH
Full V
+
×0.7 5.5 VInput logic low V
IL
Full 0 V
+
×0.3 V25 °C –0.1 0.05 0.1Input leakage
I
IH
, I
IL
V
I
= 5.5 V or 0 3.6 V µAcurrent
Full –1 1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
5
www.ti.com
Electrical Characteristics for 3.3-V Supply
(1)
(Continued)
TS5A3157
10- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
V
+
= 3 V to 3.6 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
25 °C 3.3 V 3.5 7 9.5V
COM
= 2 V, C
L
= 35 pF,Turn-on time t
ON
ns3 V toR
L
= 300 Ω, See Figure 17
Full 1.5 10.53.6 V25 °C 3.3 V 1 3.5 6.5V
COM
= 2 V, C
L
= 35 pF,Turn-off time t
OFF
ns3 V toR
L
= 300 Ω, See Figure 17
Full 1 7.53.6 V25 °C 3.3 V 2.5 3 5Break-before- V
NC
= V
NO
= V
+
/2, C
L
= 35 pF,t
BBM
ns3 V tomake time R
L
= 50 Ω, See Figure 18
Full 2 53.6 VV
GEN
= 0, C
L
= 0.1 nF,Charge injection Q
C
25 °C 3.3 V 3 pCR
GEN
= 0, See Figure 22NO, NC C
NO(OFF)
, V
NO
or V
Nc
= V
+
or GND,
See Figure 16 25 °C 3.3 V 5.5 pFOFF capacitance C
NC(OFF)
Switch OFF,NO, NC C
NO(ON)
, V
NO
or V
Nc
= V
+
or GND,
See Figure 16 25 °C 3.3 V 17.5 pFON capacitance C
NC(ON)
Switch OFF,COM V
COM
= V
+
or GND,C
COM(ON)
See Figure 16 25 °C 3.3 V 17.5 pFON capacitance Switch ON,Digital input
C
I
V
I
= V
+
or GND, See Figure 16 25 °C 3.3 V 2.8 pFcapacitance
R
L
= 50 Ω,Bandwidth BW See Figure 19 25 °C 3.3 V 300 MHzSwitch ON,R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 °C 3.3 V –65 dBf = 10 MHz, See Figure 20R
L
= 50 Ω, Switch OFF,Crosstalk X
TALK
25 °C 3.3 V –66 dBf = 10 MHz, See Figure 21Total harmonic R
L
= 600 Ω, f = 20 Hz to 20 kHz,THD 25 °C 3.3 V 0.015 %distortion C
L
= 50 pF, See Figure 23
Supply
25 °C 2.5 5Positive supply
I
+
V
I
= V
+
or GND, Switch ON or OFF 3.3 V µAcurrent
Full 10
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
6
www.ti.com
Electrical Characteristics for 2.5-V Supply
(1)
TS5A315710- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
V
+
= 2.3 V to 2.7 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal V
COM
,
0 V
+
Vrange V
NO
, V
NC
25 °C 35 45ON-state 0 ≤(V
NO
or V
NC
)≤V
+
, Switch ON,r
on
2.3 V Ωresistance I
COM
= –8 mA, See Figure 13
Full 50ON-state 25 °C 0.3 0.5V
NO
or V
NC
= 1.6 V, Switch ON,resistance match ∆r
on
2.3 V ΩI
COM
= –8 mA, See Figure 13
Full 0.7between channelsON-state 25 °C 30 400≤(V
NO
or V
NC
)≤V
+
, Switch ON,resistance r
on(flat)
2.3 V ΩI
COM
= –8 mA, See Figure 13
Full 40flatness
V
NO
or V
NC
= 0.5 V, 25 °C –0.1 0.05 0.1NO, NC V
COM
= 2.2 V,I
NO(OFF)
, Switch OFF,OFF leakage or 2.7 V µAI
NC(OFF)
See Figure 14
Full –0.2 0.1 0.2current V
NO
or V
NC
= 2.2 V,V
COM
= 0.5 V,V
NO
or V
NC
= 0.5 V, 25 °C –0.1 0.05 0.1NO, NC V
COM
= Open,I
NO(ON)
, Switch ON,ON leakage or 2.7 V µAI
NC(ON)
See Figure 15
Full –0.2 0.1 0.2current V
NO
or V
NC
= 2.2 V,V
COM
= Open,V
COM
= 0.5 V, 25 °C –0.1 0.05 0.1COM V
NO
or V
NC
= Open,
Switch ON,ON leakage I
COM(ON)
or 2.7 V µASee Figure 15
Full –0.2 0.1 0.2current V
COM
= 2.2 V,V
NO
or V
NC
= Open,
Digital Control Input (IN)
Input logic high V
IH
Full V
+
×0.7 5.5 VInput logic low V
IL
