©2001 Fairch ild Semicond uctor C orpo ration HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGTG12N60A4D, HGTP12N60A4D,
HGT1S12N60A4DS
600V, SM PS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching
devic es combining the bes t features of MO SFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies onl y moderately betw een 25oC and 1 50oC. The
IGBT used is the devel opment type TA49335 . The diod e
used in anti-parallel is the development typ e TA4937 1.
This IG BT is idea l for many high volt age switc hing
applic ations op erating at h igh frequenc ies w here low
conduction los s es are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49337.
Symbol
Features
• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
•Temperature Compensating SABER™ Model
www.fairchildsermi.com
• Related Literature
- TB334 “Guideli nes for Soldering Surface Moun t
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
JEDEC TO-263AB
JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG12N60A4D TO-247 12N60A4D
HGTP12N60A4D TO-220AB 12N60A4D
HGT1S12N60A4DS TO-263AB 12N60A4D
NO TE: When ordering, use the entire part number . Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.
C
E
G
GCE
COLLECTOR
(FLANGE)
G COLLECTOR
(FLANGE)
E
COLLECTOR
(FLANGE)
C
E
G
Fairchild CORPORATION IGBT PR ODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PAT ENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet December 2001
©2001 Fairch ild Semicond uctor C orpo ration HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 54 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 23 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 96 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitte r Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V
Po wer Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD167 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260
oC
oC
CAUTION: Str esses above those li sted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess onl y rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications TJ = 25oC , Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltag e BVCES IC = 250µA, VGE = 0V 600 - - V
Collector to Emitter Leakage Current ICES VCE = 600V TJ = 25oC - - 250 µA
TJ = 125oC--2.0mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 12A,
VGE = 15V TJ = 25oC-2.02.7V
TJ = 125oC-1.62.0V
Gate to Emitter Threshold V oltage VGE(TH) IC = 250µA, VCE = 600V - 5.6 - V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V,
L = 100µH, VCE = 600V 60 - - A
Gate to Emitter Plateau Voltage VGEP IC = 12A, VCE = 300V - 8 - V
On-State Gate Charge Qg(ON) IC = 12A,
VCE = 300V VGE = 15V - 78 96 nC
VGE = 20V - 97 120 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC,
ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10Ω,
L = 500µH,
Test Circuit (Figure 24)
-17- ns
Current Rise Time trI -8-ns
Current Turn-Off Delay Time td(OFF)I -96- ns
Current Fall Time tfI -18- ns
Turn-On Energy (Note 3) EON1 -55- µJ
Turn-On Energy (Note 3) EON2 - 160 - µJ
Turn-Off Energy (Note 2 ) EOFF -50- µJ
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 125oC,
ICE = 12A,
VCE = 390V, VGE = 15V,
RG = 10Ω,
L = 500µH,
Test Circuit (Figure 24)
-17- ns
Current Rise Time trI -16- ns
Current Turn-Off Delay Time td(OFF)I - 110 170 ns
Current Fall Time tfI -7095ns
Turn-On Energy (Note3) EON1 -55- µJ
Turn-On Energy (Note 3) EON2 - 250 350 µJ
Turn-Off Energy (Note 2 ) EOFF - 175 285 µJ
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
©2001 Fairch ild Semicond uctor C orpo ration HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
Diode Forward Voltage VEC IEC = 12A - 2.2 - V
Diode Reverse Recovery T ime trr IEC = 12A, dIEC/dt = 200A/µs-30-ns
IEC = 1A, dIEC/dt = 200A/µs-18-ns
Thermal Resistance Junction To Case RθJC IGBT - - 0.75 oC/W
Diode - - 2.0 oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Devi ce Turn-Off Switchi ng Loss. This test m ethod produces the true total Turn-Off Energy Loss.
3. Values for t wo Turn-On loss condi tions are sh own for the co nvenience of the circuit d esigner. EON1 is the turn-on loss of the IGBT only. EON2
is the t urn-on loss w hen a typical diode i s used in the test circuit and t he diode is at the same TJ as the IGBT. The diode type is spe c if ied in
Figu re 24 .