Full 0 V
+
×0.3 V25 °C –0.1 0.05 0.1Input leakage
I
IH
, I
IL
V
I
= 5.5 V or 0 2.7 V µAcurrent
Full –1 1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
7
www.ti.com
Electrical Characteristics for 2.5-V Supply
(1)
(Continued)
TS5A3157
10- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
V
+
= 2.3 V to 2.7 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
25 °C 2.5 V 3.5 7 9.5V
COM
= 1.5 V, C
L
= 35 pF,Turn-on time t
ON
ns2.3 V toR
L
= 300 Ω, See Figure 17
Full 1.5 10.52.7 V25 °C 2.5 V 1 3.5 6.5V
COM
= 2 V, C
L
= 35 pF,Turn-off time t
OFF
ns3 V toR
L
= 300 Ω, See Figure 17
Full 1 7.53.6 V25 °C 2.5 V 3.5 5 7Break-before- V
NC
= V
NO
= V
+
/2, C
L
= 35 pF,t
BBM
ns3 V tomake time R
L
= 50 Ω, See Figure 18
Full 3 7.53.6 VV
GEN
= 0, C
L
= 0.1 nF,Charge injection Q
C
25 °C 2.5 V 2 pCR
GEN
= 0, See Figure 22NO, NC C
NO(OFF)
, V
NO
or V
Nc
= V
+
or GND,
See Figure 16 25 °C 2.5 V 5.5 pFOFF capacitance C
NC(OFF)
Switch OFF,NO, NC C
NO(ON)
, V
NO
or V
Nc
= V
+
or GND,
See Figure 16 25 °C 2.5 V 17.5 pFON capacitance C
NC(ON)
Switch OFF,COM V
COM
= V
+
or GND,C
COM(ON)
See Figure 16 25 °C 2.5 V 17.5 pFON capacitance Switch ON,Digital input
C
I
V
I
= V
+
or GND, See Figure 16 25 °C 2.5 V 2.8 pFcapacitance
R
L
= 50 Ω,Bandwidth BW See Figure 19 25 °C 2.5 V 300 MHzSwitch ON,R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 °C 2.5 V –65 dBf = 10 MHz, See Figure 20R
L
= 50 Ω, Switch OFF,Crosstalk X
TALK
25 °C 2.5 V –66 dBf = 10 MHz, See Figure 21Total harmonic R
L
= 600 Ω, f = 20 Hz to 20 kHz,THD 25 °C 2.5 V 0.025 %distortion C
L
= 50 pF, See Figure 23
Supply
25 °C 2.5 5Positive supply
I
+
V
I
= V
+
or GND, Switch ON or OFF 2.7 V µAcurrent
Full 10
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
8
www.ti.com
Electrical Characteristics for 1.8-V Supply
(1)
TS5A315710- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
V
+
= 1.65 V to 1.95 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal V
COM
,
0 V
+
Vrange V
NO
, V
NC
25 °C 140 160ON-state 0 ≤(V
NO
or V
NC
)≤V
+
, Switch ON,r
on
1.65 V Ωresistance I
COM
= –4 mA, See Figure 13
Full 160ON-state 25 °C 0.5 0.6V
NO
or V
NC
= 1.6 V, Switch ON,resistance match ∆r
on
1.65 V ΩI
COM
= –4 mA, See Figure 13
Full 0.7.5between channelsON-state 25 °C 125 1300≤(V
NO
or V
NC
)≤V
+
, Switch ON,resistance r
on(flat)
1.65 V ΩI
COM
= –4 mA, See Figure 13
Full 140flatness
V
NO
or V
NC
= 0.3 V, 25 °C –0.1 0.05 0.1NO, NC V
COM
= 1.65 V,I
NO(OFF)
, Switch OFF,OFF-leakage or 1.95 V µAI
NC(OFF)
See Figure 14
Full –0.2 0.1 0.2current V
NO
or V
NC
= 1.65 V,V
COM
= 0.3 V,V
NO
or V
NC
= 0.3 V, 25 °C –0.1 0.05 0.1NO, NC V
COM
= Open,I
NO(ON)
, Switch ON,ON leakage or 1.95 V µAI
NC(ON)
See Figure 15
Full –0.2 0.1 0.2current V
NO
or V
NC
= 1.65 V,V
COM
= Open,V
COM
= 0.3 V, 25 °C –0.1 0.05 0.1COM V
NO
or V
NC
= Open,
Switch ON,ON leakage I
COM(ON)
or 1.95 V µASee Figure 15
Full –0.2 0.1 0.2current V
COM
= 1.65 V,V
NO
or V
NC
= Open,
Digital Control Input (IN)
Input logic high V
IH
Full V
+
×0.65 5.5 VInput logic low V
IL
Full 0 V
+
×0.3.5 V25 °C –0.1 0.05 0.1Input leakage
I
IH
, I
IL
V
I
= 5.5 V or 0 1.95 V µAcurrent
Full –1 1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
9
www.ti.com
Electrical Characteristics for 1.8-V Supply
(1)
(Continued)
TS5A3157
10- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
V
+
= 1.65 V to 1.95 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
25 °C 1.8 V 5 15 23V
COM
= 1.3 V, C
L
= 35 pF,Turn-on time t
ON
ns1.65 V toR
L
= 300 Ω, See Figure 17
Full 7 241.95 V25 °C 1.8 V 1 3.5 6.5V
COM
= 1.3 V, C
L
= 35 pF,Turn-off time t
OFF
ns1.65 V toR
L
= 300 Ω, See Figure 17
Full 1 7.51.95 V25 °C 1.8 V 5.5 7.5 9Break-before- V
NC
= V
NO
= V
+
/2, C
L
= 35 pF,t
BBM
ns1.65 V tomake time R
L
= 50 Ω, See Figure 18
Full 5.2 121.95 VV
GEN
= 0, C
L
= 0.1 nF,Charge injection Q
C
25 °C 1.8 V 1 pCR
GEN
= 0, See Figure 22NO, NC C
NO(OFF)
, V
NO
or V
Nc
= V
+
or GND,
See Figure 16 25 °C 1.8 V 5.5 pFOFF capacitance C
NC(OFF)
Switch OFF,NO, NC C
NO(ON)
, V
NO
or V
Nc
= V
+
or GND,
See Figure 16 25 °C 1.8 V 17.5 pFON capacitance C
NC(ON)
Switch OFF,COM V
COM
= V
+
or GND,C
COM(ON)
See Figure 16 25 °C 1.8 V 17.5 pFON capacitance Switch ON,Digital input
C
I
V
I
= V
+
or GND, See Figure 16 25 °C 1.8 V 2.8 pFcapacitance
R
L
= 50 Ω,Bandwidth BW See Figure 19 25 °C 1.8 V 300 MHzSwitch ON,R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 °C 1.8 V –65 dBf = 10 MHz, See Figure 20R
L
= 50 Ω, Switch OFF,Crosstalk X
TALK
25 °C 1.8 V –66 dBf = 10 MHz, See Figure 21Total harmonic R
L
= 600 Ω, f = 20 Hz to 20 kHz,THD 25 °C 1.8 V 0.015 %distortion C
L
= 50 pF, See Figure 23
Supply
25 °C 2.5 5Positive supply
I
+
V
I
= V
+
or GND, Switch ON or OFF 1.95 V µAcurrent
Full 10
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
10
www.ti.com
TYPICAL PERFORMANCE
0
20
40
60
80
100
120
140
012345
V+ = 5 V
VCOM (V)
ron Ω
V+ = 3.3 V
V+ = 2.5 V
V+ = 1.8 V
0
2
4
6
8
10
12
14
16
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
VCOM (V)
ron (
25C
–40C
85C
0
2
4
6
8
10
012345
VCOM (V)
ron ()
85C
25C
–40C
TS5A315710- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
Figure 1. r
on
vs V
COM
Figure 2. r
on
vs V
COM
(V
+
= 3 V)
Figure 3. r
on
vs V
COM
(V
+
= 4.5 V)
11
www.ti.com
TYPICAL PERFORMANCE
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
TA (°C)
Leakage Current (nA)
−40°C 25°C 85°C
ICOM(ON)
INO(ON)
INC(OFF)
INO(OFF)
INO(ON)
0
1
2
3
4
5
6
7
8
0123456
Bias Voltage (V)
Charge Injection (pC)
V+ = 5 V
V+ = 3 V
TS5A3157
10- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
Figure 4. Leakage Current vs Temperature (V
+
= 5.5 V)
Figure 5. Charge Injection (Q
C
) vs V
COM
Figure 6. t
ON
and t
OFF
vs Supply Voltage
12
www.ti.com
TYPICAL PERFORMANCE
0
1
2
3
4
5
6
7
−40°C 25°C 85°C
I+ (µA)
TA (C)
tON
tOFF
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1.0 1.8 2.6 3.4 4.2 5.0 5.8
I+ (µA)
TA (C)
VIL
VIH
Gain (dB)
Frequency (MHz)
0.1 1 100010 100
−5.0
−4.5
−4.0
−3.5
−3.0
−2.5
−2.0
−1.5
−1.0
−0.5
0.0
TS5A315710- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
Figure 7. t
ON
and t
OFF