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECT OR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR T O
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications TJ = 25oC , Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
10
0
40
20
30
25 75 100 125 150
60
50
VGE = 15V,
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
40
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
20
300 400200100 500 600
0
50
60
30
70 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 200µH
TCVGE
15V
75oC
fMAX, OPERATING FREQUENCY (kHz)
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
10 3
300
3
0
10 20
500
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.75oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTO R = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TJ = 125oC, RG = 10Ω, L = 500µH, VCE = 390V
100
VGE, GATE T O EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
9 101112 15
0
2
10
16
50
125
175
300
tSC
ISC
20
250
13 14
4
6
8
12
14
18
75
100
150
200
225
275
VCE = 390V, RG = 10Ω, TJ = 125oC
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
©2001 Fairch ild Semicond uctor C orpo ration HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
FIGURE 5. COLLECTOR TO EMITTER ON-STATE V OLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STAT E VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECT OR TO
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECT OR T O
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECT OR T O
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECT OR T O
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
00.51.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR T O EMITTER CURRENT (A)
0
4
8
1.5 2 2.5
16
20
12
TJ = 125oC
TJ = 150oC
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 12V
24
TJ = 25oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
TJ = 150oC
TJ = 25oC
TJ = 125oC
00.51.01.522.5
4
8
16
12
20
24
0
EON2, TURN-ON ENERGY LOSS (µJ)
500
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
400
200
600
0
700
64101214168 18202224
TJ = 125oC, VGE = 12V, VGE = 15V
RG = 10Ω, L = 500µH, VCE = 390V
TJ = 25oC, VGE = 12V, VGE = 15V
100
2
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (µJ)
0
50
200
100
250
350
400
TJ = 25oC, VGE = 12V OR 15V
TJ = 125oC, VGE = 12V OR 15V
150
642101214168 18202224
RG = 10Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(ON)I, TURN-ON DELAY TIME (ns)
10
11
12
13
14
15
642 10121416818202224
16
17
18
TJ = 25oC, TJ = 125oC, VGE = 15V
TJ = 25oC, TJ = 125oC, V GE = 12V
RG = 10Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI,RISE TIME(ns)
0
4
16
12
8
64210121416818202224
20
32
28
24
RG = 10Ω, L = 500µH, VCE = 390V
TJ = 125oC OR TJ = 25oC, VGE = 12V
TJ = 25oC OR TJ = 125oC, VGE = 15V
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
©2001 Fairch ild Semicond uctor C orpo ration HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR T O
EMITTER CURRENT FIGURE 12. F ALL TIME vs COLL ECT OR T O EMITT ER
CURRENT
FIGURE 13. TRANSFER CHARACTERIST IC FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. T O TAL SWITCHING LOSS vs CASE
TEMPERATURE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves Unless Otherwise Specified (Continued)
482
95
6
85
90
ICE, COL LECTOR TO EMITT ER CURRENT (A)
td(OFF)I, TURN-OF F DELAY TIME (ns)
12
115
1614
105
110
10
100
VGE = 12V, VGE = 15V, TJ = 25oC
VGE = 12V, VGE = 15V, TJ = 125oC
RG = 10Ω, L = 500µH, VCE = 390V
18 20 22 24
ICE, COL LECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
10
30
20
50
70
40
60
RG = 10Ω, L = 500µH, VCE = 390V
TJ = 25oC, VGE = 12V OR 15V
TJ = 125oC, VGE = 12V OR 15V
482 6 12 161410 18 20 22 24
80
90
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
50
100
1378910 12
VGE, G ATE TO EMITTER VOLTAGE (V)
11
150
200
14 15
250
6
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 10V
16
TJ = 125oC
TJ = -55oC
TJ = 25oC
VGE, GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
2
14
002010 30
4
10
40
IG(REF) = 1mA, RL = 25Ω, TC = 25oC
VCE = 200V
VCE = 400V
50 60 70 80
6
8
12
16
VCE = 600V
ICE = 24A
ICE = 12A
ICE = 6A
0
0.2
0.4
50 75 100
TC, CASE TEMPERATURE (oC)
0.6
1.0
12525 150
1.2
0.8
ETOTAL, TOTAL SWITCHING
RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ENERGY LOSS (mJ)
0.1 10 100
RG, GATE RESISTANCE (Ω)
1
51000
ICE = 12A
ICE = 24A
ICE = 6A
10 TJ = 125oC, L = 500µH,
ETOTAL = EON2 + EOFF
ETOTAL, TOTAL SWITCHING
ENERGY LOSS (mJ)
VCE = 390V, VGE = 15V
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
©2001 Fairch ild Semicond uctor C orpo ration HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
FIGURE 17. CAPACITANCE vs COLL ECT OR T O EMITTER