vs Temperature (V
+
= 5 V)
Figure 8. Logic-Level Threshold vs V
+
Figure 9. Bandwidth (Gain vs Frequency) (V
+
= 5 V)
13
www.ti.com
TYPICAL PERFORMANCE
−120
−100
−80
−60
−40
−20
0
Frequency (MHz)
0.1 1 100010 100
Crosstalk
OFF Isolation
Gain (dB)
Frequency (kH)
0.5
0.45
0.4
0.3
035
0.25
0.2
0.15
0.10
0
0.05
0 5 10 15 20 25
THD + Noise (%)
0
1
2
3
4
5
6
7
8
9
10
−40°C 25°C 85°C
I+ (µA)
TA (C)
TS5A3157
10- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
Figure 10. OFF Isolation (V
+
= 5 V)
Figure 11. Total Harmonic Distortion vs Frequency
Figure 12. Power-Supply Current vs Temperature(V
+
= 5 V)
14
www.ti.com
TS5A315710- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
PIN DESCRIPTION
PIN NUMBER NAME DESCRIPTION
1 NO Normally-open terminal2 GND Digital ground3 NC Normally-closed terminal4 COM Common terminal5 V
+
Power supply6 IN Digital control pin to connect the COM terminal to the NO or NC terminal
15
www.ti.com
TS5A3157
10- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
PARAMETER DESCRIPTION
SYMBOL DESCRIPTION
V
COM
Voltage at COMV
NC
Voltage at NCV
NO
Voltage at NOr
on
Resistance between COM and NC or COM and NO ports when the channel is ON∆r
on
Difference of r
on
between channels in a specific devicer
on(flat)
Difference between the maximum and minimum value of r
on
in a channel over the specified range of conditionsI
NC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF stateI
NO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF stateLeakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the outputI
NC(ON)
(COM) openLeakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the outputI
NO(ON)
(COM) openLeakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON stateI
COM(ON)
and the output (NC or NO) openV
IH
Minimum input voltage for logic high for the control input (IN)V
IL
Maximum input voltage for logic low for the control input (IN)V
I
Voltage at the control input (IN)I
IH
, I
IL
Leakage current measured at the control input (IN)Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagationt
ON
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagationt
OFF
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.Break-before-make time. This parameter is measured under the specified range of conditions and by the propagationt
BBM
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)Q
C
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the controlinput.Charge injection, Q
C
= C
L
× ∆ V
COM
, C
L
is the load capacitance and ∆V
COM
is the change in analog output voltage.C
NC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFFC
NO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFFC
NC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ONC
NO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ONC
COM(ON)
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ONC
I
Capacitance of control input (IN)OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specificO
ISO
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.BW Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higherTHD
harmonics to the magnitude of fundamental harmonic.I
+
Static power-supply current with the control (IN) pin at V
+
or GND
16
www.ti.com
PARAMETER MEASUREMENT INFORMATION
V+
ICOM
ron VCOM VNO or VNC
ICOM
GND
Channel ON
NC
VI
NO
COM VCOM
VI = VIH or VIL
VNO
VNC
+
+
IN
Channel OFF
OFF-State Leakage Current
VI = VIH or VIL
V+
GND
NC
VI
NO
COM VCOM
VNO
VNC
+
+
+
IN
Channel ON
ON-State Leakage Current
VI = VIH or VIL
V+
GND
NC
VI
NO
COM VCOM
VNO
VNC
+
+
IN
TS5A315710- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
Figure 13. ON-State Resistance (r
on
)
Figure 14. OFF-State Leakage Current (I
NC(OFF)
, I
NO(OFF)
)
Figure 15. ON-State Leakage Current (I
COM(ON)
, I
NC(ON)
, I
NO(ON)
)
17
www.ti.com
V+
GND
VBIAS VI
VI = VIH or VIL
VBIAS = V+ or GND
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
Capacitance
Meter
VCOM
VNO
VNC
COM
NO
NC
IN
CL(2) RL
VCOM
V+
GND
NC or NO VNC or VNO
VI
NC or NO
COM
Logic
Input(1)
300 Ω
RLCL
35 pFtON
TEST
300 Ω35 pFtOFF
50%
tON tOFF
50%
90% 90%
Logic
Input
(VI)
V+
Switch
Output
(VNC or VNO)
0
CL(2) RL
IN
(3)
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
(3) See Electrical Characteristic for VCOM.
TS5A3157
10- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
Figure 16. Capacitance (C
I
, C
COM(ON)
, C
NC(OFF)
, C
NO(OFF)
, C
NC(ON)
, C
NO(ON)
)
Figure 17. Turn-On (t
ON
) and Turn-Off Time (t
OFF
)
18
www.ti.com
V+
GND
NC or NO
IN
VNC or VNO
VI
NC or NO COM VCOM
CL(2) RL
tBBM
50%
90% 90%
VNC or VNO = V+/2
RL = 50 Ω
CL = 35 pF
Logic
Input(1)
Logic
Input
(VI)
Switch
Output
(VCOM)
V+
0
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
V+
GND
NC
VI
NO
COM
50
50
VNC
VCOM
Channel ON: NC to COM
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50- load)
DC Bias = 350 mV
Network Analyzer
Source
Signal
+
VI = V+ or GND
IN
TS5A315710- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
Figure 18. Break-Before-Make Time (t
BBM
)
Figure 19. Bandwidth (BW)
19
www.ti.com
NC
NO
COM
VNC
VCOM
Channel OFF: NC to COM
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50- load)
DC Bias = 350 mV
50
V+
GND
50
50
Network Analyzer
Source
Signal
VI
+
VI = V+ or GND
IN
NC
NO
50
50
VNC VCOM
Channel ON: NC to COM
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50- load)
DC Bias = 350 mV
50
V+
GND
VNO
Source
Signal
Channel OFF: NO to COM
Network Analyzer
VI
+
VI = V+ or GND
IN
TS5A3157
10- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
Figure 20. OFF Isolation (O
ISO
)
Figure 21. Crosstalk (X
TALK
)
20
www.ti.com
V+
GND
NC or NO
RGEN
VI
NC or NO
COM VCOM
CL(2)
OFF
VCOM
ON OFF
∆VCOM
VGEN +
VI = VIH or VIL
CL = 0.1 nF
VGEN = 0 to V+
RGEN = 0
QC = CL × ∆VCOM
Logic
Input(1)
VIH
VIL
Logic
Input
(VI)
IN
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
V+
GND
NC
NO
COM
10 F
CL(1)
RL
V+/2
10 F
VI+
600 600
600
Audio Analyzer
Source
Signal
RL = 600 Ω
CL = 50 pF
VSOURCE = V+ P-P fSOURCE = 20 Hz to 20 kHz
Channel ON: COM to NC VI = VIH or VIL
IN
(1) CL includes probe and jig capacitance.