VOLTAGE FIGURE 18. COLLECT OR T O EMITTER ON-STA TE V OLT AGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FOR WARD CURRENT vs FOR WARD
VOLTAGE DROP FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
FIGURE 21. RECO VER Y TIMES vs RATE OF CHANGE OF
CURRENT FIGURE 22. ST ORED CHARGE vs RATE OF CHANGE OF
CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
CRES
0 5 10 15 20 2
5
0
0.5
1.0
2.0
2.5
3.0
1.5
FREQUENCY = 1MHz
COES
CIES
VGE, GATE TO EMITTER VOLTAGE (V)
89
1.9 10 12
2.0
2.2
2.1
11 13 14 15 16
2.3
2.4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE = 18A
ICE = 12A
ICE = 6A
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, TJ = 25oC
0.5 1.0 1.5 2.5
IEC, FORWARD CURRENT (A)
VEC, FORWARD VOLTAGE (V)
02.0
0
4
6
8
10
25oC125oC
2
14
12 PULSE DURATION = 250µs
DUTY CYCLE < 0.5%,
60
40
20
0
trr, RECOVERY TIMES (ns)
IEC, FORWARD CURRENT (A)
112118
70
50
30
10
234567 910
80
90
25oC trr
25oC ta
25oC tb
125oC tb
125oC ta
dIEC/dt = 200A/µs
125oC trr
300 400 500 700 800
trr, RECOVERY TIMES (ns)
diEC/dt, RAT E OF CHANGE OF CURRENT (A/µs)
200 600
10
5
25
35
45
55
15
20
30
40
50
60
65
900 1000
125oC ta
125oC tb
25oC ta
25oC tb
IEC = 12A, VCE = 390V
300
200
100
0
Qrr, REVERSE RECOVERY CHARGE (nc)
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
1000500
350
250
150
50
200 300 400 900
400
600 700 800
125oC IEC = 12A
125oC IEC = 6A
25oC IEC = 6A
25oC IEC = 12A
VCE = 390V
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
©2001 Fairch ild Semicond uctor C orpo ration HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves Unless Otherwise Specified (Continued)
t1, RECTANGULAR PULSE DURATION (s)
ZθJC, NORMALIZED THERMAL RESPONSE
10-2
10-1
100
10-5 10-3 10-2 10-1 100101
10-4
t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
0.10
Test Circuit and Wavef o rms
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS
RG = 10Ω
L = 500µH
VDD = 390V
+
-
HGTP12N60A4D
DUT
DIODE TA49371
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
©2001 Fairch ild Semicond uctor C orpo ration HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate- ins ul atio n dam age by the electro st atic d isc harge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static c harge
built in the handler ’s body capacitance is no t disc harged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production b y nume rous equipment m anuf acturers in
military, indus t rial and con su mer appli cations , with vi rtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assem b ly int o a circui t, all l eads s hould be k ept
shorted together either by the use of metal shorting
springs or by the insertion into co nductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When de vice s are remov ed by hand from thei r carriers,
the hand being u sed shoul d be grou nded b y any suitab le
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. De vices sho uld n e v er b e ins erted into or remo v e d from
circuits with power on.
5. Gate Voltage Rating - Ne v er e xceed the gate- vol tage
rat ing of VGEM. Exceeding the rated VGE can result in
permanent damage to the ox id e layer in the ga te region.
6. Gate Termination - The gate s of these de vice s are
essentially capacitors. Circuits that leave the gate open-
circuit ed or fl oating shoul d be a v oide d. Thes e condi tions
can resu lt in turn-on of the device du e to v olt age buil dup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - The se de vices do no t hav e an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Op erating frequency in formatio n for a typic al device
(Figure 3) is pre sen ted as a guide for estimati ng device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are poss ible using
the inf o rmation s hown f o r a typical un it in Figure s 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defin ed by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadti me (the de nominato r) has bee n arbit rarily held to 10%
of the on -sta te tim e for a 50% duty facto r. Other defini tions
are possible. td(OFF)I and td(ON)I are defined in Figure 25.
Devi ce turn-off delay can esta blish an a d dit ional fr eque n cy
limitin g con diti on for an applic ation other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). T he
allowab le dissipation (PD) is defined by PD=(T
JM -T
C)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction lo sses (PC) are approximated by
PC=(V
CE xI
CE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 25. EON2 is the integral of the
instantaneous po wer loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE xV
CE) during turn-off. All tail los se s are in cl ude d in the
calculation for EOFF; i.e., th e collector current equals zero
(ICE = 0).
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