TS5A315710- ΩSPDT ANALOG SWITCH
SCDS199 – JUNE 2005
Figure 22. Charge Injection (Q
C
)
Figure 23. Total Harmonic Distortion (THD)
21
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
TS5A3157DBVR ACTIVE SOT-23 DBV 6 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS5A3157DBVRE4 ACTIVE SOT-23 DBV 6 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS5A3157DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS5A3157DCKRE4 ACTIVE SC70 DCK 6 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS5A3157YZPR ACTIVE WCSP YZP 6 3000 Pb-Free
(RoHS) SNAGCU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 12-Sep-2005
Addendum-Page 1
MECHANICAL DATA
MPDS114 – FEBRUARY 2002
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
DCK (R-PDSO-G6) PLASTIC SMALL-OUTLINE PACKAGE
0,15
Gage Plane
0,10
M
0,10
0,65
0°–8°0,46
0,26
0,13 NOM
4093553-3/D 01/02
0,15
0,30
1,40
1,10 2,40
1,80
46
2,15
1,85
1 3
1,10
0,80 0,10
0,00
Seating Plane
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion.
D. Falls within JEDEC MO-203
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,
enhancements, improvements, and other changes to its products and services at any time and to discontinue
any product or service without notice. Customers should obtain the latest relevant information before placing
orders and should verify that such information is current and complete. All products are sold subject to TI’ s terms
and conditions of sale supplied at the time of order acknowledgment.
TI warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI
deems necessary to support this warranty. Except where mandated by government requirements, testing of all
parameters of each product is not necessarily performed.
TI assumes no liability for applications assistance or customer product design. Customers are responsible for
their products and applications using TI components. To minimize the risks associated with customer products
and applications, customers should provide adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right,
copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process
in which TI products or services are used. Information published by TI regarding third-party products or services
does not constitute a license from TI to use such products or services or a warranty or endorsement thereof.
Use of such information may require a license from a third party under the patents or other intellectual property
of the third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of information in TI data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction
of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for
such altered documentation.
Resale of T I products or services with statements different from or beyond the parameters stated by TI for that
product or service voids all express and any implied warranties for the associated TI product or service and
is an unfair and deceptive business practice. TI is not responsible or liable for any such statements.
Following are URLs where you can obtain information on other Texas Instruments products and application
solutions:
Products Applications
Amplifiers amplifier.ti.com Audio www.ti.com/audio
Data Converters dataconverter.ti.com Automotive www.ti.com/automotive
DSP dsp.ti.com Broadband www.ti.com/broadband
Interface interface.ti.com Digital Control www.ti.com/digitalcontrol
Logic logic.ti.com Military www.ti.com/military
Power Mgmt power.ti.com Optical Networking www.ti.com/opticalnetwork
Microcontrollers microcontroller.ti.com Security www.ti.com/security
Telephony www.ti.com/telephony
Video & Imaging www.ti.com/video
Wireless www.ti.com/wireless
Mailing Address: Texas Instruments
Post Office Box 655303 Dallas, Texas 75265
Copyright 2005, Texas Instruments Incorporated